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Preparation method of aluminum-silicon composite material for electronic packaging

A composite material and electronic packaging technology, which is applied in the field of preparation of aluminum-silicon composite materials for electronic packaging, can solve the problems of low processing performance, large silicon phase size, and low cooling rate, and achieve controllable thermal expansion coefficient and high thermal conductivity , the effect of low density

Inactive Publication Date: 2018-11-23
长沙博朗思达新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, the aluminum-silicon composite materials in the prior art are generally prepared by semi-solid molding of ingots obtained by melting and casting. Due to the low cooling rate in the melting and casting process, coarse primary silicon phases and needle-shaped eutectic silicon phases are formed in the ingots. After semi-solid forming, this structure will remain in the semi-solid formed material, thereby deteriorating the comprehensive performance of the material
Therefore, the existing aluminum-silicon composite materials for electronic packaging often have problems such as large silicon phase size and low processability.

Method used

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  • Preparation method of aluminum-silicon composite material for electronic packaging
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  • Preparation method of aluminum-silicon composite material for electronic packaging

Examples

Experimental program
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Effect test

Embodiment 1

[0038] The preparation method of Al-22% Si electronic package composite material, comprises the following steps:

[0039] (1) The raw materials are monocrystalline silicon and pure aluminum (purity 99.95%), and the alloy components are proportioned according to weight percentage. The proportioning components are: silicon: 22%, aluminum: 78%;

[0040] (2) In an intermediate frequency induction furnace, heat up to 780°C to melt the aluminum, and then rapidly heat up to 1200-1350°C after complete melting, add silicon with a good weight, and use a graphite rod to fully stir for 5-15 minutes, then mix 30% NaCl+47 %KCl+23% cryolite is placed in a graphite cover, stretched into the bottom of the melt for slagging, degassed with hexachlorohexane, cooled to 850-950°C, and allowed to stand for 10 minutes;

[0041] (3) The tundish crucible is heated to 700-800°C by resistance, and kept warm for 30 minutes, pour the alloy melt into the tundish crucible, turn on the atomizing gas source, a...

Embodiment 2

[0048] The preparation method of Al-50% Si electronic packaging composite material, comprises the following steps:

[0049] (1) The raw materials are monocrystalline silicon and pure aluminum (purity 99.95%), and the alloy components are proportioned according to weight percentage. The proportioning components are: silicon: 50%, aluminum: 50%;

[0050] (2) In an intermediate frequency induction furnace, heat up to 860°C to melt the aluminum, and then rapidly heat up to 1300-1450°C after complete melting, add silicon with a good weight, use graphite rods to fully stir for 5-15min, and mix 30% NaCl+47 %KCl+23% cryolite is placed in a graphite cover, extended into the bottom of the melt for slagging, and degassed with hexachlorohexane, cooled to 950-1100°C, and allowed to stand for 15 minutes;

[0051] (3) The tundish crucible is heated to 750-850°C by resistance, and kept warm for 30 minutes, pour the alloy melt into the tundish crucible, turn on the atomizing gas source, and at...

Embodiment 3

[0058] The preparation method of Al-70% Si electronic package composite material, comprises the following steps:

[0059] (1) The raw materials are monocrystalline silicon and high-purity aluminum (purity 99.95%), and the alloy components are proportioned according to weight percentage. The proportioning components are: silicon: 70%, aluminum: 30%;

[0060] (2) In an intermediate frequency induction furnace, heat up to 810°C to melt the aluminum, then rapidly heat up to 1400-1600°C after complete melting, add silicon with a good weight, use graphite rods to fully stir for 5-15min, and mix 30% NaCl+47 %KCl+23% cryolite is placed in a graphite cover, extended into the bottom of the melt for slagging, and degassed with hexachlorohexane, cooled to 1300-1450°C, and allowed to stand for 12 minutes;

[0061] (3) The tundish crucible is heated to 800-900°C by resistance, and kept warm for 30 minutes, pour the alloy melt into the tundish crucible, turn on the atomizing gas source, and ...

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Abstract

The invention discloses a preparation method of an aluminum-silicon composite material for electronic packaging. The preparation method is characterized by comprising the following steps of S1, preparing pure aluminum and pure silicon, and smelting aluminum-silicon alloy to obtain an aluminum-silicon alloy melt; S2, performing gas atomization powder preparation on the aluminum-silicon alloy melt,and sieving powder to obtain aluminum-silicon alloy powder; S3, performing cold briquetting on the aluminum-silicon alloy powder to obtain an aluminum-silicon alloy green compact; S4, performing semi-solid forming on the aluminum-silicon alloy green compact after cold pressing to obtain an aluminum-silicon composite material; and S5, performing annealing treatment on the aluminum-silicon compositematerial. The aluminum-silicon composite material for electronic packaging prepared by the method is fine in silicon phase size, is passivated in silicon phase corner angle, is uniformly distributedin an aluminum matrix and has good microstructure characteristics and comprehensive properties.

Description

technical field [0001] The invention relates to the field of molding and processing of electronic packaging materials, in particular to a preparation method of an aluminum-silicon composite material for electronic packaging. Background technique [0002] Traditional electronic packaging materials mainly include Cu, Al, Ti, Kovar (or Invar), W / Cu (or Mo / Cu), Al 2 o 3 etc., and its main properties are shown in Table 1. With the development of modern electronic devices in the direction of miniaturization, light weight, high operating frequency, high power density, multi-function and high reliability, traditional packaging materials are no longer competent in terms of thermal conductivity, thermal expansion coefficient matching and light weight. [0003] Table 1 Main properties of commonly used electronic packaging materials [0004] [0005] In order to meet the material performance requirements of modern highly integrated electronic devices, Western developed countries h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C1/00C22C21/02C22F1/043B22F9/08
CPCC22C21/02C22F1/043B22F9/082C22C1/12
Inventor 王日初蔡志勇
Owner 长沙博朗思达新材料科技有限公司
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