Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A preparation method of inorganic perovskite thin film and application in solar cell

A perovskite and thin film technology, which is applied in the field of inorganic perovskite thin film preparation, can solve the problems of difficult precise control of active layer morphology and band gap, poor spin-coating film spreading, poor repeatability, etc., achieving excellent Reproducibility and effects of increased stability, increased efficiency, increased solubility

Inactive Publication Date: 2019-01-04
BEIJING UNIV OF CHEM TECH
View PDF6 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Currently solution-phase deposited CsPbI 2 Br thin films are divided into one-step method and two-step method, and the one-step method can solve the problem of CsPbI 2 However, due to the low solubility of CsBr in the conventional perovskite solvent DMF, the thickness of the spin-coated film is thinner, the spreadability of the spin-coated film is not good, and there are more pinholes, so the device efficiency Low and poor reproducibility; the two-step method is difficult to precisely control the active layer morphology and band gap due to the existence of ion exchange
And the prepared devices have low efficiency and poor reproducibility

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A preparation method of inorganic perovskite thin film and application in solar cell
  • A preparation method of inorganic perovskite thin film and application in solar cell
  • A preparation method of inorganic perovskite thin film and application in solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] 1. CsPbI with CsI additive 2 Preparation of Br perovskite solution

[0036] Add 1mmol of lead iodide and 1mmol of cesium bromide into the sample bottle according to the molar ratio of 1:1, then add 1mL of DMSO, put it on a magnetic stirrer, heat and stir at 60°C for 1h, until the solution is completely dissolved, weigh 0.8mmol Excess CsI was added to the solution as an additive, and stirring was continued at 60 °C for 1.5 h to obtain CsPbI containing CsI additive 2 Br perovskite solution.

[0037] 2. CsPbI 2 Preparation of Br perovskite thin films

[0038] Spin-coat the perovskite solution prepared in step 1 on the ITO / SnO2 substrate, the spin-coating speed is 1500rpm 10s, 5000rpm 30s, and anti-solvent chlorobenzene is added dropwise in the last sixth second, and then the film is placed on the heating platform for 180 ℃ annealing for 1 min to obtain CsPbI 2 Br perovskite film

[0039] 3. Preparation of carbon-based inorganic mixed halogen perovskite solar cell dev...

Embodiment 2

[0048] 1. CsPbI with CsI additive 2 The Br perovskite solution was prepared as described in Example 1.

[0049] 2. CsPbI 2 The preparation of Br perovskite thin film is as described in Example 1.

[0050] 3. The preparation of the carbon-based inorganic mixed halogen perovskite solar cell device is as described in Example 1.

[0051] Wherein, the doping amount of CsI is changed to 1 mmol. The open circuit voltage of the obtained device is 1.10, the short circuit current is 14.71, the fill factor is 53.04, and the photoelectric conversion efficiency is 8.59%.

Embodiment 3

[0053] 1. CsPbI with CsI additive 2 The Br perovskite solution was prepared as described in Example 1.

[0054] 2. CsPbI 2 The preparation of Br perovskite thin film is as described in Example 1.

[0055] 3. The preparation of the carbon-based inorganic mixed halogen perovskite solar cell device is as described in Example 1.

[0056] The annealing temperature of the inorganic perovskite film was changed to 150°C for 10 min. The open circuit voltage of the obtained device was 1.13, the short circuit current was 13.45, the fill factor was 63.89, and the photoelectric conversion efficiency was 9.74%.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a preparation method of an inorganic perovskite thin film and an application in a solar cell, belonging to the technical field of solar cells. Excess cesium iodide is added asan additive to an inorganic perovskite solutio to deposite a high-quality inorganic perovskite film, the obtained thin film is used as light absorbing layer in the solar cell. The method can obtain the inorganic perovskite thin film with low porosity, uniform and compact, and greatly reduce the annealing temperature of the thin film and greatly reduce the energy consumption. The photovoltaic performance of inorganic halide perovskite solar cells can be greatly improved by applying the device to perovskite solar cells, and the prepared device has excellent environmental stability and repeatability, and is suitable for large-scale industrial production. As that technological condition such as the addition amount of the cesium iodide additive, the thickness of the active layer, the anneal temperature and the like are optimized, the invention is applied to a carbon-based all-inorganic perovskite solar cell, the photoelectric conversion efficiency can exceed 10%, and the photoelectric conversion efficiency has good stability.

Description

technical field [0001] The invention belongs to the technical field of perovskite solar cells, and in particular relates to a method for preparing an inorganic perovskite thin film and its application in solar cells. Background technique [0002] With the increasing energy problems and environmental pollution problems, people's demand for clean and renewable energy is growing rapidly. Solar energy is gradually attracting people's attention because of its abundant resource reserves and complete cleanliness, so solar cells as photoelectric conversion devices have become the focus of attention. At present, silicon solar cells occupy a dominant position in the market. Although the photoelectric conversion efficiency of silicon cells is high, their production costs are high. In recent years, perovskite solar cells based on the characteristics of high efficiency, solution processing, low cost and large area have attracted widespread attention. However, conventional perovskite so...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L31/18
CPCH01L31/18H01L31/1864Y02E10/50Y02P70/50
Inventor 孟祥悦侯杰陈英初周军帅陶霞
Owner BEIJING UNIV OF CHEM TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com