A High Side Conductance Enhanced Power Switch Driving Circuit

Abstract

The invention discloses a high-side conductance enhanced power switch drive circuit, which belongs to the technical field of electronic circuits. The present invention uses a gate level shift circuit to convert a gate level shift control signal output by a logic circuit into a set of signals with opposite phases, and then passes through a gate drive structure composed of a master gate drive and a slave gate drive circuit. , to drive a conductance-enhanced power device. Using this gate drive method not only realizes the performance of the traditional single power switch drive circuit, but also makes full use of all the conductive carriers in the semiconductor, which solves the problem of insufficient drive capability of a single P-type power switch and single N-type power switch. The complexity of the switch drive circuit can effectively reduce the on-resistance value, improve the current drive capability, and simplify the design method under the same chip area.

Description

technical field [0001] The invention belongs to the technical field of electronic circuits, and in particular relates to a high-side conductance enhanced power switch driving circuit. Background technique [0002] The high-side power switch drive circuit is a kind of integrated power device, gate drive circuit and protection circuit in the same chip. It has the characteristics of small size, light weight, high power density and high reliability. are widely used in. The high-side gate drive circuit is a non-important circuit. Its function is to drive and control the on and off of the high-side power device, and maintain this state until the arrival of the next control signal. The gate drive circuit determines the Can make full use of power device performance. [0003] Traditional switching drive circuits based on high-side power devices usually use a single N-type power device or P-type power device as a high-side switch tube. Because the power devices used are limited by ...

AI Technical Summary

Problems solved by technology

Because the power devices used are limited by the existing process conditions, chip area and manufacturing cost, it is difficult to integrate N-type power devices and P-type power devices in the same chip and the same substrate.

[0004] In the existing switch driving circuit based on a single N-type device, since the source voltage of the N-type device is floating, when it is fully turned on, the source voltage will be close to the power supply voltage due to its low on-resistance characteristics; When the device is off, its source voltage is pulled down to ground, so in order to reduce the loss when the device is turned on, the drive circuit needs an additional boost circuit, such as a charge pump circuit or a bootstrap circuit, to generate a voltage higher than the chip supply voltage Voltage to complete the control of the switch, and an additional boost circuit will increase the cost and complexity of the circuit

[0005] However, for a switch drive circuit based on a single P-type device, due to the low mobility of holes, the on-resistance value per unit area is relatively large, so a device that occupies a larger chip area is required to reduce the output resistance; in the case of heavy load In this case, the loss on the P-type power device is serious, and it will cause the device to heat up or even burn out.

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