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Lead frame for semiconductor packaging and preparation method thereof

A lead frame and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve the impact on the reliability of packaged products, the electroplating layer is easily damaged or scratched, and wire bonding can be increased Height and other issues to achieve the effect of reducing chemical damage, good wire bonding performance, avoiding warping or strength reduction

Pending Publication Date: 2021-03-19
NINGBO KANGQIANG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the overall thinning of the lead frame is prone to warping and deformation during storage and transportation
In addition, the existing lead frame needs to be electroplated on the surface to provide lead welding points, and the electroplating layer also has a certain thickness, which will also increase the height of the wire bonding, which is not conducive to reducing the thickness of the package
The protruding electroplating layer on the surface of the lead frame is also easily damaged or scratched, which is not conducive to wiring, and will also affect the reliability of packaged products

Method used

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  • Lead frame for semiconductor packaging and preparation method thereof
  • Lead frame for semiconductor packaging and preparation method thereof
  • Lead frame for semiconductor packaging and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Embodiment 1 provides a lead frame for semiconductor packaging, which is prepared by the following method:

[0041] (1) Film: Prepare the substrate 1 that has been degreased, cleaned and dried, such as figure 1 As shown in (a), a layer of dry film 21, 22 is respectively attached to the upper and lower surfaces of the substrate. After the dry film is pasted, as shown in figure 1 as shown in (b);

[0042] (2) Microetching: such as figure 1 (c) and figure 1(d), aligning the black and white negative film with the substrate, exposing and transferring the image of the part to be removed to the dry film 21 on the upper surface 11 of the substrate; and then developing to remove the part of the dry film that has not undergone photopolymerization, exposing The area 3 to be electroplated on the upper surface of the lead frame unit; then spray the substrate with a microetching solution composed of copper chloride, sodium chlorate and hydrochloric acid to remove part of the thick...

Embodiment 2

[0048] The lead frame provided in embodiment two, the preparation process is the same as that in embodiment one, and the difference with embodiment one is only that H + The concentration is 3-3.3 mol / L; other parameters are the same as in Example 1.

[0049] It is determined that in this embodiment the thickness of the microetched groove is 8 μm, the thickness of the electroplating layer is 8 μm, and the overall thickness of the lead frame is 0.15 mm.

Embodiment 3

[0051] The preparation process of the lead frame provided in the third embodiment is the same as that in the first embodiment, and the only difference from the first embodiment is that the temperature of the microetching treatment is 56-58° C.; other parameters are the same as those in the first embodiment.

[0052] It has been determined that the thickness of the microetching groove in this embodiment is 9 μm, the thickness of the electroplating layer is 9 μm, and the overall thickness of the lead frame is 0.15 mm.

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Abstract

The invention belongs to the technical field of semiconductor devices, and particularly relates to a lead frame for semiconductor packaging and a preparation method thereof. The lead frame comprises aframe body and an electroplating layer, the upper surface of the frame body is provided with a plurality of micro-etching grooves, each micro-etching groove is filled with the electroplating layer, and the thickness of the electroplating layer is the same as that of each micro-etching groove. According to the lead frame disclosed by the invention, the concave micro-etching grooves are formed in the frame body in a mode of first micro-etching and then electroplating, so that the electroplating layer is formed in the micro-etching grooves, and through reasonable control of micro-etching and electroplating processes, the thickness of the lead frame can be reduced, the thinning production of semiconductor packaging is facilitated, the effect of protecting the electroplating layer can also beachieved, and therefore, the weldability and the product percent of pass can be better ensured.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a lead frame used for semiconductor packaging and a preparation method thereof. Background technique [0002] The lead frame is the basic component for the manufacture of integrated circuit semiconductor components. It provides a carrier for the chip of the integrated circuit, and realizes the connection of the chip and the electrical signal of the external circuit board by means of the bonding material. It can also provide a heat dissipation channel together with the package shell to release heat. With the development trend of miniaturization of electronic products, packaging technology with high integration and small volume has gradually become the main market demand, and the requirements for thinning and miniaturization of semiconductor packaging products are also getting higher and higher. Among them, the quad flat no-lead package (QFN) has the chara...

Claims

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Application Information

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IPC IPC(8): H01L23/495H01L21/48
CPCH01L21/4821H01L23/49548H01L23/49582
Inventor 黎超丰冯小龙章新立林渊杰林杰
Owner NINGBO KANGQIANG ELECTRONICS CO LTD
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