Two-dimensional Van der Waals bipolar transistor based on tellurium nanosheets and construction method thereof
A bipolar transistor, tellurium nanotechnology, applied in the manufacture of transistors, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problems of poor performance of BJTs, the problem of electrode contact is not considered, and the service performance of unstable devices, etc. Effects of strong thickness dependence, stable p-type semiconductor properties, good air stability
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Embodiment 1
[0078] like figure 1 As shown, a two-dimensional van der Waals bipolar transistor based on tellurium nanosheets includes 1 high work function metal electrode, 2 thick layer tellurium nanosheets, 3 thin layer tellurium nanosheets, 4 two-dimensional n-type semiconductor materials, 5 low work function Functional metal electrodes, 6 target substrates;
[0079]Wherein, the thick-layer tellurium nanosheet 2 is covered on the target substrate 6; the two-dimensional n-type semiconductor material 4 is covered on the surface of the thick-layer tellurium nanosheet 2, and the regions 2-4 are emitter junctions for emitting electrons; The thin-layer tellurium nanosheet 3 covers the surface 4 of the two-dimensional n-type semiconductor material, and the regions 3-4 are collector junctions for collecting electrons; the high work function metal electrode 1 is arranged on the thick-layer tellurium nanosheet 2 and On the surface of the thin-layer tellurium nanosheet 3, the electrode 1 is Au wit...
Embodiment 2
[0091] The device structure of the two-dimensional van der Waals bipolar transistor based on tellurium nanosheets in this example is basically the same as that in Example 1, except that the preparation process and transfer method of the two-dimensional n-type semiconductor are different, and the number of electrodes is upgraded to two deposited on the surface of each material. .
[0092] like figure 1 As shown, a two-dimensional van der Waals bipolar transistor based on tellurium nanosheets includes 1 high work function metal electrode Pd / Au (thickness is 5nm / 70nm), 2 thick layers of tellurium nanosheets (thickness is 30nm), 3 thin layers Tellurium nanosheets (thickness is 5.5nm), 4 molybdenum disulfide (thickness is 3nm), 5 low work function metal electrode Cr / Au (thickness is 5nm / 50nm), 6 target substrate (300nm thick insulating silicon substrate);
[0093] Wherein, the thick-layer tellurium nanosheet 2 is covered on the target substrate 6; the molybdenum disulfide 4 is cov...
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