Graphene preparation method based on microwave plasma chemical vapor deposition

Abstract

The invention provides a graphene preparation method. The graphene preparation method comprises the steps that hydrogen etching is carried out on a SiC substrate silicon face to form an atom step-shaped surface; a SiC substrate subjected to hydrogen etching is arranged in a reaction chamber, inert gas is fed into the reaction chamber, and a carbon atom buffer layer is prepared on the SiC substratesilicon face; and the SiC substrate on which the carbon atom buffer layer is formed is arranged in a microwave plasma chemical vapor deposition furnace chamber, carbon gas is fed with hydrogen serving as carrier gas, and plasma is stimulated to grow graphene on the buffer layer. The graphene prepared through the method can be directly manufactured into a device without transferring or following treatment, and device preparation is facilitated; by means of the application of the plasma, the thermal stress caused by a reaction temperature and the high temperature is reduced, preparation of thegraphene is more controllable, application of the graphene device is facilitated, the reaction time is effectively shortened, and the reaction rate is accelerated; and the carbon atom buffer layer serves as a middle layer, the defect that in a pyrolysis method, the migration rate of the graphene is reduced by the buffer layer is avoided, and the graphene quality is optimized.

Description

technical field [0001] The invention relates to the technical field of semiconductor thin film materials, in particular to a method for preparing graphene based on microwave plasma chemical vapor deposition. Background technique [0002] Graphene is composed of single layer sp 2 A new type of two-dimensional material composed of carbon atoms with a hexagonal honeycomb lattice structure, which has excellent electrical, thermal, and mechanical properties, is expected to be widely used in ultra-high-speed computer chips, optoelectronic devices, sensors, fuel cells, etc. It is considered to be one of the candidate materials for microelectronic technology to replace silicon in the post-CMOS era. In order to realize the expected application of graphene, the preparation of high-quality graphene wafers is very important. [0003] There are two main methods for the preparation of graphene, one is SiC pyrolysis, and the other is CVD. The SiC pyrolysis method releases silicon atoms ...

AI Technical Summary

Problems solved by technology

Although the method of combining internal and external carbon sources in the prior art avoids the problems of the two common methods to a certain extent, the method needs to deposit metal during the growth process and remove the metal by etching after the growth, and the process is relatively complicated.

Although Michon and Strupinski et al. used hot wall CVD to directly prepare graphene on SiC, the growth temperature of graphene is relatively high, which may reduce the quality of graphene, such as introducing stress and topological defects.

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