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Molybdenum disulfide@molybdenum disulfide core-shell nano rod growing along <010> crystal orientation and preparation method thereof

A molybdenum dioxide and molybdenum disulfide technology is applied in the field of nanomaterials to achieve the effects of uniform growth distribution, good crystallinity and high orientation

Active Publication Date: 2019-06-11
CHENZHOU TEIKYO CHEM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

"Epitaxial Growth of Highly Oriented Metallic MoO 2 @MoS 2 Nanorods on C-sapphire" (Di Wu et al., PHYSICAL CHEMISTRY, C2018, 122, 1860-1866, ) provides a method for growing highly oriented MoO on sapphire substrates. 2 @MoS 2 nanorods, but it was only obtained along the MoO 2 Crystalline Growth MoO 2 @MoS 2 nanorods

Method used

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  • Molybdenum disulfide@molybdenum disulfide core-shell nano rod growing along &lt;010&gt; crystal orientation and preparation method thereof
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  • Molybdenum disulfide@molybdenum disulfide core-shell nano rod growing along &lt;010&gt; crystal orientation and preparation method thereof

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preparation example Construction

[0033] The invention provides a method for preparing molybdenum dioxide@molybdenum disulfide core-shell nanorods grown along the crystal direction, comprising the following steps:

[0034] Using the m-plane of sapphire as the substrate, sulfur block and molybdenum trioxide powder as the reaction raw materials, carry out atmospheric pressure chemical vapor deposition to obtain molybdenum dioxide@molybdenum disulfide core-shell nanorods grown along the crystal direction; the sulfur The mass ratio of block to molybdenum trioxide powder is 25-35:1.

[0035] In the present invention, the substrate is preferably an elongated substrate. In the present invention, the length of the elongated substrate is preferably 2 cm to 3 cm, more preferably 2.5 cm; the width is preferably 1 to 2 cm, more preferably 1.5 cm.

[0036] In the present invention, the left edge of the substrate is preferably placed directly above the molybdenum trioxide powder.

[0037]In the present invention, the su...

Embodiment 1

[0057] 1) First cut the m-plane sapphire into strip-shaped substrates along its crystal direction with a glass knife. The substrates were cleaned in an ultrasonic oscillator with deionized water, acetone, isopropanol and hydrogen peroxide, and each process took 15 minutes. Blow dry the substrate with a nitrogen gun for later use.

[0058] 2) Put the weighed 450mgS block into the quartz ark, 15mgMoO 3 The powder is put into the quartz ark, and the left edge of the substrate is placed on the MoO 3 Powder is right on top.

[0059] 3) will be loaded with MoO 3 The quartz ark of powder and substrate is placed in the right temperature zone of the CVD tube furnace, and the sapphire substrate is located in the center of the right temperature zone, and the quartz ark equipped with the S block is placed in the center of the left temperature zone, and then the tube furnace is sealed. N 2 As carrier gas and shielding gas.

[0060] 4) Set the growth program, the temperature in the fi...

Embodiment 2

[0079] 1) First cut the m-plane sapphire into strip-shaped substrates along its crystal direction with a glass knife. The substrates were cleaned in an ultrasonic oscillator with deionized water, acetone, isopropanol and hydrogen peroxide, and each process took 15 minutes. Blow dry the substrate with a nitrogen gun for later use.

[0080] 2) Put the weighed 350mgS block into the quartz ark, 10mgMoO 3 The powder is put into the quartz ark, and the left edge of the substrate is placed on the MoO 3 Powder is right on top.

[0081] 3) will be loaded with MoO 3 The quartz ark of powder and substrate is placed in the right temperature zone of the CVD tube furnace, and the sapphire substrate is located in the center of the right temperature zone, and the quartz ark equipped with the S block is placed in the center of the left temperature zone, and then the tube furnace is sealed. N 2 As carrier gas and shielding gas.

[0082] 4) Set the growth program, the temperature in the fi...

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Abstract

The invention provides a molybdenum disulfide@molybdenum disulfide core-shell nano rod growing along a (010) crystal orientation and a preparation method thereof, and belongs to the technical field ofnano materials. The preparation method comprises the following step: taking the m surface of sapphire as a substrate and taking a sulfur block and molybdenum trioxide powder as reaction raw materialsto carry out normal-pressure chemical vapor deposition to obtain the molybdenum disulfide@molybdenum disulfide core-shell nano rod growing along the (010) crystal orientation, wherein the mass ratioof the sulfur block to the molybdenum trioxide powder is (25-35):1. According to the method disclosed by the invention, the m surface of the sapphire is taken as the substrate, and the molybdenum disulfide@molybdenum disulfide core-shell nano rod growing along the (010) crystal orientation is obtained through the normal-pressure chemical vapor deposition method. The obtained nano rod is a monoclinic system, and is good in crystallinity, high in directionality and uniform in growth distribution.

Description

technical field [0001] The invention relates to the technical field of nanomaterials, in particular to a molybdenum dioxide@molybdenum disulfide core-shell nanorod grown along the <010> crystal direction and a preparation method thereof. Background technique [0002] Transition metal oxides have been extensively studied due to their various outstanding properties and potential applications in electronic and photonic devices, such as gas sensors, photodetectors, supercapacitors, and field-effect transistors, as well as catalysts. The crystal structure of transition metal oxides has a significant impact on their properties, and Mo oxides, as well-known transition metal oxides, are widely used in electronic devices, photodetectors, photocatalysts, and organic photovoltaic devices. In addition to a large number of non-stoichiometric phases, such as Mo 4 o 11 、Mo 9 o 26 etc., Mo oxides have two main phases: MoO 3 and MoO 2 . MoO 3 It is an intrinsic n-type semicondu...

Claims

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Application Information

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IPC IPC(8): C30B29/16C30B29/46C30B25/18C30B29/60B82Y30/00B82Y40/00
Inventor 黄寒刘金鑫施姣肖君婷陈凤鸣
Owner CHENZHOU TEIKYO CHEM TECH
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