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Etchant

一种蚀刻液、膦酸的技术，应用在表面浸蚀组合物、电气元件、电固体器件等方向，能够解决IGZO腐蚀、不能达成IGZO防蚀性、加工性等问题，达到防止IGZO腐蚀、降低制造成本的效果

Active Publication Date: 2020-11-06
MITSUBISHI GAS CHEM CO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it is known that IGZO is easily etched by acid and alkali, so when source / drain wiring is formed using these etchant, the IGZO as the base is corroded.
[0005] Currently, as an etchant for suppressing damage to IGZO, a chemical solution characterized by a low pH described in JP-A-2016-11342 (Patent Document 1) is known, but sufficient corrosion resistance of IGZO cannot be achieved. , processability

Method used

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Effect test

preparation example Construction

[0054] [Preparation method of etching solution]

[0055] The etching solution of the present invention passes through HEDP (A), phosphonic acid (B), hydrogen peroxide (C), nitric acid (D), fluorine compound (E), azole (F), alkali (G) and other as required It is prepared by adding water (preferably ultrapure water) to the ingredients and stirring until they become uniform.

[0056] The pH range of the composition liquid is not particularly limited, but is usually 1.5 to 2.8, preferably 1.8 to 2.5. By being within this range, it is possible to appropriately prevent corrosion of IGZO and to etch the wiring material.

[0057] [How to use etchant]

[0058] The object can be etched by bringing the etchant of the present invention into contact with the object.

[0059] The method of bringing the etching solution of the present invention into contact with the object is not particularly limited. For example, a method of contacting the object with the etching liquid of the present in...

Embodiment

[0066] Hereinafter, although an Example demonstrates this invention more concretely, Embodiment can be changed suitably within the range which exhibits the effect of this invention.

[0067] In addition, unless otherwise specified, % means mass %.

[0068] [Substrate for evaluation]

[0069]

[0070] film thickness by sputtering (100nm) IGZO (100mm×100mm×1mm) with an elemental ratio of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) of 1:1:1:4 was formed on a glass substrate.

[0071]

[0072] Titanium was sputtered to a thickness of 25 nm on a glass substrate to form a titanium layer, then copper was sputtered to a thickness of 600 nm, and a copper layer of a wiring material was laminated. Next, a resist is applied, a pattern mask is exposed and transferred, and then developed to form a wiring pattern, and a multilayer film (100mm×100mm×1mm) including a copper layer and a titanium layer is produced on a glass substrate.

[0073] [Evaluation method]

[0074] [Etch...

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Abstract

The present invention provides an etchant less causing damage to IGZOs. The etchant of the present invention comprises hydroxyethanediphosphonic acid (A), one or more phosphonic acids (B), hydrogen peroxide (C), nitric acid (D), a fluorine compound (E), an azole (F), and an alkali (G), and is characterized in that the phosphonic acids (B) comprise one or more phosphonic acids selected from the group consisting of diethylenetriaminepentamethylenephosphonic acid, N,N,N',N'-ethylenediaminetetrakismethylenephosphonic acid, and aminotrimethylenephosphonic acid and that the proportion of the hydroxyethanediphosphonic acid (A) is in the range of 0.01-0.1 mass% and the proportion of the phosphonic acids (B) is in the range of 0.003-0.04 mass%.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to a protective solution and an etching solution for IGZO. Background technique [0002] As an oxide semiconductor material, indium gallium zinc oxide (IGZO) is being studied as a useful material. However, it is known that IGZO is easily etched by acid and alkali, and therefore, when source / drain wiring is formed using these etching solutions, the IGZO as a base is corroded. [0003] To deal with this problem, an etch stop type structure in which source / drain wiring is formed after forming a protective layer on IGZO has been adopted in the past (refer to figure 1 ), but the manufacturing becomes complicated, and as a result, the cost increases. Therefore, in order to adopt a back channel etch type structure that does not require a protective layer (refer to figure 2 ), and an etchant capable of etching various wiring materials while suppressing damage to IGZO is desired (see Non-Paten...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18H01L21/308
CPCC23F1/18H01L21/32134H01L29/7869H01L29/66969C09K13/08H01L21/47635H01L27/1225H01L29/41733
Inventor 山田洋三后藤敏之
Owner MITSUBISHI GAS CHEM CO INC
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