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Diffusion Depth Detection Method for Semiconductor Doping

A technology of diffusion depth and detection method, which is applied in the field of photodetectors, can solve the problem of low cost of batch testing chips and achieve real-time feedback and accurate test characterization

Active Publication Date: 2021-07-09
UNIV OF SCI & TECH OF CHINA
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Problems solved by technology

[0005] Aiming at the existing technical problems, the present invention proposes a method for detecting the diffusion depth of semiconductor doping, which is used to solve the problem that it is difficult to realize batch testing in the prior art, and is generally applicable to chips on the entire wafer, low cost, and non-destructive. Characterization detection problems of dopant diffusion

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  • Diffusion Depth Detection Method for Semiconductor Doping
  • Diffusion Depth Detection Method for Semiconductor Doping
  • Diffusion Depth Detection Method for Semiconductor Doping

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Embodiment Construction

[0031] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0032] The present invention finds through research that for photodetectors based on P-N junction III-V semiconductor materials, the undoped region of the device is defined by using the epitaxial layer structure parameters, the lower edge of the cap layer and the diffusion edge, and then combines the gain and breakdown The voltage is a function of the thickness of the undoped part of the device region. It can be seen that the breakdown voltage and the diffusion depth satisfy the conditional equation of the Poisson equation in the physical model and the avalanche (that is, breakdown) in the impact ionization model, and the equation in the The unknown parameters are only the dopant diffusion thickness H and the breakdown vol...

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Abstract

A method for detecting the diffusion depth of semiconductor doping, the method comprises: conducting dopant diffusion, and measuring the breakdown voltage of a semiconductor photodetecting device; Complementary diffusion to optimize the diffusion process. The detection method does not need to complete the tape-out process of all chips, does not require slicing to a single chip device, and does not require destructive sample preparation for other characterization detection methods, and can perform a wide range of rapid, rapid, and rapid on-wafer spotting when the dopant diffusion is completed. Non-destructive testing and random testing, the test characterization is accurate, efficient and non-destructive. Based on this method, the diffusion process is optimized to achieve the expected target and subsequent tape-out process.

Description

technical field [0001] The invention relates to the field of photodetectors, in particular to a method for detecting the diffusion depth of semiconductor doping. Background technique [0002] The thermal diffusion of semiconductor dopants is often used in III-V semiconductor photodetectors based on P-N junctions. Metal-organic Chemical Vapor Deposition (MOCVD), the diffusion profile and depth, etc. The gas flow rate, temperature, carrier gas flow rate, time and other parameters are related, and the diffusion process of III-V semiconductor photodetector chips based on P-N junctions often requires multiple diffusions, and each diffusion is not uniformly diffused across the entire chip. There are different situations such as forward diffusion, lateral diffusion, and constant concentration diffusion. It needs to be analyzed with the help of various advanced characterization methods. [0003] At present, the characterization and detection methods commonly used for the diffusion...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
CPCH01L22/14H01L22/20
Inventor 王亮张博健秦金
Owner UNIV OF SCI & TECH OF CHINA
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