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Superlattice very long wave infrared detector structure

An infrared detector and superlattice technology, which is applied in semiconductor devices, electrical components, circuits, etc., can solve the problems such as the mismatch of the energy band of the superlattice of the opening voltage, limiting the comprehensive detection rate of the detector, and weakening the working ability of the detector. , to achieve the effects of flat I-V and RA-V characteristic response, suppression of dark current, and good transport performance

Pending Publication Date: 2020-09-25
NANJING UNIV
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Problems solved by technology

The problem of too high turn-on voltage comes from factors such as the mismatch of superlattice energy bands in each region of the detector.
These two problems limit the comprehensive detection rate of the detector, reduce the working temperature of the detector, and greatly weaken the working ability of the detector.

Method used

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  • Superlattice very long wave infrared detector structure
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Embodiment Construction

[0047] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0048] figure 1 It is a structural diagram of an infrared detector proposed according to the present invention. On a P-type GaSb substrate 100, a P-type GaSb buffer layer 200 is sequentially grown by molecular beam epitaxy (MBE), and a P-type doped InAs / GaSb very long-wave superlattice material Absorption layer P region 300, P-type segmented doping InAs / GaSb / AlSb / GaSb medium-long-wave superlattice material barrier layer B region 400, P-type doping contact layer p-region 500, P-type doping GaSb material capping layer 600. In addition to the above-mentioned superlattice material, a passivation layer material 900 deposited over the structure, as well as an upper electrode 700 and a lower electrode 800 are also included.

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Abstract

A very long wave infrared detector structure based on antimonide superlattices comprises the following structures from bottom to top: a substrate, a buffer layer, a very long wave band absorption layer, a medium long wave band barrier layer, a very long wave band ohmic contact layer and a top cover layer. The buffer layer is arranged on the substrate in an epitaxial manner. The antimonide superlattice very long wave infrared detector provided by the invention has good carrier transport performance. According to the invention, homotype junctions and segmented doping are introduced, and the superlattice structure, the doping concentration and the thickness of each region are regulated and controlled to obtain the infrared detector structure with high comprehensive detection rate.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a structure of a superlattice very long wave infrared detector, in particular to a structure of a very long wave infrared detector based on an antimonide superlattice. The energy structure of the device is precisely regulated by methods including superlattice structure adjustment, region thickness control, and segmental doping. Background technique [0002] Objects at different temperatures have different infrared radiation spectra and infrared characteristics due to black body radiation, so infrared detectors with different bands can detect and respond to identify different targets. Among them, the very long wave corresponds to the 12-30μm band. Long wave and very long wave infrared imaging can detect objects in dark and low temperature environments. Even in the presence of smoke and dust, no visible light source is required, and it can be used around t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/103H01L31/11
CPCH01L31/03529H01L31/035263H01L31/1035H01L31/11
Inventor 施毅岳壮豪牛智川王国伟徐应强蒋洞微常发冉李勇王军转郑有炓
Owner NANJING UNIV
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