Self-powered perovskite photoelectric detector and preparation method thereof

A photodetector, perovskite technology, applied in photovoltaic power generation, electric solid-state devices, semiconductor/solid-state device manufacturing, etc. It can reduce the non-radiative recombination rate and dark current density, facilitate efficient transmission, reduce the cost of devices and the complexity of the production process.

Inactive Publication Date: 2020-07-10
HUAZHONG UNIV OF SCI & TECH
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Problems solved by technology

However, this type of device generally uses an electron transport layer (TiO 2 , PCBM) or hole transport layer (Spiro-OMeTAD, PTAA, P3HT), which greatly increases the production cost of the device and limits its commercial application
In addition, the traditional all-inorganic perovskite thin films are mostly prepared based on the solution method, and there are disadvantages such as difficulty in the synthesis of inorganic perovskite materials, high density of defect states in the thin film, and poor film-forming properties, which are not conducive to the rapid transfer of carriers. , and the solution process itself is not conducive to the efficient deposition of perovskite thin film arrays

Method used

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  • Self-powered perovskite photoelectric detector and preparation method thereof
  • Self-powered perovskite photoelectric detector and preparation method thereof
  • Self-powered perovskite photoelectric detector and preparation method thereof

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preparation example Construction

[0034] see figure 2 and image 3 , the present invention also provides a kind of preparation method of self-powered perovskite photodetector, described preparation method comprises the following steps:

[0035] Step 1, providing a glass substrate with an ITO conductive layer, and cleaning the glass substrate.

[0036] Specifically, a glass substrate with an ITO conductive layer is provided, and the glass substrate is ultrasonically cleaned for 10 minutes to 20 minutes using cleaning agent, acetone, ethanol and deionized water in sequence; then, the glass substrate is cleaned with N 2 After the airflow dries the glass substrate, the glass substrate is treated with ultraviolet and ozone for 20 minutes to 30 minutes.

[0037] Step 2, preparing a high-quality photosensitive film on the ITO layer by using a continuous evaporation process.

[0038] Specifically, a photosensitive film is prepared by a continuous evaporation process on the glass substrate with an ITO conductive la...

Embodiment 1

[0046] The preparation method of a self-powered perovskite photodetector provided by the first embodiment of the present invention mainly includes the following steps:

[0047] S1, providing a glass substrate with an ITO conductive layer, and cleaning the glass substrate.

[0048] Specifically, a glass substrate with an ITO conductive layer is provided, and the glass substrate is ultrasonically cleaned for 15 min with cleaning agent, acetone, ethanol and deionized water in sequence, and then cleaned with N 2 Airflow blows dry described glass substrate, then carries out ultraviolet ozone treatment 25min to described glass substrate;

[0049] S2, using a continuous evaporation process to prepare a high-quality photosensitive film on the ITO conductive layer.

[0050] Specifically, a photosensitive film is prepared by a continuous evaporation process on the ITO conductive layer, and the photosensitive film is an inorganic CsPbIBr 2 Photosensitive thin film, which is obtained by...

Embodiment 2

[0057] The preparation method of a self-powered perovskite photodetector without a charge transport layer provided by the second embodiment of the present invention mainly includes the following steps:

[0058] B1, providing a glass substrate with an ITO conductive layer, and cleaning the glass substrate.

[0059] Specifically, a glass substrate with an ITO conductive layer was provided, and the glass substrate was ultrasonically cleaned for 20 min with cleaning agent, acetone, ethanol and deionized water in sequence, and then cleaned with N 2 Dry the glass substrate by air flow, and then carry out ultraviolet and ozone treatment on the glass substrate for 30min;

[0060] B2, using a continuous evaporation process to prepare a high-quality photosensitive film on the ITO conductive layer.

[0061] Specifically, a photosensitive film is prepared on a glass substrate with an ITO conductive layer by a continuous evaporation process, and the photosensitive film is an inorganic CsP...

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Abstract

The invention belongs to the related technical field of micro-nano manufacturing. The invention discloses a self-powered perovskite photoelectric detector and a preparation method thereof. The photoelectric detector comprises a glass substrate, a CsPbIBr2 photosensitive film, a PMMA modification layer and an Ag electrode layer. The glass substrate comprises a substrate body and an ITO conductive layer arranged on the substrate body; the CsPbIBr2 photosensitive film is arranged on the ITO conductive layer; the PMMA modification layer is arranged on the surface, far away from the ITO conductivelayer, of the CsPbIBr2 photosensitive film; and the Ag electrode layer is arranged on the surface, far away from the CsPbIBr2 photosensitive film, of the PMMA modification layer. Compared with other perovskite photoelectric detectors, the perovskite photoelectric detector is lower in production cost and process complexity; and the introduction of the PMMA modification layer is beneficial to further passivating the defects of the CsPbIBr2 photosensitive film, improving the carrier transmission rate and reducing the adverse non-radiative recombination loss, thereby improving the sensitivity andresponse rate of the photoelectric detector.

Description

technical field [0001] The invention belongs to the technical field related to micro-nano manufacturing, and more specifically relates to a self-powered perovskite photodetector and a preparation method thereof. Background technique [0002] Since the third scientific and technological revolution, microelectronics technology and related industries with semiconductor technology as the core have developed rapidly. It is of great strategic significance to improve life, promote industrial development, and improve national defense capabilities. [0003] At present, commercial photodetectors are mainly constructed based on traditional inorganic semiconductor materials such as Si, InGaAs, and GaN, which have defects such as large dark current and poor response to weak light. In addition, this type of device has high requirements on the purity of the semiconductor thin film, and the thin film is mostly prepared by molecular beam epitaxy and metal organic chemical vapor deposition, ...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46H01L51/44H01L51/48
CPCH10K71/00H10K85/00H10K30/10H10K30/80Y02E10/549
Inventor 廖广兰刘星月刘智勇孙博谭先华史铁林
Owner HUAZHONG UNIV OF SCI & TECH
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