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A double-layer perovskite manganese oxide single-phase film material with vertically aligned nanostructures and its preparation method

A technology of double-layer perovskite and manganese oxide, which is applied in the direction of manganese compounds, chemical instruments and methods, nanotechnology, etc., can solve the problems such as difficult to obtain nanostructure growth

Active Publication Date: 2022-02-08
JINGCHU UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For single-phase films, it is difficult to achieve a desired growth of vertically aligned nanostructures only by controlling the lattice mismatch between the substrate and the film.

Method used

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  • A double-layer perovskite manganese oxide single-phase film material with vertically aligned nanostructures and its preparation method
  • A double-layer perovskite manganese oxide single-phase film material with vertically aligned nanostructures and its preparation method
  • A double-layer perovskite manganese oxide single-phase film material with vertically aligned nanostructures and its preparation method

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Embodiment 1

[0027] The specific steps of preparation are as follows:

[0028] S1, according to the chemical formula La 1-x Ca x MnO 3 Select x=0.5, that is, the chemical formula of the material is La 0.5 Ca 0.5 MnO 3 According to the molar ratio of lanthanum, calcium, and manganese, weigh lanthanum oxide, calcium oxide, and manganese oxide respectively, grind them evenly with an agate bowl, and then sinter at high temperature for many times to form lanthanum calcium manganese oxide powder. Finally, it is sintered at high temperature through mold pressing to form La 0.5 Ca 0.5 MnO 3 target.

[0029] S2, select (LaAlO 3 ) 0.3 (Sr 2 AlTaO 6 ) 0.7 (001)[LSAT(001)] single crystal substrate. First, the substrate and the La prepared in S1 0.5 Ca 0.5 MnO 3 The target is mounted in a pulsed laser deposition system and the chamber is then evacuated. The substrate was first heated to 680 °C before the thin film was prepared. Then a superconducting magnet is used to apply a strong...

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Abstract

The invention discloses a double-layer perovskite manganese oxide single-phase film material with vertically arranged nanostructures, which is grown on a substrate. The chemical formula of the double-layer perovskite manganese oxide single-phase film material is La 1‑x Ca x MnO 3 , 0.35<x≤1, its double-layer structure consists of a 0‑40 nm thick continuous layer grown along the substrate epitaxially and a nanocolumn layer perpendicular to the continuous layer, and the nanocolumn layer is epitaxially along the continuous layer grow. The invention also discloses a preparation method and application of a double-layer perovskite manganese oxide single-phase film material with vertically arranged nanostructures. The material of the invention has remarkable perpendicular magnetic anisotropy and adjustable low-field magnetoresistance effect with wide operating temperature range.

Description

technical field [0001] The invention relates to the field of manganese oxide thin film materials, in particular to a double-layer perovskite manganese oxide single-phase thin film material with vertically arranged nanostructures and a preparation method thereof. Background technique [0002] Complex oxide thin film materials with vertically aligned nanostructures are compared with traditional planar thin film materials because they have a much larger vertical interface area than the substrate area, as well as additionally generated grain boundaries, interfacial coupling, and interfacial strain adjustment. Its characteristics and functionality are significantly different from traditional planar membrane structures. [0003] At present, thin films with vertically aligned nanostructures are mainly two-phase composite thin films. Such vertically aligned nanostructures can typically be induced in self-assembled two-phase nanocomposite films due to the large lattice mismatch betw...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G45/12H01L43/08H01L43/10B82Y30/00B82Y40/00
CPCC01G45/1264B82Y40/00B82Y30/00C01P2002/34C01P2004/64C01P2002/72C01P2004/62C01P2006/42C01P2004/20C01P2004/30C01P2004/10C01P2004/50H10N50/85H10N50/10
Inventor 张科军刘剑敏戴建明朱雪斌孙玉平
Owner JINGCHU UNIV OF TECH
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