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Panchromatic Micro/Nano LED array direct epitaxy method and structure

An array and epitaxy technology, applied in electrical components, electrical solid-state devices, circuits, etc., can solve the problems of difficulty in independent addressing of a single drive and complex technology, reduce manufacturing difficulty and manufacturing cost, overcome process bottlenecks, and achieve ultra-high performance. The effect of high LED density

Inactive Publication Date: 2021-02-05
XIAMEN UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

The RGB three-color LEDs produced by this method are coaxially nested, which may lead to difficulties in subsequent n-type and p-type electrode fabrication, independent addressing, and single drive, and the technology is more complicated.

Method used

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  • Panchromatic Micro/Nano LED array direct epitaxy method and structure
  • Panchromatic Micro/Nano LED array direct epitaxy method and structure
  • Panchromatic Micro/Nano LED array direct epitaxy method and structure

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Embodiment Construction

[0047] The present invention will be further described below through specific embodiments.

[0048] The present invention proposes a direct epitaxial structure of a full-color Micro / Nano LED array, including a bottom-up substrate 101, a buffer layer 102, an unintentionally doped layer 103, an n-type layer 104, and an array of LED light-emitting units. The LED light-emitting unit The array is a light-emitting unit of any color produced by a step-by-step selective area epitaxy method; it also includes an n-type electrode array and a p-type electrode array, the n-type electrode array is electrically connected to the n-type layer 104, and the p-type electrode array is connected to the light-emitting unit The p-type layer is electrically connected to realize independent addressing and driving. The structure of the present invention can realize the independent addressing and driving of each LED.

[0049] The present invention also proposes a direct epitaxial method of Micro / Nano fu...

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Abstract

The invention discloses a panchromatic Micro / Nano LED array direct epitaxy method and structure. The panchromatic Micro / Nano LED array direct epitaxy method comprises the following steps: 1) epitaxially growing a buffer layer, an unintentional doping layer and an n-type layer on a substrate; 2) depositing a first dielectric layer on the n-type layer, manufacturing a first group of micro or nano-pore arrays on the first dielectric layer, and epitaxially growing a first light-emitting unit in the manufactured first group of micron or nano-pore arrays; 3) manufacturing a second dielectric layer,manufacturing a second group of micro or nano-pore arrays on the second dielectric layer, and epitaxially growing a second light-emitting unit in the manufactured second group of micro or nano-pore arrays; 4) manufacturing a third dielectric layer, manufacturing a third group of micro or nano-pore arrays on the third dielectric layer, and epitaxially growing a third light-emitting unit in the manufactured third group of micro or nano-pore arrays; and 5) removing the corrosion of the dielectric layer by using a chemical solution to expose the light-emitting unit. The problem of huge transfer issolved, the panchromatic Micro / Nano LED array can be directly grown in an epitaxial mode, and the method and the structure have huge application potential.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to semiconductor optoelectronic devices and ultra-high resolution display screens, in particular to a full-color Micro / Nano LED array direct epitaxy method and structure. Background technique [0002] With the upgrading of electronic products and the rise of new technologies such as AR, VR, and vehicle displays, people have put forward higher and higher requirements for the performance of display devices, and display technology is also moving towards small size, ultra-high resolution, and ultra-high resolution. High contrast, low power consumption, long service life and other directions are developing rapidly. As the latest generation of display technology, Micro-LED miniaturizes and arrays the traditional LED structure. The size of a single LED chip is less than 100 microns, or even only a few microns. It combines ultra-high resolution, high brightness, It ha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L27/15
CPCH01L27/156H01L33/005H01L33/0075
Inventor 高娜卢诗强李金钗黄凯蔡端俊康俊勇
Owner XIAMEN UNIV
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