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Thulium-erbium-dysprosium triple-doped lead fluoride intermediate infrared laser crystal, preparation method and application

A technology of heterogeneous lead fluoride and infrared laser, applied in chemical instruments and methods, lasers, crystal growth, etc., to improve pump absorption efficiency, suppress self-termination bottleneck effect, and improve performance

Inactive Publication Date: 2021-03-02
JINAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no report on mid-infrared band laser crystals doped with thulium, erbium and dysprosium tridoped lead fluoride at home and abroad.

Method used

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  • Thulium-erbium-dysprosium triple-doped lead fluoride intermediate infrared laser crystal, preparation method and application
  • Thulium-erbium-dysprosium triple-doped lead fluoride intermediate infrared laser crystal, preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] Example 1: Tm 0.01 Er 0.01 Dy 0.01 Pb 0.97 f 2 Crystal Growth Preparation

[0023] PbF 2 (99.999%), TmF 3 (99.999%), ErF 3 (99.999%) and DyF 3 (99.999%) are fully mixed according to the molar ratio of the proportioning equation, put into a self-made graphite crucible and sealed after fluorination treatment. Place the crucible in the high-temperature zone of the downhill furnace at a temperature of 980°C for 6 hours, and keep it warm for 4 hours to fully melt it. The growth atmosphere is N 2 gas, the crucible grows at a rate of 1.2-1.8mm / h, and the temperature gradient in the growth area is kept at 20-80°C / cm; h rate to cool slowly to room temperature.

Embodiment 2

[0024] Example 2: Tm 0.02 Er 0.01 Dy 0.005 Pb 0.965 f 2 Crystal Growth Preparation

[0025] PbF 2 (99.999%), TmF 3 (99.999%), ErF 3 (99.999%) and DyF 3 (99.999%) are fully mixed according to the molar ratio of the proportioning equation, put into a self-made graphite crucible and sealed after fluorination treatment. Place the crucible in the high-temperature zone of the downhill furnace at 1060°C for 8 hours, and keep it warm for 4 hours to fully melt it. The growth atmosphere is N 2 gas, the crucible grows at a rate of 1.4-1.6mm / h, and the temperature gradient in the growth area is kept at 20-60°C / cm; Slowly cooled to room temperature at rate h, the PbF obtained after the end of the growth 2 The laser crystal has good optical quality. Schematic diagram of the sensitization and deactivation mechanism of thulium, erbium and dysprosium tri-doped lead fluoride laser crystals. figure 1 shown.

Embodiment 3

[0026] Example 3: Tm 0.02 Er 0.02 Dy 0.01 Pb 0.95 f 2 The application of crystals in mid-infrared continuous laser devices will PbF 2 (99.999%), TmF 3 (99.999%), ErF 3 (99.999%) and DyF 3 (99.999%) are fully mixed according to the molar ratio of the proportioning equation, put into a self-made graphite crucible and sealed after fluorination treatment. Place the crucible in the high-temperature zone of the downhill furnace at a temperature of 1080°C for 8 hours, and keep it warm for 6 hours to fully melt it. The growth atmosphere is N 2 gas, the crucible grows at a rate of 1.5-1.8mm / h, and the temperature gradient in the growth area is kept at 20-50°C / cm; h rate to cool slowly to room temperature. After the growth, the crystals were taken out and directional cut, processed and polished, and spectroscopic analysis was performed to characterize their optical properties. Crystal samples are used in mid-infrared continuous laser devices such as figure 2 As shown, the pu...

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Abstract

The invention discloses a thulium-erbium-dysprosium triple-doped lead fluoride intermediate infrared laser crystal, a preparation method and application. In the crystal, erbium ions are used as activeions to realize fluorescence emission of 2.6-2.9 microns, corresponding to energy level transition of erbium ions from 4I11 / 2 to 4I13 / 2, and dysprosium ions are used as deactivation ions of erbium ions, on the one hand, dysprosium ions enable the service life of the lower laser energy level (4I13 / 2) of erbium ions to be shortened, and on the other hand, dysprosium ion 6H13 / 2-to-6H15 / 2 particle number inversion and intermediate infrared laser output are achieved; thulium ions have dual effects and serve as sensitizing ions of erbium ions and dysprosium ions or deactivating ions of erbium ions.The substrate material is a lead fluoride crystal, the physical and chemical properties and the optical properties are good, phonon energy is low, continuous, broadband tunable and ultra-short pulseintermediate infrared laser output can be achieved in a 3-micron waveband, and the thulium-erbium-dysprosium triple-doped lead fluoride intermediate infrared laser crystal has wide application prospects in the fields of military national defense, laser medical treatment and scientific research.

Description

technical field [0001] The invention relates to the technical field of infrared laser materials and devices, in particular to a mid-infrared laser crystal doped with thulium-erbium-dysprosium tri-doped lead fluoride, a preparation method and an application. Background technique [0002] Because the mid-infrared ~ 3 micron band is located in the strong absorption peak of water, the absorption coefficient of water is high, which can reduce the damage of laser emission to human tissues, and can be widely used in laser medical fields such as ophthalmology and dentistry. At the same time, because the laser in this band has strong atmospheric penetration ability and small molecular scattering, it is located in the molecular fingerprint area, and can be widely used in remote sensing detection, air pollution monitoring, space optical communication, scientific research and other fields. [0003] At present, the rare earth ions that can achieve mid-infrared emission in the ~3 micron b...

Claims

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Application Information

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IPC IPC(8): C30B29/12C30B28/06C30B11/00H01S3/16
CPCC30B11/00C30B28/06C30B29/12H01S3/1606H01S3/1608H01S3/1616H01S3/1645
Inventor 张沛雄王宇皓廖家裕李真尹浩朱思祁陈振强
Owner JINAN UNIVERSITY
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