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Nanometer metal film auxiliary substrate and fabrication method thereof

A nano-metal film and auxiliary substrate technology, applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of high porosity, high sintering temperature, poor thermal conductivity, etc., to achieve improved Reliability, the effect of lowering the firing temperature

Active Publication Date: 2019-07-19
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] In order to overcome the deficiencies of the prior art, avoid the technical problems of high sintering temperature, high porosity, poor thermal conductivity, complex process, and harsh process conditions, and improve the overall reliability performance of power devices, the invention provides a nano-metal film auxiliary Substrates, including:

Method used

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  • Nanometer metal film auxiliary substrate and fabrication method thereof
  • Nanometer metal film auxiliary substrate and fabrication method thereof
  • Nanometer metal film auxiliary substrate and fabrication method thereof

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Embodiment 1

[0057] This embodiment provides the relationship between the nano copper shell and the sintering temperature, the structure described in this embodiment, such as figure 2 As shown in (a), it is characterized in that the main body (first material) connecting the auxiliary layer is silver-copper-titanium active brazing material, and the second material is nano-copper particles, which are driven into the main body of the first material solder by physical impact, The ceramic material is silicon nitride, and the solder is placed on the surface of the ceramic substrate by screen printing, and the final metal-ceramic substrate is formed by baking the system, such as figure 2 (b) shown.

Embodiment 2

[0059] This embodiment provides a schematic structural view of a cermet substrate with a nano-metal auxiliary layer. The structure described in this embodiment is characterized in that the main body (the first material) connecting the auxiliary layer is silver copper titanium active brazing material. The second material is a nano-tin material, which is penetrated into the main body of the first material solder by physical impact to form a coating on the titanium element in the active solder; titanium is easy to oxidize and deactivate during the baking process, so high vacuum conditions are extremely important ; Through tin coating, it can effectively resist oxidation, thereby reducing the dependence on vacuum conditions.

Embodiment 3

[0061] This embodiment provides a nano-metal film auxiliary substrate structure, such as figure 2 shown. The structure described in this embodiment is characterized in that the main body (first material) of the connection auxiliary layer and the second material driven in are both copper materials, so when connecting the oxygen-free copper and the ceramic substrate, the connection layer and the copper foil Copper-copper bonding can be achieved between them to improve the connection strength. before baking, such as figure 2 As shown in (a), there is an unformed connection auxiliary layer material between the oxygen-free copper foil 1 and the ceramic substrate 5, which includes large-sized copper particles 4 with an average particle diameter of 0.1-100 μm, and small copper particles with an average particle diameter of 1 nm-100 nm. Nano-sized copper particles 2, glass or ceramic phase composed of bismuth oxide, silicon oxide, aluminum oxide, calcium oxide, sodium oxide, cesiu...

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Abstract

The invention provides a nanometer metal film auxiliary substrate and a fabrication method thereof. The structure of the nanometer metal film auxiliary substrate comprises a substrate, a nanometer metal auxiliary connection layer, a metal layer and a metal surface plating layer. The fabrication method of the nanometer metal film auxiliary substrate is provided. Nanometer-scale metal particle is thrown into the nanometer metal auxiliary connection layer by a physical impact mode, so that small-size nanometer metal particle is filled in gaps of large-size metal particle, and the problems of highporosity and low bonding strength of an original thick-copper ceramic substrate are prevented; and meanwhile, the metal average grain size can be reduced by mixing of nanometer metal particle, so that the process temperature is reduced, and the production cost is reduced.

Description

technical field [0001] The invention relates to the field of chip packaging and interconnection, and more specifically relates to the preparation technology of a composite substrate. Background technique [0002] In the semiconductor fields such as power electronics and optoelectronic communications, semiconductor devices often need to carry extreme conditions such as high voltage, high current, high switching rate, and high operating temperature during operation. With the continuous recording of operating voltage and current of power devices in recent years Refresh, as well as the continuous reduction of chip size, the power density borne by the power device as a whole will increase sharply, which poses new challenges to the various components of the chip package. As a part in direct contact with the chip, the substrate plays a variety of functions such as mechanical support, conductive interconnection, heat dissipation management and prevention of breakdown, and its develo...

Claims

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Application Information

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IPC IPC(8): H01L23/498H01L21/48B82Y30/00
CPCB82Y30/00H01L21/4867H01L23/49883
Inventor 刘旭叶怀宇张卫红敖日格力李俊张国旗
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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