Ultra-thick hydrogen-free diamond-like film and preparation method thereof
A diamond thin film, ultra-thick technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of easy peeling of the film layer, poor bonding force, thin film wear, etc., to expand the scope of application, Enhanced wear resistance, good durability effect
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[0023] A method for preparing an ultra-thick hydrogen-free diamond-like film coating, comprising the following steps:
[0024] (1) Workpiece pretreatment. Grinding and polishing the workpiece, the surface roughness of the workpiece after grinding and polishing is Ra<0.1μm, then the workpiece is ultrasonically cleaned with pure water and alcohol, and finally the workpiece is dried and placed on the turret of the vacuum ion plating furnace cavity;
[0025] (2) Ion cleaning. After vacuuming, when the pressure in the vacuum chamber is lower than 8×10-4Pa, start the substrate turret, control the speed at 2-4rpm, pass in argon gas, perform argon ion glow cleaning, then reduce the flow rate of argon gas, and turn on the Cr metal target , carry out metal ion etching and cleaning on the workpiece, and the cleaning conditions of argon ion glow discharge are as follows: the air pressure is 2-4Pa, the substrate temperature is 300-400°C, the substrate bias voltage is -800--1000V, and the ...
Embodiment 1
[0030] The ball milled cast iron piston ring workpiece is ground and polished to a roughness of Ra=80nm, first cleaned with pure water and alcohol for 20 minutes, then dried and placed on the turntable of the vacuum ion plating furnace cavity, and a part of the elemental Cr is installed at the position of the arc target Target, a part of the installation of high-purity graphite target, close the door of the vacuum chamber. Turn on the mechanical pump, Roots pump and molecular pump in turn to evacuate the vacuum chamber to 5×10-4Pa, pass in argon gas to 2.0Pa, heat the substrate to 350°C, and apply a negative bias of -1000V to trigger glow Discharge and clean by argon ion sputtering for 20 minutes. After glow cleaning, adjust the argon flow rate, control the vacuum chamber pressure at 0.3Pa, set the substrate bias voltage to -900V, and the duty cycle to 40%, turn on the metal Cr target, and set the target arc current to 80A for metal ion etching. etch cleaning with a depositio...
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