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AlGaAs/GaAs high-electron-mobility transistor of multi-channel insulated fin-type gate composite trench gate and preparation method thereof

A high electron mobility, multi-channel technology, applied in the field of AlGaAs/GaAs high electron mobility transistors and its preparation, can solve problems such as gate leakage, and achieve small on-state resistance, reduced resistance, and high current drive capability Effect

Active Publication Date: 2020-07-17
SHANGHAI SPACEFLIGHT INST OF TT&C & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the gate control capability of the existing fin structure devices needs to be further improved, and there is also the problem of gate leakage due to the introduction of the fin side gate structure

Method used

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  • AlGaAs/GaAs high-electron-mobility transistor of multi-channel insulated fin-type gate composite trench gate and preparation method thereof
  • AlGaAs/GaAs high-electron-mobility transistor of multi-channel insulated fin-type gate composite trench gate and preparation method thereof
  • AlGaAs/GaAs high-electron-mobility transistor of multi-channel insulated fin-type gate composite trench gate and preparation method thereof

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Experimental program
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Embodiment 1

[0052] see Figure 1 to Figure 3 As shown, will figure 1 The A-A' direction in is defined as the end face of the high electron mobility transistor, and the BB' direction is defined as the side surface of the high electron mobility transistor. This embodiment provides a multi-channel insulating fin gate compound groove gate structure. AlGaAs / GaAs high electron mobility transistor, including GaAs or germanium substrate 1, several layers of AlGaAs / GaAs heterojunction 2, GaAs cap layer 3, SiN passivation layer 4, source electrode 5, drain electrode 6 from bottom to top and the gate electrode 7, the AlGaAs / GaAs heterojunction 2 includes a GaAs layer 21 and an AlGaAs barrier layer 22, and the GaAs layer 21 is close to the GaAs or germanium substrate 1, and the source electrode 5 and the drain electrode 6 are located on both sides of the SiN passivation layer 4, respectively. On the GaAs cap layer 3 on the side, the gate electrode 7 is located between the source electrode 5 and the ...

Embodiment 2

[0061] see Figure 4 to Figure 14 As shown, this embodiment also provides a method for preparing an AlGaAs / GaAs high electron mobility transistor with a multi-channel insulated fin gate composite groove gate structure, including the following steps:

[0062] S1: see Figure 5 As shown, a GaAs or germanium substrate 1 is provided first, and then a GaAs layer 21 and an AlGaAs barrier layer 22 are sequentially grown on the GaAs or germanium substrate 1 by MOCVD process to form the first layer of AlGaAs / GaAs heterojunction 2, Wherein, the thickness of the AlGaAs barrier layer 22 is 15-25 nm, and the Al component in the AlGaAs barrier layer 22 is 25-35%;

[0063] S2: see Figure 6 As shown, step S1 is repeated several times on the first layer of AlGaAs / GaAs heterojunction 2 to obtain several layers of AlGaAs / GaAs heterojunction 2 to form a multi-channel structure, wherein the thickness of the AlGaAs barrier layer 22 is 15- 25nm, the Al composition in the AlGaAs barrier layer 22 ...

Embodiment 3

[0080] This embodiment provides a method for preparing an AlGaAs / GaAs high electron mobility transistor with a multi-channel insulated fin gate composite groove gate structure, which specifically includes the following steps:

[0081] Step 1. Epitaxial material growth.

[0082] 1.1) On the germanium substrate, the intrinsic GaAs layer is grown by MOCVD process;

[0083] 1.2) On the intrinsic GaAs layer, grow a 15nm-thick AlGaAs barrier layer, wherein the Al composition is 35%, and the doping concentration is 4×10 17 cm -3 , forming a 2DEG at the contact position between the intrinsic GaAs layer and the AlGaAs barrier layer;

[0084] 1.3) growing a second intrinsic GaAs layer on a 15nm thick AlGaAs barrier layer;

[0085] 1.4) A second 15nm thick AlGaAs barrier layer is grown on the second intrinsic GaAs layer, wherein the Al composition is 35%, and the doping concentration is 4×10 17 cm -3 , forming a heterojunction material structure with double channels.

[0086] 1.5) ...

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Abstract

The invention discloses an AlGaAs / GaAs high-electron-mobility transistor of a multi-channel insulated fin-type gate composite trench gate. The AlGaAs / GaAs high-electron-mobility transistor sequentially comprises a GaAs or germanium substrate, a plurality of layers of AlGaAs / GaAs heterojunctions, a GaAs cap layer, a SiN passivation layer, a source electrode, a drain electrode and a gate electrode from bottom to top, wherein the gate electrode comprises a fin gate and a trench gate, and the distance between the boundary of an etching region of the trench gate and the boundary of a top gate region of the corresponding fin gate is less than 100nm; and insulating dielectric layers are further arranged between the gate electrode and the tops and the two side walls of the multiple layers of AlGaAs / GaAs heterojunctions. A three-dimensional fin gate and a concave trench gate structure are adopted at the same time, so that the gate controls a channel from the upper end; a three-dimensional fin gate electrode can control channel electrons from the side surface due to the gate width within 100nm, so that the gate control capability is obviously enhanced, and the transconductance and gain capability of a device are improved; and meanwhile, the insulating dielectric layers are introduced, so that the leakage current introduced by fin structure etching and trench gate etching can be effectively reduced, the static power consumption of the device is reduced, and the breakdown voltage of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to an AlGaAs / GaAs high electron mobility transistor with multi-channel insulating fin gate and composite groove gate and a preparation method thereof. Background technique [0002] High electron mobility transistors (HEMTs) are recognized as one of the most promising high-speed electronic devices. Because of its characteristics of ultra-high speed, low power consumption, and low noise (especially at low temperature), it can meet the needs of ultra-high-speed computers, signal processing, satellite communications, etc., and thus has been widely valued. As a new generation of microwave and millimeter wave devices, high electron mobility transistors (HEMTs) show unparalleled advantages in terms of frequency, gain and efficiency. GaAs / Al x Ga 1-x As material is the material system with the earliest development, the widest application and the most research. Since ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/423H01L21/335
CPCH01L29/7783H01L29/4236H01L29/66462Y02P70/50
Inventor 化宁王真昊沈亚飞王佳章泉源杜祥裕王茂森高翔姚崇斌黄硕麻仕豪
Owner SHANGHAI SPACEFLIGHT INST OF TT&C & TELECOMM
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