Method for constructing multi-field coupling artificial synapse through manganese oxide electromagnetic regulation and control

A manganese oxide, electromagnetic technology, applied in the manufacture/processing of electromagnetic devices, electrical components, material selection, etc., can solve the problems of limiting the plasticity of simulated synaptic functions, unfavorable continuous regulation of resistance, etc., to achieve the effect of expanding application prospects

Active Publication Date: 2021-07-30
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] As we all know, the traditional heterojunction with electroresistance effect can generally only switch two resistance states (high resistance state and low resistance state), which is not conducive to the continuous regulation of resistance and limits the plasticity of simulated synaptic functions.

Method used

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  • Method for constructing multi-field coupling artificial synapse through manganese oxide electromagnetic regulation and control
  • Method for constructing multi-field coupling artificial synapse through manganese oxide electromagnetic regulation and control
  • Method for constructing multi-field coupling artificial synapse through manganese oxide electromagnetic regulation and control

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] A component that mimics synapse function, its structure is metal / perovskite manganese oxide / (Pt / Ti) / (SiO 2 / Si), the preparation method comprises the following steps:

[0052] (1)CeO 2 Target preparation: weighing CeO 2 powder, and then tableted according to the desired target size; the flake CeO 2 Put it into a cleaned crucible and place it in a muffle furnace, and calcinate at 1200°C for 30h to obtain the desired CeO 2 Ceramic target.

[0053] (2)La 2 / 3 Ba 1 / 3 MnO 3 Target preparation:

[0054] Pretreatment: Weigh La 2 o 3 Powder, BaCO 3 powder, MnO 2 Powder, on La 2 o 3 The powder was pre-fired in a low-temperature furnace at 900°C for 8 hours to dry it.

[0055] Solid state sintering: according to stoichiometric ratio La 2 o 3 Powder, BaCO 3 powder, MnO 2 Put the powder in an agate mortar and grind it well to mix it evenly. Then put the evenly ground powder into a cleaned crucible and place it in a high temperature furnace for annealing. After th...

Embodiment 2

[0059] A component that simulates synapse function, its structure is LSMO / CeO 2 / (Pt / Ti) / (SiO 2 / Si), the preparation method comprises the following steps:

[0060] (1)CeO 2 Ceramic target preparation: weighing CeO 2 powder, and then tableted according to the desired target size; the flake CeO 2 Put it into a cleaned crucible and sinter in a muffle furnace; calcinate at 1200°C for 30h to obtain the required CeO 2 Ceramic target.

[0061] (2) La 0.7 Sr 0.3 MnO 3 Ceramic target preparation:

[0062] Pretreatment: Weigh La 2 o 3 powder, SrCO 3 powder, MnO 2 Powder, on La 2 o 3 The powder was pre-fired in a low-temperature furnace at 900°C for 8 hours for drying.

[0063] Solid phase sintering: After weighing the raw materials according to the required stoichiometric ratio, grind them thoroughly to make them evenly mixed. Then put the above powder into a cleaned crucible and place it in a muffle furnace for sintering. In order to obtain a high-density ceramic targ...

Embodiment 3

[0071] The difference between embodiment 3 and embodiment 1 is that the number of layers of components is different, CeO 2 Thin films and LBMO (La 2 / 3 Ba 1 / 3 MnO 3 ) film preparation is different, the rest of the process is exactly the same.

[0072] Deposited on (Pt / Ti) / (SiO2) by pulsed laser 2 / Si) substrates sequentially prepared large-area CeO 2 , LSMO film and metal electrode Au. A KrF laser with a wavelength of 248nm was used as a light source for deposition, the laser frequency for growing thin films was 3Hz, and the laser energy was 450mJ. During the growth process, O was introduced into the vacuum chamber 2 As the working gas, the prepared oxygen pressure is 35Pa. CeO 2 The deposition temperature of the LSMO and LSMO films is 650°C, the deposition time is 40 and 10 minutes, respectively, and then annealed in situ for 30 minutes. After the annealing is completed, a metal gold film is deposited on it, the deposition temperature is room temperature, and the dep...

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Abstract

The invention discloses a method for constructing a multi-field coupling artificial synapse through manganese oxide electromagnetic regulation and control, which comprises the following steps of: (1) depositing metal, a resistive layer and perovskite manganese oxide on a substrate in sequence to form a component for simulating a synapse function; (2) taking the metal as a bottom electrode, taking a cylindrical array grown by the perovskite manganese oxide as a top electrode, or taking a layer of metal grown on the perovskite manganese oxide film as the top electrode; and (3) applying an external field to the component, and regulating and controlling migration and distribution of oxygen ions of the perovskite manganese oxide film. According to the method, a memristive heterojunction with excellent electromagnetic characteristics is utilized, external field regulation and control are carried out on a resistive unit array on the basis of an electro-resistance effect to obtain multiple resistance states induced by multiple fields, and migration of oxygen ions in resistive units is regulated and controlled through the external field to simulate the strength distribution and plasticity of a synapse and to construct an artificial synapse.

Description

technical field [0001] The invention relates to the field of magnetic oxide materials, in particular to a method for manganese oxide electromagnetic regulation and construction of multi-field coupling artificial synapses. Background technique [0002] The following background art is provided to help the reader understand the present invention and is not to be admitted as prior art. [0003] With the vigorous development of artificial intelligence equipment, people have an urgent need for human brain simulation technology. Algorithms built into artificial neural networks can be trained to mimic the brain in recognizing speech and images. Brain-like neuromorphic computing has the advantages of high energy efficiency, parallelism, fault tolerance, and autonomous cognition, and is regarded as the most promising disruptive technology to break through the "von Neumann bottleneck". Constructing the self-learning function of artificial synapses is a key foundation for the developm...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/08H01L43/10H01L43/12H01L45/00
CPCH10N50/10H10N50/01H10N50/85H10N70/8833H10N70/011
Inventor 温嘉红杨博楚赵晓宇周铁军
Owner HANGZHOU DIANZI UNIV
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