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A perovskite light-emitting diode with mixed cations and mixed anions and its preparation method

A technology of light-emitting diodes and mixed cations, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as performance gaps, achieve reduced density, be suitable for large-scale applications, and have simple preparation processes.

Active Publication Date: 2022-03-29
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although PeLEDs are developing rapidly, there are still few reports of EQE exceeding 20%, and there is still a big gap in performance compared with organic light-emitting diodes (OLEDs) and inorganic quantum dot light-emitting diodes (QDLEDs), which are also surface light sources.

Method used

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  • A perovskite light-emitting diode with mixed cations and mixed anions and its preparation method
  • A perovskite light-emitting diode with mixed cations and mixed anions and its preparation method
  • A perovskite light-emitting diode with mixed cations and mixed anions and its preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0050] A method for preparing a perovskite light-emitting diode with mixed cations and mixed anions, comprising the following steps:

[0051] (1) Preparation of perovskite precursor solution: PEABr (phenethylamine bromide), NaBr, FABr (formamidine bromide), FACl (formamidine chloride), CsBr, PbBr 2 According to 0.4:0:0:0:1.6:1, 0.4:0.1:0:0:1.6:1, 0.4:0.1:0.1:0:1.6:1, 0.4:0.1:0:0.1:1.6:1 respectively The molar ratio is dissolved in the solvent DMSO, where PbBr 2 The molar concentration of the solution was 0.3 moles per liter, and the solution was stirred on a hot stage at 45° C. for 12 hours, then the solution was cooled to room temperature, allowed to stand, and the supernatant liquid was taken and filtered. The specific formulations of the four perovskite precursor solutions are shown in Table 1.

[0052] Table 1. Formulations of four perovskite precursor solutions (unit: moles per liter)

[0053]

[0054] (2) Preparation of nickel oxide precursor solution: Dissolve 0.4...

Embodiment 2

[0063] The device structure and preparation method are basically the same as in Example 1, the difference lies in the preparation of the perovskite light-emitting layer precursor solution. The specific formula of the perovskite precursor solution is shown in Table 3, and the mixed cation is also Na + 、Cs + and FA + , the mixed anion is also Br - and Cl - , but the chloride ion comes from PEACl (phenethylammonium chloride).

[0064] Table 3. Recipe of perovskite precursor solution (unit: mol per liter)

[0065]

[0066] Figure 6 is the emission spectrum of the device, Figure 7 , Figure 8 and Figure 9 They are the current density-voltage, luminance-voltage, external quantum efficiency-luminance characteristic curves of the device, and the corresponding device performance parameters are shown in Table 4. The results showed that this mixed cation (Na + 、Cs + and FA + ) and mixed anions (Br - and Cl - , the maximum external quantum efficiency of perovskite light...

Embodiment 3

[0070] The device structure and preparation method are basically the same as the examples, except that the preparation of the perovskite light-emitting layer precursor solution, the specific formula of the perovskite precursor solution is shown in Table 5, and the mixed cation is Na + 、Cs + and FA + , the mixed anion is Br - and Cl - , the chloride ion comes from NaCl.

[0071] Table 5. Recipe of perovskite precursor solution (unit: mol per liter)

[0072]

[0073] Figure 10 is the emission spectrum of the device, Figure 11 , Figure 12 and Figure 13 They are the current density-voltage, luminance-voltage, external quantum efficiency-luminance characteristic curves of the prepared devices, respectively, and the corresponding device performance parameters are shown in Table 6. The results showed that this mixed cation (Na + 、Cs + and FA + ) and mixed anions (Br - and Cl - , the maximum external quantum efficiency of the perovskite light-emitting diodes with c...

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Abstract

The invention discloses a perovskite light-emitting diode with mixed cations and mixed anions and a preparation method thereof. The perovskite light-emitting diode sequentially comprises an electrode 1, a transport layer 1, a perovskite light-emitting layer, a transport layer 2 and an electrode 2 ; The perovskite light-emitting layer is a metal halide perovskite light-emitting material with mixed cations and mixed anions, which is composed of LX, AX and BX 2 Prepared, wherein L is an organic amine ion, A is a monovalent cation, B is a divalent metal cation, and X is I ‑ 、Br ‑ , Cl ‑ 、SCN ‑ 、TFA ‑ or CH 3 COO ‑ Two or more of them, and at least one halide ion. The present invention reduces the formation of perovskite cation vacancies and anion vacancies through the component regulation strategy of mixed cations and mixed anions, reduces the density of perovskite defect states, and suppresses the non-radiative recombination caused by vacancy defects, thereby improving PeLEDs Luminous efficiency.

Description

technical field [0001] The invention belongs to the technical field of photoelectric materials and devices, and in particular relates to a perovskite light-emitting diode with mixed cations and mixed anions and a preparation method thereof. Background technique [0002] Metal halide perovskite materials have attracted extensive attention in the fields of solar cells, light-emitting diodes, lasers, and photodetectors due to their excellent optoelectronic properties and low raw material cost. This metal halide perovskite material has an ABX 3 structure, where A is an organic amine or an alkali metal cation, such as MA + (methylamine cation), FA + (formamidine cation), Cs + etc., B is an inorganic metal cation such as Pb 2+ , Sn 2+ 、 Ge 2+ etc., X is a halide anion such as I - 、Br - , Cl - wait. [0003] At present, the photoelectric conversion efficiency of perovskite solar cells has exceeded the certified efficiency of 25%, and the stability problem is gradually bei...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/54H01L51/56
CPCH10K85/00H10K50/80H10K50/11H10K71/00
Inventor 陈江山马东阁晋光荣杨德志乔现锋
Owner SOUTH CHINA UNIV OF TECH
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