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A method for preparing graphene high-temperature electrothermal film based on lig method

A graphene and electric heating film technology, applied in the field of preparing graphene high temperature electric heating film, can solve the problems affecting the use and promotion of graphene electric heating film, the amplification of graphene defects, the power attenuation of electric heating film, etc., to achieve excellent performance, ensure stability, very flexible effect

Active Publication Date: 2021-06-04
安徽宇航派蒙健康科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the operating temperature of CVD graphene electrothermal film is generally below 170 degrees. After exceeding this temperature, the power of the electrothermal film will be seriously attenuated, and the graphene defects will be severely enlarged, and eventually it will be damaged.
[0006] To sum up, the current graphene electric heating film cannot be used at high temperature due to the heating material itself, which seriously affects the promotion of the use of graphene electric heating film in the field of high temperature electric heating

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] 1) Coat thermoplastic PI prepolymer (polyamic acid) on the surface of polyimide insulating film with a thickness of 50 microns, and dry to form a semi-cured polyamic acid film. The drying temperature is 150°C for 10 minutes;

[0043] 2) One side of the semi-cured polyamic acid film obtained in 1) was subjected to high-temperature lamination (imidization) with copper foil at a lamination temperature of 350°C for 1 h and a pressure of 5 MPa to obtain a PI-copper electrode base material;

[0044]3) On the surface of commercial PI (thickness 10 microns), pre-coat PI prepolymer and dry to form a semi-cured polyamic acid film. The drying temperature is 150 ° C for 10 minutes to form a PI-polyamic acid film material;

[0045] 4) Open holes locally on the PI-polyamic acid membrane material, and then press it with the PI-copper electrode assembly formed in 2), and complete the imidization treatment. The pressing temperature is 350°C and the time is 1h , the pressure is 5 MPa. ...

Embodiment 2

[0050] 1) On the surface of copper foil, apply thermoplastic PI prepolymer (polyamic acid) and dry to form a semi-cured polyamic acid film. The drying temperature is 150°C for 10 minutes;

[0051] 2) 1) PI insulating base material with a thickness of 50 microns was subjected to high-temperature lamination (imidization), the lamination temperature was 350 ° C, the time was 1 h, and the pressure was 5 MPa to obtain the PI-copper electrode base material;

[0052] 3) On the surface of the PI-copper electrode substrate, pre-coat PI prepolymer and dry to form a semi-cured polyamic acid film. The drying temperature is 150°C for 10 minutes to form a PI-polyamic acid film material. During this process , carry out local protection on the copper foil electrode terminal area to ensure that the surface terminal area does not cover the PI prepolymer;

[0053] 4) Complete the imidization treatment on the polyamic acid film formed in 3), the heat treatment temperature is 350°C, and the time i...

Embodiment 3

[0058] 1) On the surface of the 50 micron thick adhesive-free PI copper-clad film, a patterned copper electrode was prepared by wet etching to obtain a PI-copper electrode substrate;

[0059] 2) On the surface of commercial PI (thickness 10 microns), pre-coat PI prepolymer and dry to form a semi-cured polyamic acid film. The drying temperature is 150 ° C for 10 minutes to form a PI-polyamic acid film material;

[0060] 3) Open holes in the PI-polyamic acid membrane material, and then press it with the PI-copper electrode assembly formed in 2), and complete the imidization treatment. The pressing temperature is 350 ° C and the time is 1 h , the pressure is 5 MPa. Make sure to expose the local copper electrode terminal through the opening before pressing, so as to obtain the PI-copper electrode-PI (to-be-LIG layer) assembly.

[0061] 4) Use laser scanning equipment to induce the formation of a graphene heating layer pattern on the surface of PI, and finally form a PI-copper ele...

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Abstract

The present invention provides a kind of method based on LIG method to prepare graphene high-temperature electrothermal film, comprising: S1, form the complex layer of PI-copper electrode, copper electrode is all embedded or partially embedded in PI film; S2, again in PI A PI material layer is formed on the surface of the composite layer of the film-copper electrode, which constitutes a combination of PI-copper electrode-PI material layer (to be LIG layer); S3, the PI material layer is subjected to LIG treatment, and the laser is transmitted through to make it form graphene The heating layer pattern constitutes the structure of PI film-copper electrode composite layer-patterned graphene layer (LIG layer); and S4, encapsulating the protective film layer on the surface of the patterned graphene layer.

Description

technical field [0001] The invention relates to a method for preparing a graphene high-temperature electrothermal film by adopting a laser induction method. Background technique [0002] Graphene is an emerging strategic material developed in the 21st century. During the development of graphene industry, graphene electrothermal film has achieved rapid development, which is characterized by low manufacturing cost and relatively environmentally friendly production process. In particular, graphene electrothermal film can emit far-infrared rays that can achieve a good resonance absorption effect with the human body. At the same time, it has the advantages of easy surface heating and fast heating speed. It has become a hot research topic in the field of electrothermal film. [0003] The current mainstream use of graphene electric heating film, its main manufacturing methods are divided into the following categories: [0004] The first type is the electrothermal film made of grap...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05B3/14H05B3/34C01B32/184
CPCH05B3/145H05B3/34C01B32/184H05B2203/01H05B2203/017
Inventor 谭化兵潘智军
Owner 安徽宇航派蒙健康科技股份有限公司
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