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Saccharides-assisted boron nitride stripping method and application

A boron nitride and sugar technology, applied in chemical instruments and methods, nitrogen compounds, inorganic chemistry, etc., can solve the problems of cumbersome and complicated steps, unfavorable for large-scale production, and limit the wide application of BNNSs, so as to solve the wave absorbing performance. and heat storage and transfer, improve poor thermal conductivity, and improve corrosion resistance

Active Publication Date: 2021-08-17
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Use physical action to apply mechanical force to h-BN to peel off layers of h-BN. This preparation method is cumbersome and complicated, which is not conducive to large-scale production.
The above several stripping methods all limit the wide application of BNNSs to varying degrees.

Method used

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  • Saccharides-assisted boron nitride stripping method and application
  • Saccharides-assisted boron nitride stripping method and application
  • Saccharides-assisted boron nitride stripping method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] (1) 0.8g chitosan is dissolved in 200mL acetic acid (2wt.%) aqueous solution, obtains the carbohydrate solution of 0.4%;

[0037] (2) Then disperse 1.0g h-BN into the solution of (1), and stir rapidly for 30 minutes to ensure that the h-BN is uniformly dispersed, and the concentration of the h-BN suspension is 5mg / mL;

[0038] (3) Shearing is performed with a high-shear dispersing emulsifier, the shearing speed is set at 8000 rpm, and the shearing time is 90 minutes. In order to avoid the temperature rise of the system due to shearing and affect the peeling effect, the suspension was placed in a cold water bath, and the temperature was kept at 25-35°C to obtain the BNNSs suspension;

[0039] (4) The BNNSs suspension was centrifuged at a centrifugal speed of 4000rpm for 30min. The supernatant obtained was stripped BN, and the lower layer was bulk BN. The supernatant was dried, and the lower layer could be left for further stripping.

Embodiment 2

[0041] (1) Fully dissolve 1.0 g of glucose into 200 mL of deionized water to obtain a 0.5% sugar solution;

[0042] (2) Then disperse 2.0g h-BN into the solution of (1), ultrasonicate at room temperature for 30min, and stir for 6h to ensure that h-BN is uniformly dispersed, and the concentration of h-BN suspension is 10mg / mL;

[0043] (3) Shearing is performed with a high-shear dispersing emulsifier, the shearing speed is set at 6500 rpm, and the shearing time is 60 minutes. In order to avoid the temperature rise of the system due to shearing and affect the peeling effect, the suspension was placed in a cold water bath, and the temperature was kept at 25-35°C to obtain the BNNSs suspension;

[0044] (4) The BNNSs suspension obtained after shear dispersion was added to the water-based polyurethane, and the BNNSs was mixed with the water-based polyurethane with a solid content of 30%, ultrasonicated for 10 min by an ultrasonic instrument, and then stirred by magnetic force for 1...

Embodiment 3

[0048] (1) Fully dissolve 2.0 g of sucrose with molecular weight in 200 mL of water to obtain a 1.0% sugar solution;

[0049] (2) Then disperse 4.0g c-BN into the solution of (1), ultrasonicate at room temperature for 30min, and stir for 12h to ensure that c-BN is evenly dispersed, and the concentration of BN suspension is 20mg / mL;

[0050] (3) Shearing is performed with a high-shear dispersing emulsifier, the shearing speed is set at 8000 rpm, and the shearing time is 90 minutes. In order to avoid the peeling effect being affected by the temperature rise of the system due to shearing, the suspension was placed in a cold water bath, and the temperature was kept at 25-35°C to obtain the suspension;

[0051] (4) The suspension was filtered with slow qualitative filter paper, and washed with deionized water, and the washing process was repeated 3 times. The collected solids were redispersed in deionized water and sonicated for several minutes. Then centrifuged at 3000g for 40mi...

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Abstract

The invention belongs to the technical field of fine chemical products, and particularly discloses a saccharides-assisted boron nitride stripping method and application. According to the invention, saccharides are taken as a stabilizer, and BN is stripped in one step by adopting a mechanical stripping method, so that the BN is effectively reduced from micron level to nano level, and the dispersing capacity of BNNSs in a base material is improved, thereby providing a method for widely applying BN in industry. The composite coating prepared by blending the BNNSs prepared by the invention into a heat-conducting matrix can effectively improve the heat-conducting property, and can be effectively applied to an environment needing rapid heat dissipation.

Description

technical field [0001] The invention belongs to the technical field of fine chemical products, and in particular relates to a sugar-assisted stripping boron nitride method and its application Background technique [0002] Boron nitride (BN) is generally divided into four crystal forms, cubic boron nitride (c-BN) similar to diamond, wurtzite boron nitride (w-BN) similar to Lonsdaleite, and two sp2 hybridized layered configuration of hexagonal boron nitride (h-BN) and rhombohedral boron nitride (r-BN). Boron nitride nanosheets (BNNSs) have the characteristics of high mechanical strength, corrosion resistance, thermal stability and good thermal conductivity. BNNSs were obtained by exfoliating BN. Common methods for preparing BNNSs include chemical exfoliation, synthesis, and mechanical exfoliation. Chemical exfoliation methods mainly include liquid phase ultrasonic exfoliation method, chemical functional exfoliation method and ion intercalation exfoliation method. Although ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B21/064B82Y40/00C09D7/61
CPCC01B21/0648B82Y40/00C09D7/61C01P2004/20C01P2004/03C01P2006/40
Inventor 胡剑峰杜国浩瞿金清
Owner SOUTH CHINA UNIV OF TECH
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