Device and method for preparing In2Se3

A vertical placement, quartz tube technology, applied in the methods of chemically changing substances by atmospheric pressure, chemical instruments and methods, chemical/physical processes, etc., can solve the problems of low production efficiency and too large feeding amount, etc. To achieve the effect of low equipment requirements, reduce volatilization, and avoid a sharp rise in reaction temperature

Active Publication Date: 2021-07-16
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using this method to prepare In 2 Se 3 , although to a certain extent it solves the problem that the reaction of In and Se will release a large amount of heat per unit time, the amount of feed should not be too large, and the production efficiency is low

Method used

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  • Device and method for preparing In2Se3
  • Device and method for preparing In2Se3

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] This example provides a method for preparing In 2 Se 3 A device comprising a rocking furnace 1, a quartz tube 2 and a quartz crucible 3. Wherein, the swing furnace 1 is provided with a first heating zone 4 and a second heating zone 5, the quartz tube 2 is vertically placed in the swing furnace 1, the lower end of the quartz tube 2 corresponds to the first heating zone 4, and the upper end of the quartz tube 2 It corresponds to the second heating zone 5 . The quartz crucible 3 is vertically placed inside the upper end of the quartz tube 2 through the support plate 6 , and the bottom of the quartz crucible 3 is provided with a nozzle 7 passing through the support plate 6 .

[0032] Specifically, the inner diameter of the nozzle 7 is 0.3-1.5 mm. The center of support plate 6 is provided with the jack that allows material nozzle to pass through, and the aperture of jack is 2cm; Support plate 6 is also provided with 4 through holes of symmetrical distribution, and the ape...

Embodiment 2

[0034] This example provides a method for preparing In 2 Se 3 The method adopts the device of embodiment 1 to prepare, and the steps are as follows:

[0035] (1) Preliminary synthesis of In 2 Se 3

[0036] a: According to In 2 Se 3 In order to measure the mass fraction of In and Se in the medium, weigh 4.922kg of In bars and put them into a quartz crucible. The inner diameter of the nozzle of the quartz crucible is 0.3mm. In the quartz tube, the quartz crucible is placed on the support plate, and the nozzle of the quartz crucible passes through the support plate;

[0037] b: Introduce nitrogen gas into the quartz tube to replace the air in the quartz tube. The flow rate of nitrogen gas is 6L / min, and the ventilation time is 1h. After the ventilation is completed, cover the tail cap of the quartz tube and place the quartz tube vertically in the swing furnace;

[0038] c: First turn on the first heating zone of the swing furnace, raise the temperature to 250°C, and keep i...

Embodiment 3

[0043] This example provides a method for preparing In 2 Se 3 The method also adopts the device of embodiment 1 to prepare, and the steps are similar to the steps of embodiment 2, the difference is only: the inner diameter of the nozzle of the quartz crucible is different, and the inner diameter of the nozzle of the quartz crucible of the present embodiment is 1.5 mm. Specific steps are as follows:

[0044] (1) Preliminary synthesis of In 2 Se 3

[0045] a: According to In 2 Se 3 In the mass fraction of In and Se, weigh 4.922kg of In bar and put it into the quartz crucible. The inner diameter of the nozzle of the quartz crucible is 1.5mm. In the quartz tube, the quartz crucible is placed on the support plate, and the nozzle of the quartz crucible passes through the support plate;

[0046] b: Introduce nitrogen gas into the quartz tube to replace the air in the quartz tube. The flow rate of nitrogen gas is 6L / min, and the ventilation time is 1h. After the ventilation is...

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Abstract

The invention discloses a device and a method for preparing In2Se3. The device comprises a rocking furnace, a quartz tube and a quartz crucible. A first heating zone and a second heating zone are arranged in the rocking furnace. The quartz tube is vertically placed in the rocking furnace, the lower end of the quartz tube corresponds to the first heating zone, and the upper end of the quartz tube corresponds to the second heating zone. The quartz crucible is vertically placed in the upper end of the quartz tube through a supporting plate, and a material nozzle penetrating through the supporting plate is arranged at the bottom of the quartz crucible. In addition, the In2Se3 is prepared by adopting a two-step method, the In2Se3 is initially synthesized at first, and then the initially synthesized In2Se3 is subjected to homogenization treatment. According to the method, a large amount of In2Se3 can be produced in a single batch, less heat is released in unit time, the reaction temperature is low, the safety is high, the volatilization loss of Se is small, and after homogenization treatment, In2Se3 with uniformly distributed components can be obtained.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, in particular to a method for preparing In 2 Se 3 devices and methods. Background technique [0002] Indium Selenide (In 2 Se 3 ) is a direct band gap III-IV binary semiconductor material, which is widely used in memory, photodetection devices, thermoelectric devices, thin-film solar cells and other fields because of its excellent photoelectric properties. In 2 Se 3 target as the preparation of In 2 Se 3 The raw material of the film, its purity, density, resistivity, etc. will affect the performance of the film. Currently, In 2 Se 3 The target is mainly prepared by powder metallurgy method, and the performance of the target will not only be affected by the molding process, but also In 2 Se 3 The purity, particle size distribution, and crystal structure of the powder will have an important impact on the final performance of the target. Therefore, producing the required...

Claims

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Application Information

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IPC IPC(8): B01J3/00B01J6/00C01B19/04
CPCB01J3/006B01J3/002B01J6/007C01B19/007Y02P70/50
Inventor 谢小豪白平平沈文兴童培云肖惠云
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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