A method for preparing magnetic graphene films based on chemical vapor deposition

A technology of chemical vapor deposition and magnetic graphene, which is applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of cumbersome process, doping of impurity atoms, etc., and achieve great application potential and surface morphology adjustable effect

Active Publication Date: 2021-01-26
NANJING INST OF TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, there are few reports on metal atom lattice doping graphene, and graphene oxide doping method is mainly used to prepare metal-doped graphene powder, but this method is cumbersome and the prepared graphene will also be doped with some different materials. impurity atoms

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for preparing magnetic graphene films based on chemical vapor deposition
  • A method for preparing magnetic graphene films based on chemical vapor deposition
  • A method for preparing magnetic graphene films based on chemical vapor deposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Such as figure 1 As shown, a copper foil is provided in the reaction chamber, and at the same time, a carrier gas containing hydrogen and argon mixed gas is passed through the reaction chamber, and a solid carbon source is placed at the inlet end of the reaction chamber.

[0040] (1) Select copper foil (Alfa Aesar, 99.8% purity, 25μm thickness), soak it in acetic acid for 8-10 hours, then soak it in acetone for 20-30 minutes, and finally clean it with isopropanol.

[0041] (2) Put the solid carbon source ferrocene powder into a quartz cup located at one end of the gas source.

[0042] (3) Pass 10% H 2 / Ar mixed gas, the flow rate is 400sccm, and the copper foil is annealed at 1050°C for 1h. Then adjust the air flow to 600 sccm, and keep the copper foil temperature at 1030°C. Then heat the polystyrene so that its temperature rises linearly at 160-190° C. at a rate of 0.75° C. / min to complete the volatilization control of the amount of carbon source. After 40min of de...

Embodiment 2

[0049] In order to better control the volatilization concentration of the carbon source, the quartz cup containing the ferrocene powder was packaged with copper foil to limit the volatilization area and gas outlet aperture of the carbon source. Then the gas flow after the annealing of the copper foil in Example 1 was adjusted to 700 sccm, and the temperature of the copper foil was kept at 1030° C. unchanged. At the same time, the carbon source ferrocene was heated to 220° C., and after 30 minutes of deposition, the iron-doped graphene was prepared. Then repeat the process of embodiment 1. By controlling the deposition time, the growth process of iron-doped graphene samples from hexagonal domains to continuous films can be observed.

[0050] Example results: the prepared iron-doped graphene is a uniform few-layer graphene, and the Raman spectrum is as follows Figure 5 shown. Scanning electron micrographs of hexagonal graphene domains visualized on copper foil, as Figure 6...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
carrier mobilityaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a method for preparing magnetic graphene films based on chemical vapor deposition. Ferrocene is used as a solid carbon source, a container containing the solid carbon source is placed at an air inlet end of a tubular furnace, a position region where the carbon source is located is heated by a heating source so as to form a region where the carbon source can stably volatilize, and the temperature is controlled to be 160-250 DEG C. Cu is chosen as a substrate, the reaction temperature is controlled to be 900-1060 DEG C, hydrogen and argon are used as carrier gas, and gasconcentration and total gas flow are adjusted, so that high-Fe-doping-concentration graphene films are generated. According to the method for preparing the magnetic graphene films based on the chemical vapor deposition, solid ferrocene is used as the carbon source, and high-Fe-doping-concentration graphene films are synthesized in one step. Meanwhile, the introduction of magnetic iron atoms opensup a new direction of preparation and synthesis of CVD magnetic grapheme and provides a material basis for application of graphene-based devices in spintronics.

Description

technical field [0001] The invention relates to the field of new materials, in particular to a method for preparing a magnetic graphene film based on a chemical vapor deposition method. Background technique [0002] In recent years, two-dimensional materials are becoming an important research hotspot in the fields of materials science and condensed matter physics. Graphene is a new carbonaceous material with a two-dimensional honeycomb structure closely packed with a single carbon atomic layer, in which carbon atoms are periodically arranged in the plane of graphene in the form of six-membered rings, and adjacent carbon atoms form δ through sp2 hybridization. The remaining Pz orbital electrons form delocalized π bonds in the direction perpendicular to the plane, and the π electrons can move freely in the plane, making graphene have excellent electrical properties. Graphene carrier mobility can reach 15000cm at room temperature 2 / V·s, so that it has very broad prospects in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/26C23C16/56C23C16/02
CPCC23C16/01C23C16/0209C23C16/26C23C16/56
Inventor 吴军杨东阳吕诚姚林万建国
Owner NANJING INST OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap