LED epitaxial growth method for improving radiation recombination efficiency

A technology of epitaxial growth and recombination efficiency, which is applied in the field of LED epitaxial growth to improve radiation recombination efficiency, can solve the problems of low quantum well growth quality and low quantum well radiation recombination efficiency, and achieves improved luminous efficiency, improved LED luminous efficiency, The effect of reducing dislocation density

Pending Publication Date: 2020-06-02
XIANGNENG HUALEI OPTOELECTRONICS
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The invention solves the problems of low quantum well growth quality and low quantum well radiation recombination efficiency existing in the existing LED epitaxial growth method by adopting a new multi-quantum well layer growth method, thereby improving the luminous efficiency of the LED

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • LED epitaxial growth method for improving radiation recombination efficiency
  • LED epitaxial growth method for improving radiation recombination efficiency
  • LED epitaxial growth method for improving radiation recombination efficiency

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] This embodiment adopts the LED epitaxial growth method for improving radiation recombination efficiency provided by the present invention, adopts MOCVD to grow GaN-based LED epitaxial wafers, and uses high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa) is used as the gallium source, trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the reaction pressure is between 70mbar and 900mbar. The specific growth method is as follows (for the epitaxial structure, please refer to figure 1 ):

[0043] An LED epitaxial growth method for improving radiation recombination efficiency, comprising: processing a substrate 1, growing a low-temperature buffer layer GaN2, growing an undoped GaN layer 3, g...

Embodiment 2

[0075] Comparative examples are provided below, that is, the growth method of the traditional LED epitaxial structure (for the epitaxial structure, please refer to figure 2 ).

[0076] Step 1: At a temperature of 1000-1100°C and a reaction chamber pressure of 100-300mbar, feed 100-130L / min of H 2 Under the conditions, process the sapphire substrate for 5-10 minutes.

[0077] Step 2: growing a low-temperature GaN buffer layer, and forming irregular small islands in the low-temperature GaN buffer layer 2 .

[0078] Specifically, the step 2 is further as follows:

[0079] At a temperature of 500-600°C and a reaction chamber pressure of 300-600mbar, 10000-20000sccm of NH is introduced 3 , 50-100sccm TMGa, 100-130L / min H 2 Under the condition of , growing the low-temperature GaN buffer layer 2 on the sapphire substrate 1, the thickness of the low-temperature GaN buffer layer 2 is 20-40nm;

[0080] At a temperature of 1000-1100°C and a reaction chamber pressure of 300-600mbar,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses an LED epitaxial growth method for improving radiation recombination efficiency. The method sequentially comprises the steps of processing a substrate, growing a low-temperature buffer layer GaN, growing an undoped GaN layer, growing a Si-doped N-type GaN layer, growing a multi-quantum well layer, growing an AlGaN electron blocking layer, growing a Mg-doped P-type GaN layerand cooling, wherein the step of growing the multi-quantum well layer sequentially comprises the sub-steps of growing an InGaN transition layer, growing an InGaN well layer, growing a doped gradientSiN layer, growing a doped gradient MgN layer, growing a GaN barrier layer doped with Mg in a linear gradient mode and growing an InAlN layer. According to the method, the problems of low quantum wellgrowth quality and low quantum well radiation recombination efficiency in the existing LED epitaxial growth method are solved, so that the luminous efficiency of the LED is improved.

Description

technical field [0001] The invention belongs to the technical field of LEDs, and in particular relates to an LED epitaxial growth method for improving radiation recombination efficiency. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic device that converts electrical energy into light energy. When the LED has current flowing, the electrons and holes in the LED recombine in its multiple quantum wells to emit monochromatic light. As a new type of high-efficiency, environmentally friendly and green solid-state lighting source, LED has the advantages of low voltage, low energy consumption, small size, light weight, long life, high reliability and rich colors. At present, the scale of domestic production of LEDs is gradually expanding, but LEDs still have the problem of low luminous efficiency, which affects the energy-saving effect of LEDs. [0003] The quality of LED epitaxial InGaN / GaN multi-quantum wells prepared...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/02H01L33/00H01L33/06H01L33/32C23C16/30C23C16/34
CPCH01L21/0242H01L21/02458H01L21/0254H01L21/02576H01L21/02579H01L21/0262H01L33/007H01L33/06H01L33/325C23C16/303C23C16/34C23C16/345Y02P70/50
Inventor 徐平吴奇峰胡耀武周孝维
Owner XIANGNENG HUALEI OPTOELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap