Preparation method of N-type passivation contact solar cell

Abstract

The invention discloses a preparation method of an N-type passivation contact solar cell. The method sequentially comprises the following steps: performing double-sided polishing on an N-type crystalline silicon substrate; sequentially growing a tunneling oxide layer and an intrinsic amorphous silicon layer on the back surface; doping the intrinsic amorphous silicon layer; depositing a silicon nitride film on the back surface; performing texturing and boron diffusion on the front surface; removing the front surface and a borosilicate glass layer wound and expanded to the back surface; preparation of a passivation anti-reflection on the front surface; silver paste printing on the back surface; silver-aluminum paste printing on the front surface; and sintering and like so that preparation ofthe N-type passivation contact solar cell is completed. The problem of electric leakage caused by adopting a phosphorus diffusion process in the conventional process is solved, the step of activatingthe back doping source by high-temperature annealing is omitted, damage to the silicon substrate is reduced, process steps are reduced, production cost is reduced, and the silicon nitride passivationfilm is prepared by plate-type PECVD (plasma enhanced chemical vapor deposition) equipment and thus poor appearance caused by texturing of a clamping groove mark position during front texturing is avoided.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to a preparation method of an N-type passivated contact solar cell. Background technique [0002] Solar cells are the basic devices that convert solar energy into electrical energy. With the continuous progress of solar cells, efficient cost reduction has become an important direction for the current industrialization of solar cells. High-efficiency structural design and improved manufacturing yield are the keys to achieve this goal. At present, in order to improve battery efficiency, a variety of battery structures have been developed, such as PERC, HIT, IBC, and TOPCon. Among them, TOPCon battery is a passivation contact battery. Its structure is to prepare an ultra-thin silicon oxide layer and high-doped Doped polysilicon layer, using the chemical passivation of silicon oxide and the field passivation of polysilicon layer can significantly reduce the recombination rate of mi...

AI Technical Summary

Problems solved by technology

The common method to prepare the n+ heavily doped polysilicon layer on the back surface is tubular high-temperature diffusion. This method cannot avoid spreading the dopant source to the front surface during diffusion, which will cause battery leakage and affect the efficiency and yield of the battery.

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