Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Charge pump with wide locking range and low current mismatch

A locking range, charge pump technology, applied in the field of microelectronics, can solve the problems of restricting charge pump application, charge sharing, current mismatch, etc.

Active Publication Date: 2021-04-13
CHONGQING UNIV OF POSTS & TELECOMM
View PDF19 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

figure 1 The traditional charge pump shown has problems such as charge sharing and current mismatch, which restrict the application of charge pumps in high-performance systems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Charge pump with wide locking range and low current mismatch
  • Charge pump with wide locking range and low current mismatch
  • Charge pump with wide locking range and low current mismatch

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0021] A wide lock range low current mismatch charge pump such as figure 2 As shown, including charge pump bias circuit 1, charge pump core circuit 2;

[0022] Wherein, the signal output terminal of the charge pump bias circuit 1 is connected to the signal input terminal of the charge pump core circuit 2, and the signal output terminal of the charge pump core circuit 2 is connected to the signal input of the charge pump bias circuit 1 terminal; the charge pump bias circuit 1 provides a bias signal for the charge pump core circuit 2, and the charge pump core circuit 2 provides charge / discharge current for the filter capacitor of the subsequent stage circuit.

[0023] As a preferred technical solution, such as figure 2 As shown, the charge pump bias circuit 1 includes: reference current source IREF, NMOS transistor M1, NMOS transistor M2, PMOS transistor M3, NMOS transistor M4, PMOS transistor M5, NMOS transistor M6, PMOS transistor M7, PMOS transistor M8 and PMOS transistor...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a charge pump with a wide locking range and low current mismatch. The charge pump comprises a charge pump biasing circuit, a charge pump core circuit and the like. According to the invention, the PMOS tube M9 of the charge pump biasing circuit is connected through a diode, and the grid electrode of the PMOS tube M8 is connected with the output end of the charge pump, so that the problem that the discharge current is small when the output voltage of the charge pump is low is solved in the discharge state, and the voltage dynamic range of the output end of the charge pump is enlarged; an error amplifier op1 in a charge pump core circuit adopts unit gain connection, so that a charge sharing effect can be suppressed at the moment of charge / discharge conversion; and the PMOS tube M17 and the PMOS tube M10 respectively form a feedback compensation circuit with an error amplifier op2, and the voltage of the output end of the charge pump in a charging state is gradually increased so as to reduce the grid voltage of the PMOS tube M17 and the grid voltage of the PMOS tube M10 and increase the charging current, so that the dynamic range of the voltage of the output end of the charge pump is further enlarged so as to achieve the charge pump with wide locking range and low current mismatch.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a charge pump with a wide locking range and low current mismatch. Background technique [0002] The charge pump is an important functional module of the delay-locked loop, and its performance directly affects the overall performance of the delay-locked loop. figure 1 As a basic charge pump structure, when the switch S1 is closed and S2 is open, the charging current source I UP When the capacitor C1 is charged, the voltage at the output terminal VCtrl of the charge pump rises; when the switch S1 is disconnected and S2 is closed, the discharge current source I DN When the capacitor C1 is discharged, the voltage at the output terminal VCtrl of the charge pump drops; when the switch S1 and the switch S2 are turned on or off at the same time, the voltage at the output terminal VCtrl of the charge pump remains unchanged. figure 1 The traditional charge pump shown...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H02M3/07
CPCH02M3/07
Inventor 周前能石头李红娟
Owner CHONGQING UNIV OF POSTS & TELECOMM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com