Heterogeneous metal stacked grid strained silicon-germanium on insulator p-channel metal oxide semiconductor field effect tube (SSGOI pMOSFET) device structure

Abstract

The invention discloses a heterogeneous metal stacked grid strained silicon-germanium on insulator p-channel metal oxide semiconductor field effect tube (SSGOI pMOSFET) device structure, which comprises a heterogeneous metal stacked grid structure, a grid insulation layer, an intrinsic or n-doped strained Si channel layer, a strained Si1-xGex layer of which an intrinsic or n-doped component is changed gradually, an n-doped relaxation Si1-yGey layer, a stepped oxygen buried layer and an n-doped substrate part sequentially from top to bottom, wherein the n-doped substrate part consists of four parts, namely an n<+>-doped relaxation Si1-yGey layer, an n<->-doped relaxation Si1-yGey buffer layer, an n-doped relaxation SiGe gradient layer and an n<->-doped monocrystal Si(100) substrate. The device has a simple structure, can be totally compatible with the conventional Si silicon on insulator (SOI) process, is integrated with the advantages of grid engineering, strain engineering and substrate engineering, and makes a complementary metal-oxide-semiconductor structure process simply integrated.

Description

technical field [0001] The invention relates to a semiconductor MOSFET device structure in the field of microelectronics, in particular to a heterogeneous metal stack gate SSGOI pMOSFET device structure. Background technique [0002] With the continuous reduction of the characteristic length of modern semiconductor devices, their development is more and more restricted by physical limits, and the demand for high-speed and high-performance devices is becoming more and more intense. At this time, improving carrier mobility has become an effective strategy. means. At present, many obstacles are encountered in reducing the feature size of traditional silicon processes, and various secondary physical effects continue to appear. In order to continue the prediction of Moore's Law, the improvement of device structure and the introduction of new materials may play an important role in promoting the improvement of device characteristics, so the design and research of new materials an...

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Problems solved by technology

At present, many obstacles have been encountered in reducing the feature size of traditional silicon processes, and various secondary physical effects are constantly emerging.

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