A kind of two-dimensional plzst antiferroelectric photonic crystal and its preparation method

Abstract

The invention belongs to the technical field of preparation of electric photon artificial metamaterials, and discloses a two-dimensional PLZST antiferroelectric photonic crystal and a preparation method. The preparation method comprises the following steps: firstly, preparing an SSO template, and then preparing the two-dimensional PLZST antiferroelectric photonic crystal based on the SSO template.The SSO template is prepared by adopting an ICP etching process, the structural parameter error is less than 10nm, the error between the structural parameter and the theoretical design parameter of the prepared two-dimensional PLZST photonic crystal is less than 5nm, and the structural parameter is almost the same as the preset value so that the actually measured optical parameter of the photoniccrystal is more accurate; the PLZST antiferroelectric film is adopted as the dielectric material, PLZST has a remarkable phase change characteristic and an electro-optical effect, specifically, the PLZST antiferroelectric material has the dual effects of lattice constant mutation and dielectric constant shock at a phase change point under the action of the electric field, and the photonic crystalwith the adjustable photonic band gap width is achieved.

Description

Technical field [0001] The present invention pertains to artificial ultra material prepared photoelectron technology, particularly, to a two-dimensional photoelectron PLZST antiferroelectric crystal and its preparation method. Background technique [0002] Currently, the closest prior art is: the photonic crystal is a synthetic metamaterial, the propagation of light has a certain effect control and manipulation, has been widely used in optical communications, optical sensors, integrated optoelectronics fields. [0003] Currently, in order to be compatible with the semiconductor manufacturing process and electronic materials, research on the photonic crystal silicon semiconductor material, mainly concentrated in the system. However, due to low electron mobility and breakdown field and other drawbacks of silicon semiconductor material, it is difficult to achieve tunable photonic bandgap width, the depth can not be regulated to produce the integrated optoelectronic devices. Direct c...

AI Technical Summary

Problems solved by technology

[0004] To sum up, the problems existing in the existing technology are: the photonic crystal structure parameters based on silicon semiconductor materials are precise, but the photonic crystal band gap cannot be adjusted, and it is difficult to be used in the manufacture of tunable optoelectronic integrated devices; Based on metal materials, the structural parameters of ceramic-based photonic crystals prepared by physical and chemical methods are uncontrollable, and the preparation process cannot achieve industrial standardization

[0005] Difficulty in solving the above technical problems: Because silicon is an indirect bandgap semiconductor, it has the disadvantages of low electron mobility and breakdown field strength. There is no significant change in the photonic band gap, which is a defect of the silicon semiconductor material itself

Therefore, silicon semiconductor materials cannot be used to prepare tunable photonic crystals

[0006] Inorganic non-metallic materials can be modified by doping, and show significant sudden changes in lattice constant and dielectric constant under the action of electric field, magnetic field, temperature field, etc., so they have remarkable adjustable characteristics; but photonic crystals are a kind of Artificial metamaterials, whose photoelectric properties are closely related to structural parameters, the structural parameters of inorganic non-metallic photonic crystals prepared by Sol-Gel method, magnetron sputtering method, pulsed laser deposition method, CVD method and other processes are completely uncontrollable. Photonic crystals have too many defects to be industrially produced

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