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Preparation method of two-dimensional hydroxylated boron nitride

A technology of boron nitride and hydroxylation, applied in chemical instruments and methods, nitrogen compounds, inorganic chemistry, etc., can solve the problems of lack of active groups, limited improvement effect, poor dispersion, etc., and achieve simple preparation, improved dispersion performance, low cost effect

Inactive Publication Date: 2019-04-09
YANCHENG TEACHERS UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, boron nitride has stable chemical properties and lacks active groups on the surface, so its dispersion in solvents is poor, which greatly limits the effect of boron nitride on the performance of composite materials.

Method used

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  • Preparation method of two-dimensional hydroxylated boron nitride
  • Preparation method of two-dimensional hydroxylated boron nitride
  • Preparation method of two-dimensional hydroxylated boron nitride

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] (1) Put sodium amide, ammonium fluoroborate and nickel with a molar ratio of 0.225:0.0283:0.0139 into the autoclave, flush with nitrogen as a protective gas, and rise from room temperature to 600°C at a rate of 10°C / min. Maintain at 600°C for 14h.

[0022] (2) After washing the product with concentrated hydrochloric acid and deionized water, dry it in a vacuum oven for subsequent use.

[0023] (3) Trigonal boron nitride and ammonium bicarbonate with a mass ratio of 1:2 were mixed and put into a ball mill jar for ball milling for 6 hours.

[0024] (4) The product is placed in an environment of 600°C, and the ammonium bicarbonate is decomposed into gas to obtain two-dimensional boron nitride powder.

[0025] (5) Two-dimensional boron nitride powder and 5 mmol / mL sodium hydroxide aqueous solution were mixed and added into a hydrothermal kettle, and heated at 120° C. for 12 hours to obtain hydroxylated boron nitride.

[0026] image 3 The transmission electron microscope...

Embodiment 2

[0028] (1) Put sodium amide, ammonium fluoroborate and nickel with a molar ratio of 0.225:0.0283:0.0139 into the autoclave, flush with nitrogen as a protective gas, and rise from room temperature to 600°C at a rate of 10°C / min. Maintain at 600°C for 18h.

[0029] (2) After washing the product with concentrated hydrochloric acid and deionized water, dry it in a vacuum oven for subsequent use.

[0030] (3) Trigonal boron nitride and ammonium bicarbonate with a mass ratio of 1:2 were mixed and put into a ball mill jar for ball milling for 6 hours.

[0031] (4) The product is placed in an environment of 600°C, and the ammonium bicarbonate is decomposed into gas to obtain two-dimensional boron nitride powder.

[0032] (5) Two-dimensional boron nitride powder and 5 mmol / mL sodium hydroxide aqueous solution were mixed and added into a hydrothermal kettle, and heated at 120° C. for 12 hours to obtain hydroxylated boron nitride.

Embodiment 3

[0034] (1) Put sodium amide, ammonium fluoroborate and nickel with a molar ratio of 0.225:0.0283:0.0139 into the autoclave, flush with nitrogen as a protective gas, and rise from room temperature to 600°C at a rate of 10°C / min. Maintain at 600°C for 14h.

[0035] (2) After washing the product with concentrated hydrochloric acid and deionized water, dry it in a vacuum oven for subsequent use.

[0036] (3) Trigonal boron nitride and ammonium bicarbonate with a mass ratio of 1:10 were mixed and put into a ball mill jar for ball milling for 6 hours.

[0037] (4) The product is placed in an environment of 600°C, and the ammonium bicarbonate is decomposed into gas to obtain two-dimensional boron nitride powder.

[0038] (5) Two-dimensional boron nitride powder and 5 mmol / mL sodium hydroxide aqueous solution were mixed and added into a hydrothermal kettle, and heated at 120° C. for 12 hours to obtain hydroxylated boron nitride.

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Abstract

The invention provides a preparation method of two-dimensional hydroxylated boron nitride. The preparation method comprises the following steps: carrying out heating reaction by using sodium amide andammonium borofluoride as reaction precursors and spongy nickel as a catalyst to obtain trigonal boron nitride; mixing the trigonal boron nitride powder with ammonium bicarbonate, then putting into aball-milling tank for ball milling, carrying out high-temperature treatment to obtain two-dimensional boron nitride powder, mixing the two-dimensional boron nitride powder with a sodium hydroxide aqueous solution, adding to a hydrothermal kettle, and carrying out heating reaction to obtain the hydroxylated boron nitride. The two-dimensional boron nitride nanosheets arrayed in the ABC manner and obtained by using the preparation method to peel the trigonal boron nitride has the advantages that sheet layers are more easily peeled off; the surface of the boron nitride is modified with a hydroxylgroup, which can greatly improve the dispersing performance of the boron nitride in a solution. The preparation method has the characteristics of being simple in preparation, low in cost and easy forindustrial mass production.

Description

technical field [0001] The invention relates to the field of preparation of two-dimensional hydroxylated boron nitride, in particular to a method for preparing two-dimensional hydroxylated boron nitride nanosheets from trigonal boron nitride. Background technique [0002] Trigonal boron nitride has high chemical stability, and its anti-oxidation temperature in the air is close to 900 ° C. It is an excellent high-temperature refractory material; trigonal boron nitride also has high resistivity, and its thin film can be used as an insulating film for electronic devices; in addition , the luminescent position of trigonal boron nitride is in the ultraviolet band, and can be used as an ultraviolet or deep ultraviolet luminescent material. In short, trigonal boron nitride crystal materials have broad application prospects in becoming ideal substrates and heat sink materials for high-temperature, high-power, and high-speed semiconductor devices due to their wide band gap, high ther...

Claims

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Application Information

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IPC IPC(8): C01B21/064B82Y40/00
CPCC01B21/0648B82Y40/00C01P2004/24
Inventor 苗中正田利苗中明
Owner YANCHENG TEACHERS UNIV
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