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High-temperature-resistant electrode with doped oxide metal gradient layer and preparation method of high-temperature-resistant electrode

A technology of oxide and gradient layer, which is applied in metal material coating process, superimposed layer plating, piezoelectric/electrostrictive device manufacturing/assembly, etc., can solve the problem that the degradation temperature cannot reach 1000°C, and achieve Improve degradation, improve high-temperature conductivity, and have remarkable effects in high-temperature resistance

Active Publication Date: 2021-07-27
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the degradation temperature of these materials cannot reach 1000 °C

Method used

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  • High-temperature-resistant electrode with doped oxide metal gradient layer and preparation method of high-temperature-resistant electrode
  • High-temperature-resistant electrode with doped oxide metal gradient layer and preparation method of high-temperature-resistant electrode
  • High-temperature-resistant electrode with doped oxide metal gradient layer and preparation method of high-temperature-resistant electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Step 1, the substrate is sequentially washed with acetone, alcohol and deionized water, and remove organic pollutants on the surface, and then blow dry with nitrogen.

[0047] Step 2, the substrate after steps will be placed in an atomic layer deposition system (the model is ALD150LX of the US Kurtj.lesker), and the vacuum, deposited 20 nm high temperature oxide layer.

[0048] Step three, apply a photoresist (Model AR-P5350) on the high temperature oxide layer, complete the hierarchy and bake with the uniformity-hot plate all-in-one (model of the American CEE's Apo II). The photolithography (model is MA6 / BA6 of Germany Karlsuss), forms a mask, placed in a mixture of developers (Model AR300-26) and water in a mixture of 1: 7 ratio, last used Ion washing washed with a development to obtain a doped oxide metal gradient layer pattern.

[0049] Step 4, the sample after step three-shot is placed on the substrate table of the magnetron sputtering system (model of DISCOVERY635, ...

Embodiment 2

[0054] Based on the first embodiment, in step four, the metal target is a PT target, and the oxide target is Al. 2 O 3 Target.

[0055] Example 2 had a high temperature resistant electrode having a doped oxide metal gradient layer, tested, maintained at 1200 ° C, still maintaining a good surface morphology, such as Figure 4 As shown, although there are some tiny holes, it does not affect the continuity of the electrode. It can be seen that the electrode structure of the present invention, high temperature resistance, has good application prospects.

Embodiment 3

[0057] Step 1, the substrate is sequentially washed with acetone, alcohol and deionized water, and remove organic pollutants on the surface, and then blow dry with nitrogen.

[0058] Step 2, the substrate after the step is placed in an atomic layer deposition system, vacuum, deposited 20 nm high temperature oxide layer.

[0059] Step three, apply a photoresist on the high temperature oxide layer, complete the hierarchy with the baking with a split-hot plate, and then use the photolithography, form a mask, and add the developer and water to press 1. : 7 ratio of 22S in a mixed mixture, and finally washed with deionized water to obtain a doped oxide metal gradation layer pattern.

[0060] Step 4, the sample after step three-shot is placed on the substrate table of the magnetron sputtering system (model of DISCOVERY635, US Denton, and then put the substrate stage into the vacuum chamber, carrying a metal target Common sputtering with the oxide target, a 100 nm thick oxide metal gradi...

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Abstract

The invention discloses a high-temperature-resistant electrode with an oxide-doped metal gradient layer and a preparation method of the high-temperature-resistant electrode. The existing interdigital electrode is easy to agglomerate and degrade at high temperature. The method comprises the following steps: a high-temperature-resistant oxide layer is deposited on a substrate; n doped oxide metal gradient layers are deposited on the high-temperature-resistant oxide layer at intervals; a plurality of thin film layer groups are deposited on each doped oxide metal gradient layer; if the number of the thin film layer groups is greater than 1, the thin film layer groups are stacked up and down; the thin film layer group consists of a doped oxide metal gradient layer and a thin film layer which are arranged from top to bottom; and the material of the oxide-doped metal gradient layer is oxide-doped metal. According to the invention, the high-temperature-resistant oxide layer is added in the electrode layer, so that the melting and fracture of the electrode at high temperature can be effectively prevented; the oxide is doped in the electrode layer, so that recrystallization and grain growth at high temperature can be effectively prevented, and the electrode has enough conductivity and is applied to a high-temperature surface acoustic wave device.

Description

Technical field [0001] The present invention belongs to the field of sound surface wavefriend manufacturing, and in particular, the present invention relates to a high temperature electrode having a doped oxide metal gradation layer and a preparation method thereof. Background technique [0002] In modern industrial environments, in an environment greater than 1000 ° C, the test of parameters such as temperature, pressure is an important task in the fields of oil, chemical, automotive, aerospace, military, and difficulties in high temperature environment, electronic The line is difficult to work normally, and the use of conventional sensors is limited. Acoustic surface wave sensors are a new type of sensor device, widely used in signal processing, frequency control, and information sensing. With high precision, integrated, microcomputer control, especially its own high frequency characteristics and piezoelectric properties of the substrate, the sensor is unveiled, and wireless me...

Claims

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Application Information

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IPC IPC(8): H01L41/047H01L41/29C23C14/00C23C14/02C23C14/08C23C14/14C23C14/35C23C16/40C23C16/455C23C28/00
CPCC23C16/40C23C16/45525C23C14/022C23C14/352C23C14/14C23C14/08C23C14/0005C23C28/32C23C28/345C23C28/36H10N30/871H10N30/877H10N30/06
Inventor 轩伟鹏章弥灵陈金凯董树荣金浩骆季奎
Owner HANGZHOU DIANZI UNIV
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