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A cesium vanadate infrared frequency doubling crystal material and its preparation and application

A technology of frequency-doubling crystals and crystal materials, which is applied in the directions of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems that it is difficult to meet the application requirements of infrared second-order nonlinear optical crystals, and the light transmission range is narrow. Large-scale industrial production, good thermal stability, and mild conditions

Active Publication Date: 2021-06-04
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The patented crystal material has high transparency, but its light transmission range is narrow, which is difficult to meet the application requirements of infrared second-order nonlinear optical crystals

Method used

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  • A cesium vanadate infrared frequency doubling crystal material and its preparation and application
  • A cesium vanadate infrared frequency doubling crystal material and its preparation and application
  • A cesium vanadate infrared frequency doubling crystal material and its preparation and application

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Experimental program
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Effect test

Embodiment 1

[0039] Preparation of 1#~8# samples

[0040]Mix cesium source, vanadium source, mineralizer and water into raw materials according to a certain ratio, seal in a polytetrafluoroethylene-lined hydrothermal reaction kettle, heat up to the crystallization temperature, and after a period of constant temperature, the system will be heated at a certain rate. Slowly lower the temperature to room temperature, filter and wash to obtain the orange-yellow block Cs 2 V 4 o 11 crystals.

[0041] The relationship between the types and proportions of raw materials in the initial mixture, crystallization temperature, crystallization time and sample number is shown in Table 1.

[0042] Table 1 Correspondence between samples, raw materials and synthesis conditions

[0043]

[0044]

[0045] Crystal structure analysis of samples 1#~8#

[0046] The structures of samples 1# to 8# were analyzed by single crystal X-ray diffraction and powder X-ray diffraction.

[0047] The single crystal ...

Embodiment 2

[0077] Adopt the preparation method similar to embodiment 1, difference is:

[0078] (1) The cesium source that adopts is cesium hydroxide, and the vanadium source that adopts is ammonium metavanadate, and the mineralizer sodium bromate that adopts, wherein, the cesium element, vanadium element, mineralizer, hydrofluoric acid in initial mixture The mol ratio with water is Cs:V:sodium bromate:HF:water=2:1:0.5:0.3:50;

[0079] (2) The adopted crystallization temperature is 210° C., and the crystallization time is 60 hours.

[0080] After detection, the prepared compound Cs 2 V 4 o 11The crystal has a great frequency doubling effect. Under 1064nm wavelength laser irradiation, the frequency doubling signal strength is 12 times that of KDP crystal; under 2.10μm wavelength laser irradiation, the frequency doubling signal strength is AgGaS 2 2.2 times of the crystal.

Embodiment 3

[0082] Adopt the preparation method similar to embodiment 1, difference is:

[0083] (1) The cesium source adopted is cesium fluoride, the vanadium source adopted is vanadium powder, and the mineralizer potassium bromate adopted, wherein, the moles of cesium element, vanadium element, mineralizer, hydrofluoric acid and water in the initial mixture The ratio is Cs:V:sodium bromate:HF:water=2:0.8:0.2:0.5:50;

[0084] (2) The adopted crystallization temperature is 210° C., and the crystallization time is 90 hours.

[0085] After detection, the prepared compound Cs 2 V 4 o 11 The crystal has a great frequency doubling effect. Under 1064nm wavelength laser irradiation, the frequency doubling signal strength is 12 times that of KDP crystal; under 2.10μm wavelength laser irradiation, the frequency doubling signal strength is AgGaS 2 2.2 times of the crystal.

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Abstract

The invention relates to a cesium vanadate infrared frequency-doubling crystal material and its preparation and application. The chemical formula of the crystal material is Cs 2 V 4 o 11 , belonging to the orthorhombic crystal system, the space group is Pca2 1 , the unit cell parameter is α=β=γ=90°, Z=2, compared with the prior art, the cesium vanadate material of the present invention has larger frequency doubling effect, under 1064nm laser irradiation, powder frequency doubling intensity about KH 2 PO 4 (KDP) crystal 12 times; under 2.10μm laser irradiation, the powder frequency doubling effect intensity is about AgGaS 2 2.2 times of the crystal. The laser damage threshold measured at a wavelength of 1064nm is the commercialized infrared second-order nonlinear optical crystal material AgGaS 2 24 times. In addition, the crystal material has a wide optical transmission range in the visible and infrared regions, and the complete transmission band is 0.33-14.80 μm. It has broad application prospects in the fields of laser frequency conversion, photoelectric modulation, and laser signal holographic storage.

Description

technical field [0001] The invention belongs to the technical field of optical crystal materials, and relates to a cesium vanadate infrared frequency doubling crystal material and its preparation and application. Background technique [0002] The typical feature of the second-order nonlinear optical crystal is the frequency doubling effect (SHG). It is an important photoelectric functional material and has important application prospects in the fields of laser frequency conversion, photoelectric modulation, and laser signal holographic storage. According to the light transmission band and scope of application, inorganic nonlinear optical crystal materials can be divided into nonlinear optical materials in the ultraviolet region, nonlinear optical materials in the visible region and nonlinear optical materials in the infrared region. Currently commercialized nonlinear optical materials in the ultraviolet and visible regions include BBO (β-barium metaborate), LBO (lithium bora...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/30C30B7/10G02F1/355G02F1/37
CPCC30B7/10C30B29/30G02F1/3551G02F1/37
Inventor 张弛吴超林霖
Owner TONGJI UNIV
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