A polymer-assisted epitaxial growth bifeo 3-δ Process for semiconducting thin films and products obtained therefrom
A polymer-assisted, epitaxial growth technology is applied in the field of epitaxial growth of BiFeO3-δ semiconducting thin films, which can solve the problems of difficult detection of semiconductor chips, and achieve the effects of good application potential, high electrical conductivity and good ferroelectricity.
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Embodiment 1
[0032] Semiconducting Ferroelectric BiFeO 3-δ The preparation of thin film, steps are as follows:
[0033] 1. Configuration of precursor solution
[0034] Bi(NO 3 ) 3 ∙5H 2 O solid powder was added to glacial acetic acid (CH 3 COOH) (Bi: glacial acetic acid molar ratio is 1:8), continuously stirred on a magnetic stirrer for 8 h, and kept the temperature at 40-50 °C until the solution was a transparent solution, and the Bi(NO 3 ) 3 ∙5H 2 Fe(NO 3 ) 3 ∙9H 2 O was added to the above solution, and continuously stirred on a magnetic stirrer for 2h until the Fe(NO 3 ) 3 ∙9H 2 After O is completely dissolved. Then add polyethylene glycol 20000, polyethylene glycol 400 and citric acid according to the molar ratio of bismuth ferrite: polyethylene glycol 20000: polyethylene glycol 400: citric acid=1: 0.01%: 0.01%: 1, and finally Add equal volume ratio of ethylene glycol and ethylene glycol methyl ether to dilute the solution to BiFeO 3 The concentration of the solution was...
Embodiment 2
[0042] Semiconducting Ferroelectric BiFeO 3-δ The preparation of thin film, steps are as follows:
[0043] 1. Configuration of precursor solution
[0044] With embodiment 1.
[0045] 2. Coating machine throwing film
[0046] (100) Nb:SrTiO 3 The substrate is placed in a tube furnace at 700 o C under heat treatment for 30 minutes, then keep the temperature at 80 o C and put it into a homogenizer, keep the humidity range at 14-17%, then apply the precursor solution on the substrate, and prepare a single-layer film by spin coating; wherein, the first layer of film is thrown at a speed of 7000rpm , the time is 2 minutes, and the film thickness is about 11-16 nm; the second-third film is spun at a speed of 5000rpm, the time is 1 minute, the film thickness is about 20-25 nm, and the other layers are spun at a speed of 6000rpm film, the time is 1 minute, and the film thickness is guaranteed to be around 15-18 nm;
[0047] 3. Heat treatment
[0048] With embodiment 1.
[0049...
Embodiment 3
[0052] Semiconducting Ferroelectric BiFeO 3-δ The preparation of thin film, steps are as follows:
[0053] 1. Configuration of precursor solution
[0054] With embodiment 1.
[0055] 2. Coating machine throwing film
[0056] (100) Nb:SrTiO 3 The substrate is placed in a tube furnace at 700 o C under heat treatment for 30 minutes, then keep the temperature at 80 o C and put it into a homogenizer, keep the humidity range at 14-17%, then apply the precursor solution on the substrate, and prepare a single-layer film by spin coating; wherein, the first layer of film is thrown at a speed of 6000rpm , the time is 2 minutes, and the film thickness is about 14-18 nm; the second-third film is spun at a speed of 4000rpm, and the time is 1 minute, and the film thickness is about 23-28nm, and the other layers are spun at a speed of 5000rpm , the time is 1 minute, and the film thickness is guaranteed to be around 22-25;
[0057] 3. Heat treatment
[0058] With embodiment 1.
[0059...
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