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Metal oxide nanoparticle and processing method thereof, and QLED device

A nanoparticle and processing method technology, which is applied in the field of metal oxide nanoparticles and its processing method and QLED devices, can solve the problems affecting device life, device preparation repeatability, etc., and achieve the effect of improving efficiency and life, improving efficiency and life

Active Publication Date: 2020-09-29
合肥福纳科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the problem of electron mobility, there have been many corresponding technologies optimized in the existing technology. Most of the technical solutions use surface modification to modify the solid film of metal oxide nanoparticles to change the contact with different film interfaces. ; This type of technical solution will cause the compactness of the solid-state film (electron transport layer) of the quantum dot light-emitting device, which in turn will affect the life of the device and the repeatability of device preparation

Method used

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  • Metal oxide nanoparticle and processing method thereof, and QLED device
  • Metal oxide nanoparticle and processing method thereof, and QLED device
  • Metal oxide nanoparticle and processing method thereof, and QLED device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] In this example, H 2 , ZnO nanoparticles, and KOH as an example to prepare a QLED, which specifically includes the following steps:

[0054] 1) Preparation of ZnO nanoparticles:

[0055] Take 0.5g of zinc acetate hydrate and disperse in 20ml of dimethyl sulfoxide to form a clear solution, take 0.3g of tetramethylammonium hydroxide and disperse in 30ml of ethanol solution; mix the two solutions together and stir for 30min Perform high-speed centrifugation to prepare ZnO solid nanoparticles, and then configure a certain concentration of ZnO nanoparticle solution (30mg / ml, solution: ethanol).

[0056] 2) Using H 2 Treatment of ZnO nanoparticles:

[0057] Get above-mentioned prepared ZnO nanoparticle solution 2ml (30mg / ml, solution: ethanol), under the protection of an inert atmosphere, pass into 1mol of H in the ZnO nanoparticle solution 2 , the access time is 30min.

[0058] 3) To H 2 Add KOH to the treated ZnO nanoparticles solution:

[0059] Take 0.1 mmol of KOH ...

Embodiment 2

[0064] In this example, O 2 , NiO nanoparticles, and ammonia water as an example to prepare a QLED, which specifically includes the following steps:

[0065] 1) Prepare a solution of NiO nanoparticles in a conventional manner:

[0066] 2) Use O 2 Treatment of NiO nanoparticles:

[0067] Take 2ml (30mg / ml, solution: ethanol) of the above-mentioned prepared NiO nanoparticle solution, and under the protection of an inert atmosphere, feed 0.5mol of O into the NiO nanoparticle solution. 2 , the access time is 5min.

[0068] 3) to O 2 Add ammonia solution to the treated NiO nanoparticle solution:

[0069] Take 0.1 mmol of ammonia solution and add it dropwise to the NiO nanoparticle solution in 2), and then stir evenly to form a clear solution for later use.

[0070] 4) Add 30ml of ethyl butyrate to the above solution 3), carry out centrifugation and precipitate, pour off the supernatant, and then disperse the precipitate in 2ml of ethanol for later use.

[0071] 5) Preparatio...

Embodiment 3

[0073] In this example, H 2 S, W 2 o 3 Taking nanoparticles and ammonia water as an example to prepare a QLED, it specifically includes the following steps:

[0074] 1) Prepare W in a conventional manner 2 o 3 Solution of nanoparticles:

[0075] 2) Using H 2 S vs. W 2 o 3 Nanoparticles for processing:

[0076] Take the W prepared above 2 o 3 Nanoparticle solution 2ml (30mg / ml, solution: ethanol), under inert atmosphere protection, to W 2 o 3 Add 1 mol of H to the nanoparticle solution 2 S, the access time is 90min.

[0077] 3) To H 2 W after S treatment 2 o 3 Add ammonia solution to nanoparticle solution:

[0078] Get 0.1mmol of ammonia solution and add dropwise to the W in 2) 2 o 3 Nanoparticle solution, then stirred evenly to form a clear solution for later use.

[0079] 4) Add 30ml of ethyl butyrate to the above solution 3), carry out centrifugation and precipitate, pour off the supernatant, and then disperse the precipitate in 2ml of ethanol for later u...

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Abstract

The invention provides a metal oxide nanoparticle and a processing method thereof, and a QLED device. The processing method comprises the following steps that gas is introduced into solution of metaloxide nanoparticles for reaction, and the gas can react with the metal oxide nanoparticles and reduce intrinsic defects on a surface of the metal oxide nanoparticles. The method is advantaged in thatafter oxygen vacancies on the surfaces of the metal oxide nanoparticles are filled with gas, electron mobility of the metal oxide nanoparticles can be effectively reduced, and the charge transmissionperformance of a metal oxide nanoparticle solid film can be effectively improved, so efficiency of the quantum dot light-emitting diode is improved, and the service life of the quantum dot light-emitting diode is prolonged.

Description

technical field [0001] The invention relates to the technical field of QLED device preparation, in particular, to a metal oxide nanoparticle, a processing method thereof, and a QLED device. Background technique [0002] Quantum dot display technology has attracted attention as the next generation of new display technology, mainly because quantum dots have superior characteristics such as narrow emission spectrum, adjustable color, high photochemical stability, and long fluorescence lifetime; in recent years, quantum dot display The technology is steadily advancing towards the stage of commercialization, among which the photoinduced film has entered the mature stage of commercialization. However, the real pursuit of the quantum dot technology industry is still the electro-self-driven display technology. The quantum dot electroluminescent diode (QLED) Compared with the industrialized organic light-emitting diode (OLED), it has the characteristics of higher efficiency, color pu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/50B82Y40/00
CPCB82Y40/00H10K71/12H10K50/115H10K50/18H10K50/16
Inventor 翁兴焕汪鹏生乔之勇
Owner 合肥福纳科技有限公司
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