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A method for optically degenerate doping of transition metal chalcogenides and its application

A transition metal and sulfide technology, applied in sustainable manufacturing/processing, climate sustainability, semiconductor devices, etc., can solve the problems of destroying the lattice structure, unstable process repeatability, etc.

Active Publication Date: 2022-01-04
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this surface charge transfer method may be due to the instability of the surface material in the air, resulting in the instability of this doping method and poor process repeatability. Among them, the method of doping by surface physical layer deposition is considered to be the most stable and reliable. Efficient doping method
Surface plasma treatment of two-dimensional materials is also an effective doping method. Under the bombardment of high-energy plasma, some ions combine with the material to change its electrical properties. destroy its lattice structure

Method used

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  • A method for optically degenerate doping of transition metal chalcogenides and its application
  • A method for optically degenerate doping of transition metal chalcogenides and its application
  • A method for optically degenerate doping of transition metal chalcogenides and its application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] (1) Transfer 15 nm thick MoS on heavily doped silicon or silicon dioxide substrate by dry transfer method 2 flakes;

[0037] (2) Use MODELWA-650MZ-23NPP homogenizer with semiconductor material MoS 2 Spin-coat PMMA950 on the substrate as an electron beam photoresist, use an FEI Inspect F50 scanning electron microscope to perform electron beam lithography to expose both ends of the material, and use a Techno metal evaporation instrument to deposit titanium / gold on both sides of the exposed material (10nm / 35nm) as the test electrode of the material;

[0038] (3) Place the above-mentioned device in the Tekno Metal Evaporation Instrument again, and deposit a 6nm gold layer on the surface of the device by electron beam evaporation. At this time, a part of the nano-gold is deposited on the MoS 2 On the thin sheet, a part of the nano-gold is directly deposited on the silicon or silicon dioxide substrate;

[0039] (4) Then place the obtained electrical device in a quartz tube...

Embodiment 2

[0044] Using the same method as in Example 1, transfer ReS on heavily doped silicon or silicon dioxide substrates 2 thin slices, and deposited titanium / gold as contact electrodes on both sides of the material by electron beam lithography, and carried out the deposition of nano-gold layer and high-temperature annealing process. The scanning electron microscope image of the prepared sample is shown in image 3 shown. Among them: 1 is ReS 2 Gold on the sheet and surface; 2 is the electrode after annealing;

[0045] Electrical tests were performed on the sample, such as Figure 4 As shown in the middle curve 1, the ground state transfer characteristic curve of the device shows strong n-type characteristics, and after the device is subjected to ultraviolet light, its current transfer characteristic curve shows N-type doping characteristics.

[0046] After using a hand-held UV lamp to irradiate the device with ultraviolet light, the transfer characteristic curve is as follows F...

Embodiment 3

[0048] Using the same method as in Example 1, transfer MoSe on heavily doped silicon or silicon dioxide substrates 2 Thin slices, MoSe2 thin slices, followed by electron beam lithography to deposit titanium / gold on both sides of the material as contact electrodes, and perform nano-gold layer deposition and high-temperature annealing process. The prepared samples are shown in Figure 5 shown.

[0049] Electrical tests were performed on the sample, such as Image 6 As shown in the middle curve 1, the ground state transfer characteristic curve of the device shows strong N-type characteristics, and after the device is exposed to ultraviolet light, its current transfer characteristic curve shows N-type doping characteristics.

[0050] After using a hand-held UV lamp to irradiate the device with ultraviolet light, the transfer characteristic curve is as follows Image 6 Shown in curve 2. Its current transfer characteristic curve shows N-type doping characteristics, which is speci...

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Abstract

The invention discloses a method for optically degenerate doping of transition metal chalcogenides and its application. A gold nano-layer is deposited on the surface of a two-dimensional material by electron beam evaporation, and a moist layer is formed on the surface of the TMDc material after high-temperature annealing treatment. Gold nano film with good wettability. Under the irradiation of ultraviolet light, the electrons in the gold nano layer overflow and inject into the semiconductor layer due to the external photoelectric effect, and the excess electrons form a stable N-type doping to the semiconductor. After the ultraviolet light is removed, the photogenerated surplus electrons still remain in the material, making this doping method have long-term stability. At the same time, this method is universal and can be applied to a variety of N-type TMDc materials. This fast, simple, universal and stable new doping method opens up new ideas for the research of two-dimensional semiconductor materials.

Description

technical field [0001] The invention relates to the technical field of semiconductor material modification, in particular to a method for optically degenerate doping of transition metal chalcogenides, and in particular to an N-type doping method for two-dimensional semiconductor materials. Background technique [0002] With the development of Moore's Law, silicon-based semiconductors have developed to the limit node. In recent years, semiconducting two-dimensional transition metal chalcogenides (TMDs) with tunable bandgap have been developed due to their large carrier mobility, high field-effect switching ratio, low subthreshold swing and effective suppression of short channel The effect is seen as a replacement for the next generation of silicon-based semiconductors. In order to realize the functions of silicon-based semiconductors, doping TMDs has received extensive attention. Traditional doping methods include ion implantation and in-situ growth atom replacement, but fo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/032H01L31/113
CPCH01L31/18H01L31/032H01L31/113Y02P70/50
Inventor 刘晶张荣杰
Owner TIANJIN UNIV
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