Preparation method of aluminum-silicon composite material for electronic packaging
A composite material and electronic packaging technology, which is applied in the field of preparation of aluminum-silicon composite materials for electronic packaging, can solve the problems of low processing performance, large silicon phase size, and low cooling rate, and achieve controllable thermal expansion coefficient and high thermal conductivity , the effect of low density
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Embodiment 1
[0038] The preparation method of Al-22% Si electronic package composite material, comprises the following steps:
[0039] (1) The raw materials are monocrystalline silicon and pure aluminum (purity 99.95%), and the alloy components are proportioned according to weight percentage. The proportioning components are: silicon: 22%, aluminum: 78%;
[0040] (2) In an intermediate frequency induction furnace, heat up to 780°C to melt the aluminum, and then rapidly heat up to 1200-1350°C after complete melting, add silicon with a good weight, and use a graphite rod to fully stir for 5-15 minutes, then mix 30% NaCl+47 %KCl+23% cryolite is placed in a graphite cover, stretched into the bottom of the melt for slagging, degassed with hexachlorohexane, cooled to 850-950°C, and allowed to stand for 10 minutes;
[0041] (3) The tundish crucible is heated to 700-800°C by resistance, and kept warm for 30 minutes, pour the alloy melt into the tundish crucible, turn on the atomizing gas source, a...
Embodiment 2
[0048] The preparation method of Al-50% Si electronic packaging composite material, comprises the following steps:
[0049] (1) The raw materials are monocrystalline silicon and pure aluminum (purity 99.95%), and the alloy components are proportioned according to weight percentage. The proportioning components are: silicon: 50%, aluminum: 50%;
[0050] (2) In an intermediate frequency induction furnace, heat up to 860°C to melt the aluminum, and then rapidly heat up to 1300-1450°C after complete melting, add silicon with a good weight, use graphite rods to fully stir for 5-15min, and mix 30% NaCl+47 %KCl+23% cryolite is placed in a graphite cover, extended into the bottom of the melt for slagging, and degassed with hexachlorohexane, cooled to 950-1100°C, and allowed to stand for 15 minutes;
[0051] (3) The tundish crucible is heated to 750-850°C by resistance, and kept warm for 30 minutes, pour the alloy melt into the tundish crucible, turn on the atomizing gas source, and at...
Embodiment 3
[0058] The preparation method of Al-70% Si electronic package composite material, comprises the following steps:
[0059] (1) The raw materials are monocrystalline silicon and high-purity aluminum (purity 99.95%), and the alloy components are proportioned according to weight percentage. The proportioning components are: silicon: 70%, aluminum: 30%;
[0060] (2) In an intermediate frequency induction furnace, heat up to 810°C to melt the aluminum, then rapidly heat up to 1400-1600°C after complete melting, add silicon with a good weight, use graphite rods to fully stir for 5-15min, and mix 30% NaCl+47 %KCl+23% cryolite is placed in a graphite cover, extended into the bottom of the melt for slagging, and degassed with hexachlorohexane, cooled to 1300-1450°C, and allowed to stand for 12 minutes;
[0061] (3) The tundish crucible is heated to 800-900°C by resistance, and kept warm for 30 minutes, pour the alloy melt into the tundish crucible, turn on the atomizing gas source, and ...
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