Gallium nitride-based film on a flexible polyimide substrate and preparation method thereof

Abstract

The invention belongs to the field of III group nitride film and device manufacturing, and provides a gallium nitride base film on a flexible polyimide substrate and a preparing method of the gallium nitride base film. Specifically, polyimide serves as the substrate, a first silicon oxide layer, a silicon nitride layer and a second silicon oxide layer are sequentially prepared on the polyimide substrate through an ECR-PEMOCVD method, then a Ni layer is prepared on the second silicon oxide layer through a magnetron sputtering method, a graphene layer is prepared on the interface of the Ni layer and the second silicon oxide layer through the ECR-PEMOCVD method, then, the Ni layer is removed through a wet etching method, and finally, an AlxGayIn1-x-yN buffering layer and an epitaxial layer are sequentially prepared on the graphene layer through the ECR-PEMOCVD method. A prepared AlxGayIn1-x-yN film can be used for preparing InGaN solar cells, AlGaN ultraviolet detectors, GaN film thin film transistors and other flexible devices.

Description

technical field [0001] The invention belongs to the field of Group III nitride thin film and device manufacturing, in particular to a gallium nitride-based thin film on a polyimide substrate and a preparation method thereof, specifically using polyimide (Polyimide, PI) as the substrate, first of all Electron cyclotron resonance-plasma enhanced metal-organic chemical vapor deposition (ECR-PEMOCVD) method was used to sequentially prepare the first silicon oxide layer, silicon nitride layer, and second silicon oxide layer on the polyimide substrate, followed by magnetron A Ni layer was prepared on the second silicon oxide layer by sputtering method, and then a graphene layer was prepared on the interface between the Ni layer and the second silicon oxide layer by ECR-PEMOCVD method, and then the Ni layer was removed by wet etching method, and finally ECR was used to - PEMOCVD method sequentially prepares Al on the graphene layer x Ga y In 1-x-y N buffer layer and Al x Ga y In...

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Problems solved by technology

[0004] However, at present, metal organic chemical vapor deposition (MOCVD) method is mainly used in industry to grow Al x Ga y In 1-x-y The growth of N thin films and devices usually requires a high temperature of about 1050°C, while the temperature resistance of polyimide substrates generally does not exceed 550°C, so the preparation of Al on polyimide substrates x Ga y In 1-x-y N thin films require a low-temperature growth method. On the other hand, polyimide cannot block the diffusion of water and oxygen, and polyimide is a non-single crystal substrate, so it is difficult to directly grow Al with high crystal quality. x Ga y In 1-x-y N thin films are therefore required on polyimide substrates with Al x Ga y In 1-x-y A suitable water and oxygen barrier layer and an intermediate layer material for epitaxy are inserted between the N films

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