Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Copper etching solution with long etching life

A copper etching and etching technology, applied in the field of electronic chemicals, can solve the problems of unstable hydrogen peroxide, easy decomposition, and increase the cost of the etching process, and achieve the effect of stabilizing the etching rate, prolonging the service life, and maintaining stability

Inactive Publication Date: 2020-09-11
湖北兴福电子材料股份有限公司
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the most commonly used copper etching solution is generally composed of hydrogen peroxide, inorganic acid or organic acid, additives and other components. The biggest defect of this type of copper etching solution is that hydrogen peroxide is unstable and easy to decompose, and the existence of copper ions will also promote the violent decomposition of hydrogen peroxide. , greatly reducing the stability and service life of the etching solution, affecting the quality of the etching process and increasing the cost of the etching process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Copper etching solution with long etching life

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Embodiment 1 provides the copper etchant of high etching rate and high stability, specifically:

[0029] The copper etching solution is composed of hydrogen peroxide, citric acid, sodium persulfate, 2,2-bipyridine, sodium malonate, imidazole and deionized water.

[0030] Wherein, the massfraction of hydrogen peroxide is 9%; The massfraction of citric acid is 6%; The massfraction of sodium persulfate is 1%; The massfraction of 2,2-bipyridine is 0.8%; The massfraction of sodium malonate is 4%; the mass fraction of imidazole is 3%, and the balance is deionized water.

[0031] Heat the above-prepared copper etching solution to 35°C, conduct an etching experiment on metallic copper on a glass substrate, record the time required for a certain thickness of copper to be etched away, and calculate the etching rate. At the same time, gradually add copper powder to the etching solution to simulate the etching process, and then test the etching rate of the etching solution on the ...

Embodiment 2

[0033] Embodiment 2 provides the copper etchant of high etching rate and high stability, specifically:

[0034] The copper etching solution is composed of hydrogen peroxide, citric acid, sodium persulfate, 2,2-bipyridyl, sodium formate, imidazole and deionized water.

[0035] Wherein, the mass fraction of hydrogen peroxide is 9%; the mass fraction of citric acid is 6%; the mass fraction of sodium persulfate is 1%; the mass fraction of 2,2-bipyridine is 0.8%; the mass fraction of sodium formate is 4%; The mass fraction of imidazole is 3%, and the balance is deionized water.

[0036] Heat the above-prepared copper etching solution to 35°C, conduct an etching experiment on metallic copper on a glass substrate, record the time required for a certain thickness of copper to be etched away, and calculate the etching rate. At the same time, gradually add copper powder to the etching solution to simulate the etching process, and then test the etching rate of the etching solution on th...

Embodiment 3

[0038] Embodiment 3 provides the copper etchant of high etching rate and high stability, specifically:

[0039] The copper etching solution is composed of hydrogen peroxide, citric acid, sodium persulfate, 2,2-bipyridyl, ammonium formate, imidazole and deionized water.

[0040] Wherein, the mass fraction of hydrogen peroxide is 9%; the mass fraction of citric acid is 6%; the mass fraction of sodium persulfate is 1%; the mass fraction of 2,2-bipyridine is 0.8%; the mass fraction of ammonium formate is 4% ; The mass fraction of imidazole is 3%, and the balance is deionized water.

[0041] Heat the above-prepared copper etching solution to 35°C, conduct an etching experiment on metallic copper on a glass substrate, record the time required for a certain thickness of copper to be etched away, and calculate the etching rate. At the same time, gradually add copper powder to the etching solution to simulate the etching process, and then test the etching rate of the etching solution ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
quality scoreaaaaaaaaaa
quality scoreaaaaaaaaaa
quality scoreaaaaaaaaaa
Login to View More

Abstract

The invention relates to a copper etching solution with high stability and long etching life. The etching solution is composed of hydrogen peroxide, organic acid, a secondary oxidant, chelating agentsand a pH regulator. In the etching solution, the synergistic effect of the hydrogen peroxide and the secondary oxidant overcomes the defects of low etching rate, too fast oxidant consumption, short etching life and the like; citric acid and other organic acid can promote the dissolution process of copper oxide in the etching solution, and meanwhile, the organic acid can also be used as a pH buffer agent to keep the pH of the etching solution changing in a small range and improve the stability; and a variety of chelating agents are combined for use, different coordination atoms are fully and quickly combined with divalent copper ions to generate a more stable metal chelate, the copper ions are prevented from promoting the decomposition of the hydrogen peroxide, and the service life of thecopper etching solution is prolonged. The copper etching solution provided by the invention can keep stable and uniform in a long etching time, the service life of the etching solution is prolonged, and the etching cost is reduced.

Description

technical field [0001] The invention relates to the technical field of electronic chemicals in the liquid crystal display thin film transistor industry, in particular to a copper etching solution with high stability and long etching life and its metal etching as electronic chemicals in the panel industry. Background technique [0002] In the panel industry, etching is an indispensable process, and wet etching has been widely used for a long time because of its advantages such as fast etching speed, high selectivity, and simple process. Wet etching is a process in which the target material is etched and removed through a chemical reaction between the target material and the etchant. In recent years, the scale of the panel industry has continued to expand, and the update frequency has continued to accelerate. In order to adapt to the constantly updated display manufacturing technology, the metal wiring in the display has gradually changed from aluminum wires to those with lowe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/18
CPCC23F1/18
Inventor 李少平钟昌东郝晓斌贺兆波张演哲张庭蔡步林万杨阳王书萍冯凯尹印李鑫景继磊
Owner 湖北兴福电子材料股份有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com