Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Amorphous carbon modified SiC nanowire continuous three-dimensional network structure wave-absorbing foam and preparation method thereof

A network structure and nanowire technology, applied in the field of wave-absorbing materials, can solve problems such as difficulty in forming a continuous structure, light weight and broadband need to be further improved, absorption performance lower than expected, etc., to protect integrity and enhance electromagnetic absorption performance and mechanical properties, to ensure the effect of structural reliability

Active Publication Date: 2020-05-12
XI AN JIAOTONG UNIV
View PDF14 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, since the current conventional practice is to prepare SiC / C composites by coating SiC nanowires with carbon, dispersing them, and then freeze-drying, the complex preparation process will inevitably cause damage and aggregation of SiC nanowires, which is difficult to obtain. Forms a truly continuous structure, resulting in lower-than-expected absorption properties
In addition, the addition of most existing carbon-based absorbers in the matrix is ​​still above 30wt%, the effective absorption band is still below 6GHz, and the performance of light weight and broadband needs to be further improved

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Amorphous carbon modified SiC nanowire continuous three-dimensional network structure wave-absorbing foam and preparation method thereof
  • Amorphous carbon modified SiC nanowire continuous three-dimensional network structure wave-absorbing foam and preparation method thereof
  • Amorphous carbon modified SiC nanowire continuous three-dimensional network structure wave-absorbing foam and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] The preparation method proposed by the first embodiment of the present invention, such as figure 1 Shown, described method preparation process is as follows:

[0037] Glucose was selected as the carbon source, distilled water was used as the solvent, and the two were uniformly mixed in a certain proportion to form a carbon source solution with a concentration of 1 wt%. The carbon source solution was dispersed into the continuous three-dimensional network structure of SiC nanowires by spraying to make the carbon source evenly Coat the surface of SiC nanowires and build more nodes to obtain a thin film constructed of SiC@carbon source, and dry it at a temperature of 40°C and a drying time of 2 hours; design the shape of the dried product and cut it out for stamping , followed by superimposing the film into a block for hot-pressing treatment, carbonization treatment in an oxygen-free inert atmosphere, the heat treatment temperature is 500 ° C, and the holding time is 5 hou...

Embodiment 2

[0041] Glucose was selected as the carbon source, distilled water was used as the solvent, and the two were uniformly mixed in a certain proportion to form a carbon source solution with a concentration of 1 wt%. The carbon source solution was dispersed into the continuous three-dimensional network structure of SiC nanowires by spraying to make the carbon source evenly Cover the surface of SiC nanowires and build more nodes to obtain a film constructed of SiC@carbon source, and dry it at a temperature of 70 ° C and a drying time of 1 h; shape the dried product and cut it out for stamping , followed by superimposing the film into a block for hot-pressing treatment, carbonization treatment in an oxygen-free inert atmosphere, the heat treatment temperature is 1000 ° C, and the holding time is 1 h, and the amorphous carbon-modified SiC nanowire continuous three-dimensional network structure absorbing foam is obtained.

Embodiment 3

[0043] Glucose was selected as the carbon source, distilled water was used as the solvent, and the two were evenly mixed in a certain proportion to form a carbon source solution with a concentration of 0.5 wt%. The carbon source solution was dispersed into the continuous three-dimensional network structure of SiC nanowires by spraying, so that the carbon source Uniformly coat the surface of SiC nanowires and build more nodes to obtain a film constructed of SiC@carbon source, and dry it at a temperature of 140°C and a drying time of 1 hour; shape the dried product and cut it Stamping, followed by superimposing the film into a block for hot-pressing treatment, carbonization treatment in an oxygen-free inert atmosphere, the heat treatment temperature is 1300 ° C, and the holding time is 1 h, and the amorphous carbon-modified SiC nanowire continuous three-dimensional network structure absorbing foam is obtained.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses amorphous carbon modified SiC nanowire continuous three-dimensional network structure wave-absorbing foam and a preparation method thereof. According to the method, a carbon source solution is dispersed into a SiC nanowire continuous three-dimensional network structure, and amorphous carbon layers on the surfaces of SiC nanowires is used as a binder among the SiC nanowires,thereby forming the continuous three-dimensional porous network structure foam; and the amorphous carbon layers in the foam are uniformly distributed on the SiC nanowires and are good in interface bonding with SiC. The preparation method is simple and feasible, has low requirements on equipment, and can realize mass production; the foam prepared by using the method is light in weight and wide inabsorption frequency band, and ensures the stability of the continuous three-dimensional structure of the SiC nanowires. When the thickness of a wave-absorbing layer is 3.0 mm, the foam, used as a wave-absorbing agent, realizes an effective absorption bandwidth of 10.1 GHz (7.9-18GHz), which covers the whole X and Ku wave bands; so the foam is expected to be popularized and used in industry.

Description

technical field [0001] The invention belongs to the field of wave-absorbing materials, and relates to an amorphous carbon-modified SiC nanowire continuous three-dimensional network structure wave-absorbing foam and a preparation method thereof. Background technique [0002] With the rapid development of modern information technology, electromagnetic wave interference pollution is becoming more and more serious, and electromagnetic wave absorbing materials are playing an increasingly important role in the fields of wearable smart electronics, national defense and security. Traditional electromagnetic wave absorbing materials usually add wave-absorbing particle fillers into the wave-transparent polymer matrix to make them have practical application value. These materials have high-efficiency electromagnetic wave absorption properties, but they are limited to specific frequency bands, which is an obvious disadvantage in the face of electromagnetic wave interference pollution in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/80C04B35/565C04B35/628C04B38/00C04B41/82H05K9/00
CPCC04B35/565C04B35/62873C04B38/0041C04B41/009C04B41/478C04B41/82H05K9/0081C04B2235/5244C04B2235/602C04B2235/656C04B2235/6567C04B2235/658C04B2235/94C04B2235/95C04B2235/5264C04B2235/526C04B35/806C04B41/4535
Inventor 王红洁蔡志新苏磊牛敏卢德
Owner XI AN JIAOTONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com