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Fabrication of few-layer ti with high etch rate and high lift-off rate based on secondary etching method 3 c 2 t x material method

A technology of secondary etching and etching rate, which is applied in the field of 2D nanomaterials, can solve the problems of incomplete etching, low stripping rate, long etching cycle, etc., and achieve long time period, low production efficiency and high production efficiency Effect

Active Publication Date: 2022-02-15
JIANGXI UNIV OF SCI & TECH
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  • Abstract
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Problems solved by technology

[0008] Therefore, in order to solve the above few-layer Ti 3 C 2 T x In the preparation method of the method, there are problems such as long etching period, incomplete etching and low stripping rate, and it is necessary to provide a high-concentration and few-layer Ti 3 C 2 T x A novel preparation method for nanosheet materials that enables few-layer Ti 3 C 2 T x High-efficiency stripping and dispersion in aqueous solution, no need for later treatment of Ti 3 C 2 T x Long-term ultrasonic stripping to improve Ti 3 C 2 T x The preparation efficiency and product performance, expanding the Ti 3 C 2 T x range of functional applications

Method used

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  • Fabrication of few-layer ti with high etch rate and high lift-off rate based on secondary etching method <sub>3</sub> c <sub>2</sub> t <sub>x</sub> material method
  • Fabrication of few-layer ti with high etch rate and high lift-off rate based on secondary etching method <sub>3</sub> c <sub>2</sub> t <sub>x</sub> material method
  • Fabrication of few-layer ti with high etch rate and high lift-off rate based on secondary etching method <sub>3</sub> c <sub>2</sub> t <sub>x</sub> material method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Preparation of few-layer Ti with high etching rate and high stripping rate based on secondary etching method 3 C 2 T x The method of the material includes the following steps:

[0053] (1) Weigh 1.0g Ti 3 AlC 2 The powder was slowly added to 12ml of HF aqueous solution with a mass fraction of 40%, and the mixed solution was covered and placed in a fume hood, while stirring in a magnetic stirrer and heating up to 35°C, the speed of the magnetic stirrer was 500rpm, and the magnetic stirring was 4h. Then, centrifuge at 4000rpm for 10min, wash with water for several times until neutral, and obtain a pre-etched product;

[0054] (2) Use a graduated cylinder to measure 10 ml of HCl with a concentration of 3 mol / L, and weigh 1.6 g of LiF, slowly add LiF to the HCl solution, and place the mixed solution in a magnetic stirrer at room temperature for 15 minutes and magnetic stirring. The rotating speed of the device is 300rpm, and the mixed solution is used as a secondary et...

Embodiment 2

[0060] Preparation of few-layer Ti with high etching rate and high stripping rate based on secondary etching method 3 C 2 T x The method of the material includes the following steps:

[0061] Except that the concentration of HCl in (2) is 6mol / L;

[0062] (3) medium magnetic stirring for 6h;

[0063] The rest are the same as in Example 1.

[0064] After drying the upper layer suspension, 800 mg of few-layer Ti was obtained 3 C 2 T x , calculate Ti according to the mass 3 C 2 T x Etching rate of 96%, few layers of Ti 3 C 2 T x The peeling rate is 80%.

[0065] Figure 4 ( Figure 4 (a) and Figure 4 (b)) Few-layer Ti for the product prepared in Example 2 of the present invention 3 C 2 T x The TEM image of the material, it can be seen from the TEM results that the few-layer Ti prepared in Example 2 3 C 2 T x The sample still has an ultra-thin two-dimensional layered structure, and the nanosheets have a relatively large lateral size, indicating that the few-...

Embodiment 3

[0067] Preparation of few-layer Ti with high etching rate and high stripping rate based on secondary etching method 3 C 2 T x The method of the material includes the following steps:

[0068] Except that the concentration of HCl in (2) is 12mol / L;

[0069] (3) medium magnetic stirring for 6h;

[0070] The rest are the same as in Example 1.

[0071] After drying the upper suspension, 850 mg of few-layer Ti were obtained 3 C 2 T x , calculate Ti according to the mass 3 C 2 T x Etching rate of 95%, few layers of Ti 3 C 2 T x The peeling rate was 85%.

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Abstract

The invention discloses the preparation of few-layer Ti with high etching rate and high stripping rate based on a secondary etching method 3 C 2 T x The method of material specifically comprises the following steps: Ti 3 AlC 2 The pre-etched product is obtained by pre-etching with HF aqueous solution; the salt solution formed after the reaction of LiF and HCl is configured as the secondary etchant; the pre-etched product is immersed in the secondary etchant for secondary etching to obtain the secondary Etching products; secondary etching products are processed to obtain few-layer Ti with high etching rate and high stripping rate 3 C 2 T x Material. The present invention prepares few-layer Ti with high etching rate and high stripping rate based on secondary etching method 3 C 2 T x Materials approach achieves few-layer Ti 3 C 2 T x High-efficiency stripping and dispersion in aqueous solution, no need for later treatment of Ti 3 C 2 T x Long-term ultrasonic stripping improves the Ti 3 C 2 T x The preparation efficiency and product performance expand the few-layer Ti 3 C 2 T x range of functional applications.

Description

technical field [0001] The invention belongs to the technical field of 2D nanomaterials, and relates to the preparation of few-layer Ti with high etching rate and high stripping rate based on a secondary etching method 3 C 2 T x material method. Background technique [0002] Two-dimensional layered transition metal carbide nanosheets Ti 3 C 2 T x With good conductivity and hydrophilicity, it can be used in lithium-ion batteries, supercapacitors, catalysts, sensors, reinforcing materials in polymers, adsorption materials, and electromagnetic interference shielding. Ti 3 C 2 T x by etchant (such as HF, LiF+HCl salt solution, NH 4 HF 2 etc.) will Ti 3 AlC 2 The Al atoms in the phase are removed, where T x means Ti 3 AlC 2 Functional groups (-OH, -F, =O) attached to its surface after being etched. [0003] Currently, Ti 3 C 2 T x Nanosheets are mainly prepared by etching, ultrasonic / intercalation, and stripping. The existing etching technology usually selects...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/921B82Y40/00
CPCC01B32/921B82Y40/00C01P2004/03C01P2002/72C01P2004/04C01P2004/22
Inventor 刘柏雄李聪刘智平任世刚周少勇
Owner JIANGXI UNIV OF SCI & TECH
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