SnSe/CNT high-temperature flexible thermoelectric thin film material and preparation method thereof
A thermoelectric thin film, high-temperature flexible technology, applied in the field of tin selenide/carbon nanotube high-temperature flexible thermoelectric thin film material and its preparation, can solve the problems of low thermal conductivity, etc., achieve high crystallinity, improve flexibility, and ensure thermoelectric performance Effect
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[0035] In this embodiment, the preparation method of SnSe / CNT high-temperature flexible thermoelectric thin film material includes the following steps:
[0036] (S1) Surface treatment:
[0037] Clean the surface of the substrate (such as: silicon dioxide wafer), rinse with alcohol, acetone and deionized water for 12 minutes, and then heat and bake at 398K for 20 minutes in a vacuum environment;
[0038] The substrate (such as: CNT) is fixed on the metal bracket by electrostatic force, and the metal bracket is fixed on the coated sample plate with silver glue, and baked at 398K for 20 minutes;
[0039] Such as image 3 As shown, the structure of the metal bracket is to carve out 5 small frames of size from a 4cm×3cm copper plate: three 3cm×1cm are arranged side by side vertically, one 1cm×1cm and one 2cm×1cm are facing each other horizontally, The metal material used is copper, and the dimensions are shown in the schematic diagram. The carbon nanotubes 2 can be flatly spread...
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