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Tantalum oxide-protected p-type silicon photolysis water hydrogen production electrode and preparation method thereof

A technology of tantalum oxide and tantalum pentoxide, which is applied to electrodes, electrolytic components, electrolytic processes, etc., can solve the problems of heavy doping, insufficient photo-generated voltage of single-crystal silicon photocathode, instability, etc., and achieves good repeatability and improved Photolysis of water for hydrogen production activity and the effect of enhancing stability

Active Publication Date: 2021-02-02
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The purpose of the present invention is to overcome the deficiencies of the prior art, to provide a P-type silicon photolysis water hydrogen production electrode protected by tantalum oxide and its preparation method. The problem is to carry out heavy doping treatment on the surface of the silicon electrode, and achieve good photocatalytic performance after loading the platinum additive, and use the aluminum-doped zinc oxide transparent protective interface layer and the tantalum pentoxide thin film protective layer to further improve the stability of the electrode

Method used

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  • Tantalum oxide-protected p-type silicon photolysis water hydrogen production electrode and preparation method thereof
  • Tantalum oxide-protected p-type silicon photolysis water hydrogen production electrode and preparation method thereof
  • Tantalum oxide-protected p-type silicon photolysis water hydrogen production electrode and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] (1) The surface of the silicon wafer is heavily doped

[0057] a) After the silicon wafer is processed by RCA cleaning technology, it is blown dry with nitrogen gas for later use;

[0058] b) Preparation of silica latex: Take 15mL tetraethyl orthosilicate and mix with 33mL ethanol, heat to 60°C, and slowly add 2mL of 0.064% hydrochloric acid while stirring. The solution is heated to 70°C, stirred continuously, and kept warm for 2 hours to obtain the dopant solvent latex. After the preparation is completed, put it in the refrigerator at 0-5°C, and seal it for later use;

[0059] c) Phosphorus-containing dopant preparation: Take 0.0934g of phosphorus pentoxide, dissolve it in 2.5mL of silica latex, mix it evenly by ultrasonic, the dopant concentration is 0.0374mg / L, seal it for later use;

[0060] d) Spin-coating doping: Take 400 μL of phosphorus-containing dopant, set the spin-coater speed at about 3500 rpm, and spin-coating time for 30s. After the color of the film on ...

Embodiment 2

[0068] (1) The surface of the silicon wafer is heavily doped

[0069] a) After the silicon wafer is processed by RCA cleaning technology, it is blown dry with nitrogen for standby;

[0070] b) The preparation of silica latex is the same as in Example 1.

[0071] c) Phosphorus-containing dopant preparation: take 0.0934g of phosphorus pentoxide, dissolve in 5mL of silica latex, mix evenly by ultrasonic, the dopant concentration is 0.0187mg / L, and seal it for later use;

[0072] d) Spin-coating doping is the same as that in Example 1.

[0073] e) High-temperature roasting is the same as in Example 1.

[0074] (2) The preparation of the protective layer is the same as in Example 1.

[0075] (3) The deposition of platinum auxiliary agent is the same as that in Example 1.

Embodiment 3

[0077] (1) The surface of the silicon wafer is heavily doped

[0078] a) After the silicon wafer is processed by RCA cleaning technology, it is blown dry with nitrogen for standby;

[0079] b) The preparation of silica latex is the same as in Example 1.

[0080] c) Phosphorus-containing dopant preparation: take 0.1868g of phosphorus pentoxide, dissolve it in 2.5mL of silicon oxide latex, mix it uniformly by ultrasonic, the dopant concentration is 0.0747mg / L, and seal it for later use;

[0081] d) Spin-coating doping is the same as that in Example 1.

[0082] e) High-temperature roasting is the same as in Example 1.

[0083] (2) The preparation of the protective layer is the same as in Example 1.

[0084] (3) The deposition of platinum auxiliary agent is the same as that in Example 1.

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Abstract

The invention discloses a p-type silicon photolysis water hydrogen production electrode protected by tantalum oxide and a preparation method thereof, including a p-type silicon substrate heavily doped with phosphorus on the surface, an outer protective layer of tantalum pentoxide and a platinum promoter; Substrate surface heavy doping treatment, tantalum pentoxide protective layer deposition, and platinum auxiliary agent loading are composed of three steps. The invention effectively realizes the heavy doping of the surface of the silicon substrate, improves the starting potential of the photoelectrochemical cell for photolysis of water to produce hydrogen, and improves the stability of the material due to the instability of the silicon-based photocathode in aqueous solution. The preparation method of the invention has simple operation process, strong controllability, stable photoelectric catalytic performance and good repeatability.

Description

technical field [0001] The invention relates to the field of semiconductor electrodes of photoelectrochemical cells, in particular to a novel composite silicon electrode (pn + Si / Ta 2 o 5 / Pt) structure design and preparation method. Background technique [0002] Photocatalytic water splitting hydrogen production technology can effectively convert solar energy into hydrogen energy, which is one of the important ways to solve energy crisis and environmental problems. Si has excellent light absorption ability (wavelength less than 930nm) and charge transfer ability (1600 and 400cm for electrons and holes, respectively 2 the s -1 V -1 ), under the condition of full spectrum and no sacrificial agent, a series of breakthroughs have been made in the photolysis of water by Si electrode, which has attracted widespread attention in the industry. [1] . Moreover, Si, as an element second only to oxygen in the earth's crust, is relatively cheap. [0003] However, due to the smal...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25B1/04C25B1/55C25B11/059C25B11/081
CPCC25B1/04C25B1/55C25B11/051C25B11/059C25B11/091Y02E60/36Y02P20/133
Inventor 巩金龙刘珊珊王拓李慧敏李澄澄罗志斌
Owner TIANJIN UNIV
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