Mask plate, capacitor array, semiconductor device and preparation method thereof

Abstract

The invention provides a mask plate, a capacitor array, a semiconductor device and a preparation method thereof. A capacitor hole array and an annular groove which surrounds the capacitor hole array and is provided with a wavy side wall can be manufactured through a one-time exposure process; the operation window of the annular groove is large, the situation that etching is not in place can be avoided, and therefore the situation that redundant and small capacitor openings are formed in the boundary of the capacitor array can be prevented, and the reliability of a finally-manufactured device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a mask plate, a capacitor array, a semiconductor device and a preparation method thereof. Background technique [0002] Dynamic random access memory (Dynamic Random Access Memory, referred to as: DRAM) is a semiconductor storage device commonly used in computers. It is composed of many repeated storage units. Each storage unit usually includes a capacitor and a transistor. The gate of the transistor is connected to the word line, and the drain The pole is connected to the bit line, and the source is connected to the capacitor; the voltage signal on the word line can control the opening or closing of the transistor, and then read the data information stored in the capacitor through the bit line, or write the data information into the capacitor through the bit line stored in a capacitor. [0003] In the current DRAM manufacturing process, three masks with different patterns...

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Problems solved by technology

[0006] Additionally, please refer to Figure 2c At present, in order to make the capacitor in the DRAM increase or maintain a sufficiently high capacitance value, the height of the bottom electrode (bottom electrode) 130 in the capacitor is usually increased to increase the contact area between the bottom electrode and the capacitor dielectric layer, and at the same time The stability is also increased by adding a laterally continuous support layer (including the bottom support layer 111, the middle support layer 112 and the top support layer 113) of the electrode, but the lateral support layer will form an uneven boundary of the capacitor array, and the subsequent formation of the conductive contact plug In the plug (CT) 160 process, when the metal conductive material is filled into the contact hole to form the conductive contact plug 160, it is easy to cause cracks (crack) 103 on the sidewall of the contact hole on the periphery of the capacitor array, and the crack 103 may crack to On the uneven boundary of the capacitor array, the metal conductive material filled in the crack will cause a direct short circuit between the conductive contact plug 160 and the boundary of the capacitor array, which will affect the reliability of the DRAM

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