A kind of preparation method of silver gallium indium selenide/oxide film electrode

A technology of oxide thin film and oxide, which is applied in the field of solar cell materials to achieve the effects of uniform particles, improved battery performance, and low reaction temperature

Active Publication Date: 2022-02-08
HUBEI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is no report on making silver gallium indium selenide nanoparticles into thin film electrodes

Method used

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  • A kind of preparation method of silver gallium indium selenide/oxide film electrode
  • A kind of preparation method of silver gallium indium selenide/oxide film electrode
  • A kind of preparation method of silver gallium indium selenide/oxide film electrode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] (1) Preparation of TiO on ITO 2 Porous film (ITO / TiO 2 )

[0042] Screen-print titanium dioxide slurry (P25) on ITO with a thickness of about 9 μm, heat and calcinate in a muffle furnace at 500°C for 30 minutes to obtain TiO 2 Porous film (ITO / TiO 2 ).

[0043] (2) Synthesis of silver gallium indium selenide nanoparticles coated with oleylamine

[0044] Add 0.3mmol of silver acetate, 0.2mmol of gallium acetate, and 0.1mmol of indium acetate into a three-necked flask containing 10mL of oleylamine and 5mL of octadecene, heat to 130°C with nitrogen gas, and vacuumize for 30min. Infuse nitrogen gas to raise the temperature to 170°C, and dissolve 0.6mmol selenium powder in 2mL DPP, quickly inject into the above reaction solution, and react at 170°C for 10min. Remove heat source and rapidly cool to room temperature. Add an appropriate amount of cyclohexane to wash, precipitate and centrifuge with methanol, and then disperse the silver gallium indium selenide nanoparticl...

Embodiment 2

[0050] (1) Preparation of TiO on Ti sheet 2 Porous film (Ti / TiO 2 ), the method is the same as in Example 1 (1), except that the substrate is changed to a Ti sheet.

[0051] (2) Synthesis of silver gallium indium selenide nanoparticles coated with oleylamine

[0052]Add 0.3mmol of silver acetylacetonate, 0.225mmol of gallium acetylacetonate, and 0.075mmol of indium acetylacetonate into a three-necked flask containing 10mL of oleylamine and 5mL of octadecene, heat to 130°C with nitrogen gas, and vacuumize for 30min. Infuse nitrogen gas to raise the temperature to 180°C, and dissolve 0.6mmol selenium powder in 2mL DPP, quickly inject into the above reaction solution, and react at 180°C for 7min. Remove heat source and rapidly cool to room temperature. Add an appropriate amount of cyclohexane to wash, precipitate and centrifuge with methanol, and then disperse the silver gallium indium selenide nanoparticles in chloroform.

[0053] Steps (3)-(5) Referring to Example 1 (3)-(5)...

Embodiment 3

[0055] (1) Preparation of TiO on FTO 2 Porous film (FTO / TiO 2 ), the method is the same as in Example 1 (1), except that the substrate is changed into FTO.

[0056] (2) Synthesis of silver gallium indium selenide nanoparticles coated with oleylamine

[0057] Add 0.3mmol of silver acetate, 0.24mmol of gallium acetylacetonate, and 0.06mmol of indium acetate into a three-necked flask containing 10mL of oleylamine and 5mL of octadecene, heat to 130°C with nitrogen gas, and vacuumize for 30min. Infuse nitrogen gas to raise the temperature to 190°C, and dissolve 0.6mmol selenium powder in 2mL DPP, quickly inject into the above reaction solution, and react at 190°C for 5min. Remove heat source and rapidly cool to room temperature. Add an appropriate amount of cyclohexane to wash, precipitate and centrifuge with methanol, and then disperse the silver gallium indium selenide nanoparticles in chloroform. Its TEM image is shown in figure 1 , EDS diagram see figure 2 .

[0058] St...

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Abstract

The invention discloses a method for preparing a silver gallium indium selenide / oxide film electrode, comprising the following steps: (1) preparing a porous oxide film on a conductive substrate; (2) synthesizing oil-soluble silver gallium indium selenide nanoparticles; ( 3) Surface modification of oil-soluble silver gallium indium selenide nanoparticles to make mercaptopropionic acid-coated nanoparticles and then disperse in water to make dispersion liquid; (4) soak oxide porous film in water-soluble In the silver gallium indium selenide nanoparticle dispersion liquid, the silver gallium indium selenide nanoparticle is adsorbed into the oxide porous film; (5) washing and drying to obtain the silver gallium indium selenide / oxide thin film electrode. Beneficial effects of the present invention: the synthesis reaction temperature of silver gallium indium selenide nanoparticles is low, the time is short, energy consumption and time are saved, the prepared silver gallium indium selenide particles are uniform, small in size, and easy to be adsorbed into the oxide film after modification ; The silver gallium indium selenide / oxide electrode prepared by the present invention has adjustable optical and electrical properties and can be used to improve battery performance.

Description

technical field [0001] The invention belongs to the field of solar cell materials, and in particular relates to a method for preparing a silver gallium indium selenide / oxide thin film electrode. Background technique [0002] With the continuous consumption of fossil energy and the increasingly serious environmental problems caused by it, coupled with the continuous growth of human energy demand, the study of solar cells is of great significance and is imperative. [0003] Quantum dot-sensitized solar cells (QDSSCs) have high theoretical conversion efficiencies and have attracted extensive attention in recent years. As a photosensitizer, quantum dot semiconductors can absorb sunlight and generate photogenerated electrons. The ideal energy band of quantum dots should be close to the optimal bandgap (1.5eV) required by terrestrial photovoltaic utilization in order to better absorb solar energy. The energy band adjustment of quantum dots is an important measure to improve the c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/20H01G9/042H01G9/048
CPCH01G9/2027H01G9/2036H01G9/20Y02E10/542
Inventor 舒婷曾德福周亮朱晓明王诗吴诗李向华
Owner HUBEI UNIV OF SCI & TECH
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