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A kind of preparation method of near-infrared enhanced room temperature gas sensing material

A gas sensing and near-infrared technology, applied in the field of nanomaterials, can solve the problems of difficult desorption of the detected gas, affecting the overall performance of the material, and long detection recovery time, so as to improve the gas sensing performance and improve the gas sensing sensitivity. , to achieve the effect of gas sensing performance

Active Publication Date: 2021-07-27
陕西格物旭光科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, oxygen vacancies are easy to react with surface oxygen and water, thus losing their effectiveness. Therefore, how to fix oxygen vacancies and keep functioning is one of the problems to be solved urgently.
[0005] In summary, the preparation of room temperature gas sensing materials still has difficulty in desorption of the detected gas, resulting in a long detection recovery time and affecting the overall performance of the material; on the other hand, the oxygen vacancies of room temperature gas sensing materials are easy to contact Oxygen and water and other reactions, thus losing effectiveness and other technical problems urgently need to be solved

Method used

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  • A kind of preparation method of near-infrared enhanced room temperature gas sensing material

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Experimental program
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Effect test

Embodiment 1

[0026] The preparation of a tin oxide porous nanotube containing oxygen vacancies is carried out as follows:

[0027] (1) Weigh 0.35g of tin chloride pentahydrate, 2.2g of N,N-dimethylformamide, and 2.2g of ethanol into the Erlenmeyer flask and stir to dissolve, then add 0.4g of PVP into it, stir for 12 hours, and prepare the precursor .

[0028] (2) Take the precursor solution and put it in the high-voltage electrospinning molding equipment, and use the high-voltage electrostatic molding technology to synthesize it. The precursor solution is put into a syringe pump with a needle of 0.8mm, and the high-voltage static electricity is set to 16KV, and the temperature is set to 60°C. Sol fibers; put the collected fibers in an oven with a temperature set at 80°C, and dry for 3 hours; finally put the fibers in a muffle furnace, heat up at a rate of 4°C / min, and roast at 600°C for 3 hours to obtain tin dioxide porous nanotubes.

[0029] (3) The tin dioxide porous nanotubes are plac...

Embodiment 2

[0035] The preparation of a tin oxide porous nanotube containing oxygen vacancies is carried out as follows:

[0036] (1) Weigh 0.33g of tin chloride pentahydrate, 2.0g of N,N-dimethylformamide, and 2.0g of ethanol into the Erlenmeyer flask and stir to dissolve, then add 0.3g of PVP into it, stir for 8 hours, and prepare the precursor .

[0037] (2) Take the precursor solution and put it in the high-voltage electrospinning molding equipment, and use the high-voltage electrostatic molding technology to synthesize it. The precursor solution is put into a syringe pump with a needle of 0.8mm, and the high-voltage static electricity is set to 12KV, and the temperature is set to 50°C. Sol fiber; put the collected fiber in an oven with a temperature set at 70°C, and dry it for 4 hours; finally put the fiber into a muffle furnace, heat up at a rate of 4°C / min, and bake it at 650°C for 2 hours to obtain tin dioxide porous nanotubes.

[0038] (3) The tin dioxide porous nanotubes are p...

Embodiment 3

[0043] The preparation of a tin oxide porous nanotube containing oxygen vacancies is carried out as follows:

[0044] (1) Weigh 0.37g of tin chloride pentahydrate, 2.4g of N,N-dimethylformamide, and 2.4g of ethanol into the Erlenmeyer flask and stir to dissolve, then add 0.5g of PVP into it, stir for 15h, and prepare the precursor .

[0045] (2) Take the precursor solution and put it in the high-voltage electrospinning molding equipment, and use the high-voltage electrostatic molding technology to synthesize it. The precursor solution is put into a syringe pump with a needle of 0.8mm. Sol fiber; put the collected fiber in an oven with a temperature set at 90°C, and dry it for 4 hours; finally put the fiber into a muffle furnace, heat up at a rate of 4°C / min, and roast at 650°C for 3 hours to obtain tin dioxide porous nanotubes.

[0046] (3) The tin dioxide porous nanotubes are placed in a hydrogen plasma tubular induction furnace, the hydrogen flow rate is set to 50ml / min, t...

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Abstract

A preparation method of a near-infrared enhanced room temperature gas sensing material is based on tin tetrachloride pentahydrate, N, N-dimethylformamide, ethanol, polyvinylpyrrolidone, ammonium carbonate, chloroauric acid tetrahydrate, aniline, hydrochloric acid , ammonium persulfate as raw materials, including the preparation of tin dioxide porous nanotubes, hydrogen plasma treatment, loading of Au nanoparticles, SnO 2 / Au / PANI preparation and other steps. The present invention can obtain porous SnO with good crystallinity through electrospinning and high temperature sintering 2 Nanotubes will generate a large number of oxygen vacancies in the sample after hydrogen plasma treatment, which can effectively improve the gas sensing sensitivity. The gas sensing sensitivity to 100ppm concentration of ethanol at room temperature is 17.32, and the sensitivity at 40ppm concentration is 10.33. The overall material Good performance, the invention can effectively anchor oxygen vacancies, and can also respond to near-infrared light to improve gas sensing performance. At the same time, the invention can also effectively reduce the gas response temperature to achieve gas sensing performance at room temperature.

Description

technical field [0001] The invention relates to the technical field of nanometer materials, in particular to a preparation method of a near-infrared enhanced room temperature gas sensing material. Background technique [0002] On-site detection of gases that pose a threat to the environment and human health has attracted increasing attention. In the past decades, metal-oxide-semiconductor-based gas sensors have been extensively studied due to their excellent sensing performance even in harsh environments. Among them, tin dioxide (SnO 2 ), as an n-type semiconductor, has been shown to be promising for gas sensing due to its excellent optoelectronic properties, excellent thermal stability (melting point of 1127 °C), chemical inertness, low cost, and nontoxicity. SnO 2 The sensing mechanism of gas sensors is based on the electron transport of the sensor in different target gases. When SnO 2 When exposed to air, the electrons are transferred from its conduction band to the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): D01F9/08D06M10/02D06M11/83D06M15/61D06M11/50D06M11/13C08G73/02G01N21/3504G01N21/359
CPCC08G73/0266D01F9/08D06M10/02D06M10/025D06M11/13D06M11/50D06M11/83D06M15/61G01N21/3504G01N21/359
Inventor 赵磊孟丹丹李艳艳赵小奇
Owner 陕西格物旭光科技有限公司
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