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Composition for forming resist underlayer film with improved film density

A technology of resist lower layer and composition, which is applied in the direction of originals for photomechanical processing, photosensitive materials for photomechanical equipment, photoplate making process of patterned surface, etc., which can solve the problem of difficult to obtain resist pattern film thick and other issues

Pending Publication Date: 2018-12-21
NISSAN CHEM IND LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it is difficult to obtain a resist pattern film thickness sufficient for substrate processing, and it is necessary to make not only the resist pattern, but also the resist underlayer film formed between the resist and the semiconductor substrate to be processed to have The process of the function of the mask

Method used

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  • Composition for forming resist underlayer film with improved film density
  • Composition for forming resist underlayer film with improved film density
  • Composition for forming resist underlayer film with improved film density

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0104] 9.00 g of carbazole (manufactured by Tokyo Chemical Industry Co., Ltd.), 6.47 g of p-tolualdehyde (manufactured by Tokyo Chemical Industry Co., Ltd.), 38.52 g of propylene glycol monomethyl ether acetate, and methanesulfonic acid were added to a 100 mL two-necked flask. (manufactured by Tokyo Chemical Industry Co., Ltd.) 1.04 g. It was then heated up to 150°C and stirred at reflux for about 1.5 hours. After completion of the reaction, it was diluted with 18.73 g of propylene glycol monomethyl ether acetate. This solution was added dropwise to a methanol solution for reprecipitation. The obtained precipitate was subjected to suction filtration, and the filtrate was dried under reduced pressure at 60° C. overnight. Thus, 12.2 g of powdery resin was obtained. The resulting polymer corresponds to formula (1-1). The weight average molecular weight Mw measured by GPC in terms of polystyrene was 82,700, and the polydispersity Mw / Mn was 13.5.

Synthetic example 2

[0106] Into a 100 mL two-necked flask, 8.00 g of carbazole (manufactured by Tokyo Chemical Industry Co., Ltd.), 7.19 g of p-formylbenzoic acid (manufactured by Tokyo Chemical Industry Co., Ltd.), 18.79 g of propylene glycol monomethyl ether acetate, propylene glycol monomethyl 18.79 g of base ether and 0.92 g of methanesulfonic acid (manufactured by Tokyo Chemical Industry Co., Ltd.). It was then heated up to 150°C and stirred at reflux for about 3.5 hours. After completion of the reaction, it was diluted with 22.25 g of propylene glycol monomethyl ether acetate. This solution was added dropwise to a methanol solution for reprecipitation. The obtained precipitate was subjected to suction filtration, and the filtrate was dried under reduced pressure at 60° C. overnight. Thus, 13.7 g of powdery resin was obtained. The resulting polymer corresponds to formula (1-2). The weight average molecular weight Mw measured by GPC in terms of polystyrene was 24,800, and the polydispersi...

Synthetic example 3

[0108]在100mL二口烧瓶中加入咔唑(东京化成工业株式会社制)8.00g、对甲酰基苯甲酸甲基酯(东京化成工业株式会社制)7.86g、丙二醇单甲基醚乙酸酯24.14g、甲磺酸(东京化成工业株式会社制)0.23g。然后加热直到150℃,回流搅拌约2小时。反应结束后,用丙二醇单甲基醚乙酸酯39.08g稀释。将该溶液滴加到甲醇溶液中,进行了再沉淀。将所得的沉淀物进行抽滤,将滤物在60℃减压干燥一晚。从而获得了粉末的树脂13.3g。所得的聚合物相当于式(1-3)。通过GPC以聚苯乙烯换算测定的重均分子量Mw为4,600,多分散度Mw / Mn为3.16。

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Abstract

[Problem] To provide a resist underlayer film formation composition which is for forming a resist underlayer film that is high in film density, hardness, Young's modulus, and wiggling resistance (resistance of pattern to bending) and hence has high etching resistance. [Solution] A resist underlayer film formation composition including a novolak resin that has a repeating unit structure representedby the following formula (1). (In formula (1), group A and group B are organic groups which each have an aromatic ring, a fused aromatic ring, or a fused aromatic heterocycle and which have a structure in which two or more, same or different, mono- or divalent chemical groups selected from the group consisting of chemical groups (a) that cause an increase in mass upon oxidation, chemical groups (b) that form a crosslink upon heating, and chemical groups (c) that induce phase separation during curing have replaced hydrogen atoms on the ring(s) contained in the group A and / or the group B.) Thecomposition further includes a crosslinking agent and an acid and / or acid generator. A production process is provided in which the resist underlayer film formation composition is applied to a semiconductor substrate and burned to obtain a resist underlayer film.

Description

technical field [0001] The present invention relates to a composition for forming a resist underlayer film having an increased film density, and a method of manufacturing a semiconductor device using the composition. Background technique [0002] Polymerization of polymer resins has been extensively studied, and polymers containing ring structures such as novolacs are widely used in fine fields such as photoresists and general fields such as automobiles and housing components. In addition, the above-mentioned polymers are also high in heat resistance and can be applied to special applications, so they are currently being developed all over the world. Generally speaking, monomers containing a ring structure include structures such as benzene, naphthalene, anthracene, pyrene, and fluorene, and these monomers are known to form novolaks with monomers having aldehyde groups. On the other hand, it became clear that carbazole having a structure similar to that of fluorene also exh...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/11C08G12/08C08G12/26G03F7/26
CPCC08G12/08C08G12/26G03F7/094H01L21/0332G03F1/80G03F7/11G03F7/70691H01L21/0337G03F7/26H01L21/0271
Inventor 德永光大野正司坂本力丸桥本圭祐
Owner NISSAN CHEM IND LTD
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