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A bismuth iodate selenate infrared frequency doubling crystal material and its preparation and application

A technology of bismuth iodate selenate and frequency-doubling crystal, which is applied in the directions of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems of low laser damage threshold and difficulty in meeting requirements, and achieve a large laser damage threshold and method. Simple, thermally stable results

Active Publication Date: 2020-10-02
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the crystal material of this patent has good performance in terms of crystallinity and light transmission range, its laser damage threshold is still relatively low, which is difficult to meet the demand

Method used

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  • A bismuth iodate selenate infrared frequency doubling crystal material and its preparation and application
  • A bismuth iodate selenate infrared frequency doubling crystal material and its preparation and application
  • A bismuth iodate selenate infrared frequency doubling crystal material and its preparation and application

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] (1) Preparation of 1#~6# samples

[0035]Bismuth source, iodine source, selenium source, cesium salt and water are mixed according to a certain ratio to form raw materials, sealed in a polytetrafluoroethylene-lined hydrothermal reaction kettle, heated to the crystallization temperature, and after a period of constant temperature, the system temperature Slowly lower to room temperature, filter and wash to obtain colorless block Bi 4 O(IO 3 ) 6 (SeO 4 ) crystals.

[0036] The relationship between the types and proportions of raw materials in the initial mixture, crystallization temperature, crystallization time and sample number is shown in Table 1.

[0037] Table 1 Correspondence between sample numbers and raw materials and synthesis conditions

[0038]

[0039]

[0040] (2) Crystal structure analysis of samples

[0041] The structures of samples 1# to 6# were analyzed by single crystal X-ray diffraction and powder X-ray diffraction.

[0042] Among them, the...

Embodiment 2

[0064] Compared with Example 1, most of them are the same, the difference is:

[0065] (1) The bismuth source used in this embodiment is bismuth nitrate, the iodine source used is iodic acid, the selenium source used is selenium dioxide, and the cesium salt used is cesium nitrate, wherein the bismuth element and iodine element in the initial mixture , the mol ratio of selenium element, cesium salt and water is Bi:I:Se: cesium salt: water=1:2:4:1:200;

[0066] (2) The crystallization temperature used in this embodiment is 180° C., and the crystallization time is 48 hours.

[0067] After testing, the prepared compound Bi 4 O(IO 3 ) 6 (SeO 4 ) crystal has a large frequency doubling effect and laser damage threshold, and the frequency doubling effect is KH 2 PO 4 (KDP) crystal 4.2 times, the laser damage threshold is AgGaS 2 51 times that of the crystal.

Embodiment 3

[0069] Adopt the preparation method similar to embodiment 1, difference is:

[0070] (1) The bismuth source that adopts is bismuth oxide, the iodine source that adopts is diiodine pentoxide, the selenium source that adopts is selenic acid, and the cesium salt that adopts is cesium chloride, and wherein, the bismuth element in the initial mixture, iodine element, The mol ratio of selenium element, cesium salt and water is Bi:I:Se: cesium salt: water=1:2:2:1:400;

[0071] (2) The adopted crystallization temperature is 210° C., and the crystallization time is 24 hours.

[0072] After testing, the prepared compound Bi 4 O(IO 3 ) 6 (SeO 4 ) crystal has a large frequency doubling effect and laser damage threshold, and the frequency doubling effect is KH 2 PO 4 (KDP) crystal 4.2 times, the laser damage threshold is AgGaS 2 51 times that of the crystal.

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Abstract

The invention relates to a bismuth iodate selenate infrared frequency-doubling crystal material as well as preparation and application thereof. The crystal material has a chemical formula of Bi4O(IO3)6(SEO4), can be prepared by a hydrothermal method, and can be used in a laser frequency converter. Compared with existing materials, the bismuth iodate selenate crystal material prepared by the invention has a strong frequency-doubling effect and a large laser damage threshold; under irradiation of 1064 nm laser, the frequency-doubling effect is 4.2 times that of a commercialized material KH2PO4 (KDP) crystal, and the laser damage threshold is 51 times that of the commercialized material AgGaS 2 crystal; in addition, the crystal material has a relatively wide transmission range in visible light and infrared regions, has an optical transmission wave band of 0.36-11.84 mum, and has a wide application prospect in the fields of laser frequency conversion, photoelectric modulation, laser signalholographic storage and the like.

Description

technical field [0001] The invention belongs to the technical field of optical crystal materials, and relates to a bismuth iodate selenate infrared frequency doubling crystal material. Background technique [0002] The typical feature of the second-order nonlinear optical crystal is the frequency doubling effect (SHG). It is an important photoelectric functional material and has important application prospects in the fields of laser frequency conversion, photoelectric modulation, and laser signal holographic storage. According to the light transmission band and scope of application, inorganic nonlinear optical crystal materials can be divided into nonlinear optical materials in the ultraviolet region, nonlinear optical materials in the visible region and nonlinear optical materials in the infrared region. Currently commercialized nonlinear optical materials in the ultraviolet and visible regions include BBO (β-barium metaborate), LBO (lithium borate), KDP (potassium dihydrog...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/46C30B7/10
Inventor 张弛王天佑吴超
Owner TONGJI UNIV
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