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Temperature control-based high-energy storage flexible composite membrane and preparation method thereof

A composite film and high energy storage technology, which is applied to the parts of fixed capacitors and the dielectric of fixed capacitors, etc., can solve the problems of poor conductivity and increase energy storage density, and achieve increased dielectric constant, avoid aggregation, and simple process easy effect

Active Publication Date: 2019-07-30
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It is precisely because the conductivity of the reduced graphene oxide (rGO) obtained after GO reduction treatment is not as good as that of the original graphene, so how to control the content of conductive particles in the composite film through temperature to reduce the dielectric loss and increase the Energy storage density has become a problem that needs to be solved

Method used

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  • Temperature control-based high-energy storage flexible composite membrane and preparation method thereof
  • Temperature control-based high-energy storage flexible composite membrane and preparation method thereof
  • Temperature control-based high-energy storage flexible composite membrane and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Example 1: Preparation of PVDF-1%GO composite membrane at 50°C

[0038] Step 1: Weigh a certain amount of GO and PVDF according to volume percentage 1:99.

[0039] The second step: at first, according to the mass percentage 7% of solute and solvent, the above-mentioned weighed PVDF powder is dissolved in the corresponding amount of N, N-dimethylformamide (DMF), stir on a magnetic stirrer for 2 Hours, a PVDF / DMF solution was obtained; then, the weighed GO was added to the PVDF / DMF solution, and the mixed solution was stirred on a magnetic stirrer at 50°C for another 3 hours and ultrasonically treated for 2 hours. Finally, let stand for 30 minutes to remove air bubbles.

[0040] Step 3: Slowly pour the solution that has been left standing on the cleaned flat silicon wafer, and wait for the solution to level off automatically to form a wet film.

[0041] Step 4: Move the above-mentioned silicon wafer with the wet film into a vacuum oven, dry it under vacuum at 50° C. for...

Embodiment 2

[0045] Example 2: Preparation of PVDF-0.5%GO composite membrane at 60°C

[0046] Step 1: Weigh a certain amount of GO and PVDF according to the volume percentage of 0.5:99.5.

[0047] The second step: at first, according to the mass percentage 7% of solute and solvent, the above-mentioned weighed PVDF powder is dissolved in the corresponding amount of N, N-dimethylformamide (DMF), stir on a magnetic stirrer for 2 Hours, a PVDF / DMF solution was obtained; then, the weighed GO was added to the PVDF / DMF solution, and the mixed solution was stirred on a magnetic stirrer at 60°C for another 2 hours and ultrasonically treated for 2 hours. Finally, let stand for 30 minutes to remove air bubbles.

[0048] Step 3: Slowly pour the solution that has been left standing on the cleaned flat silicon wafer, and wait for the solution to level off automatically to form a wet film.

[0049] Step 4: Move the above-mentioned silicon wafer with the wet film into a vacuum oven, dry it under vacuum ...

Embodiment 3

[0053] Example 3: Preparation of PVDF-1.5%GO composite membrane at 70°C

[0054] Step 1: Weigh a certain amount of GO and PVDF according to volume percentage 1.5:98.5.

[0055] Second step: at first, according to the mass percent of solute and solvent 7%, the above-mentioned weighed PVDF powder is dissolved in the corresponding amount of N,N-dimethylformamide (DMF), stir on a magnetic stirrer for 3 Hours, a PVDF / DMF solution was obtained; then, the weighed GO was added to the PVDF / DMF solution, and the mixed solution was stirred on a magnetic stirrer at 70°C for another 3 hours and ultrasonically treated for 3 hours. Finally, let stand for 30 minutes to remove air bubbles.

[0056] Step 3: Slowly pour the solution that has been left standing on the cleaned flat silicon wafer, and wait for the solution to level off automatically to form a wet film.

[0057] Step 4: Move the above-mentioned silicon wafer with the wet film into a vacuum oven, dry it under vacuum at 70° C. for 1...

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Abstract

The invention discloses a temperature control-based high-energy storage flexible composite membrane and a preparation method thereof. According to the flexible composite membrane, polyvinylidene fluoride is taken as a matrix; a certain amount of graphene oxides are uniformly dispersed in the polyvinylidene fluoride matrix; through controlling the composite temperature, the reduction degree of thegraphene oxides is controlled so that the content of conducting particles in the composite membrane is controlled; and through measuring ferroelectric hysteresis loops, energy storage density in one-to-one correspondence with the ferroelectric hysteresis loops is obtained. Only the temperature needs to be changed, and the amount of the graphene oxides does not need to be changed, so that when being compared with the traditional method for increasing the conducting particles, the method is capable of avoiding the gathering of reduced graphene oxides, effectively improving the dispersion effectof the reduced graphene oxides in the polyvinylidene fluoride matrix, reducing the dielectric loss and increasing the energy storage density. In addition, the flexible composite membrane and the preparation method are simple and easy in process, low in cost and soft and light in membrane, can easily realize a surface mounting function of micro capacitors and can be widely applied to the fields offlexible material energy storage and the like.

Description

technical field [0001] The invention relates to a high-energy-storage flexible composite membrane based on temperature control and a preparation method thereof, which can be used in the technical field of energy storage. Background technique [0002] With the improvement of the quality of life, people need to use electric energy everywhere, so the development of portable flexible energy storage systems is very necessary. However, it is difficult for batteries used in daily life to overcome the disadvantage of low power density, that is, they cannot be charged and discharged quickly. Although supercapacitors have high power density, they are limited by the chemical stability and electrochemical stability of the electrolyte. The working voltage generally does not exceed 3.0V, and the working temperature is also low. It is difficult to apply in special environments such as high voltage and high temperature. . Dielectric capacitors have extremely high power density, are simple...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/06H01G4/18C08J5/18C08L27/16C08K3/04
CPCC08J5/18C08J2327/16C08K2201/001C08K3/042H01G4/06H01G4/18
Inventor 邓纪彪范庆宇张瑾郭艳艳
Owner NANJING UNIV OF POSTS & TELECOMM
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