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Magnetron sputtering preparation method of tin titanium film cathode of lithium ion battery

A lithium-ion battery, magnetron sputtering technology, applied in battery electrodes, sputtering plating, ion implantation plating, etc., to achieve the effects of reducing production costs, simplifying the preparation process, and shortening the annealing time

Inactive Publication Date: 2011-10-12
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, there is no report on the preparation of tin-titanium thin films by co-sputtering.

Method used

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  • Magnetron sputtering preparation method of tin titanium film cathode of lithium ion battery
  • Magnetron sputtering preparation method of tin titanium film cathode of lithium ion battery
  • Magnetron sputtering preparation method of tin titanium film cathode of lithium ion battery

Examples

Experimental program
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Effect test

Embodiment example 1

[0035] Adopt sequential sputtering method to prepare the tin-titanium thin film negative electrode of lithium ion battery, its preparation method and steps are as follows:

[0036] 1. Install the cleaned Cu foil at the sample position in the magnetron sputtering chamber, and then install the pure Sn target and pure Ti target. The purity of the two targets is 99.99%. Move the sample to the sample position facing the Sn target by revolution. The sample rotation speed was 20 rpm.

[0037] 2. Then vacuum the cavity to 1.0×10 -3 Below Pa, 99.999% Ar gas is introduced to keep the pressure in the sputtering chamber at 0.5Pa.

[0038] 3. Close the baffle on the metal Sn target, apply a DC voltage of 1050V to the target with a DC sputtering power supply, control the current at 0.22A, and clean the surface of the target by self-sputtering after ignition.

[0039] 4. After the self-sputtering time of the Sn target reaches 5 minutes, open the baffle of the target.

[0040] 5. After th...

Embodiment example 2

[0050] Adopt sequential sputtering method to prepare the titanium-tin laminated film negative electrode of lithium-ion battery, its preparation method and steps are as follows:

[0051] 1. Install the cleaned Cu foil at the sample position in the magnetron sputtering chamber, and then install the pure Sn target and pure Ti target. The purity of the two targets is 99.99%. Move the sample to the sample position facing the Ti target by revolution. The sample rotation speed is 20 rpm.

[0052] 2. Then vacuum the cavity to 1.0×10 -3 Below Pa, 99.999% Ar gas is introduced to keep the pressure in the sputtering chamber at 0.5Pa.

[0053] 3. Close the baffle on the metal Ti target, apply a 420V DC voltage on the target with a DC sputtering power supply, control the current at 0.18A, and clean the surface of the target by self-sputtering after ignition.

[0054] 4. After the self-sputtering time of the Ti target reaches 5 minutes, open the baffle of the target.

[0055] 5. After th...

Embodiment example 3

[0065] The sequential sputtering method is used to prepare the four-layer titanium-tin film electrode, and it is subjected to thermal annealing treatment. The preparation method and steps are as follows:

[0066] 1. Install the cleaned stainless steel sheet at the sample position in the magnetron sputtering chamber, and then install the pure Sn target and the pure Ti target. The purity of the two targets is 99.99%. Move the sample to the sample position facing the Ti target by revolution. The sample rotation speed is 20 rpm.

[0067] 2. Then vacuum the cavity to 1.0×10 -3 Below Pa, 99.999% Ar gas is introduced to keep the pressure in the sputtering chamber at 0.5Pa.

[0068] 3. Close the baffle plate on the metal Ti target, apply a voltage of 510V to the target with a radio frequency sputtering power supply, control the current at 0.23A, and use self-sputtering to clean the surface of the target after ignition.

[0069] 4. After the self-sputtering time of the Ti target rea...

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Abstract

The invention belongs to the field of a chemical power source, and particularly relates to a magnetron sputtering preparation method of a tin titanium film cathode of a lithium ion battery. The method is characterized by comprising the following steps: alternately sputtering or cosputtering pure tin and pure titanium targets to prepare a tin titanium film, and then maintaining annealing treatment at a temperature ranging from room temperature to 300 DEG C for 0-6 hours. In the two-target alternate sputtering method, an Sn / Ti or Ti / Sn laminated film can be formed, when the number of times of alternation is more than one, on the basis of the material which is sputtered firstly. The method disclosed by the invention has the advantages of simple process and low cost, and is beneficial to environment protection; and the prepared film is used as a cathode of a lithium ion battery, and has high specific capacity and excellent cycle performance.

Description

technical field [0001] This patent relates to the preparation method of electrode materials in the field of chemical batteries, in particular to the preparation of tin-titanium thin film negative electrodes for lithium-ion batteries. Background technique [0002] Lithium-ion batteries, as a device that can efficiently realize the mutual conversion between chemical energy and electrical energy, have been widely used in various industries. The application of lithium-ion batteries can be seen in micro-electro-mechanical systems (microelectro-mechanical systems) with dimensions on the order of microns, new energy vehicles, and energy storage peak-shaving power stations. Using advanced electrode material systems to improve the energy density of lithium-ion batteries is the unremitting pursuit of many researchers and manufacturers. The negative electrode material of commercial lithium-ion batteries is mainly graphitized carbon material, and the theoretical specific capacity is 37...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/14H01M4/1395
CPCY02E60/10
Inventor 李晶泽霍文培刘凯王毅周爱军
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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