A Preparation Method for Precisely Controlling the Grain Size of Perovskite Thin Films

A grain size, perovskite technology, used in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as difficulty in monitoring and controlling perovskite grain size, and achieve excellent optoelectronic properties and dense quality. , the effect of uniform grain size

Active Publication Date: 2022-03-22
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods are still challenging to precisely control the crystallization process and grain size, and it is difficult to monitor and control the perovskite grain size.

Method used

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  • A Preparation Method for Precisely Controlling the Grain Size of Perovskite Thin Films
  • A Preparation Method for Precisely Controlling the Grain Size of Perovskite Thin Films
  • A Preparation Method for Precisely Controlling the Grain Size of Perovskite Thin Films

Examples

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Embodiment 1

[0033] A preparation method for regulating grain growth and size of perovskite film, comprising the following steps:

[0034] (1) Clean the etched ITO (indium tin oxide) conductive glass, then dry it with nitrogen to obtain a clean ITO substrate;

[0035] (2) Preparation of hole transport layer solution doped with F4-TCNQ: add 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodi Methyl p-benzoquinone (F4-TCNQ) powder, after stirring evenly, add the IPA solution containing F4-TCNQ to poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine ] (PTAA) powder, stir evenly to get the hole transport layer solution mixed with F4-TCNQ; wherein, the solid-liquid mass ratio of F4-TCNQ powder and IPA is 0.1wt%, the solid-liquid mass ratio of PTAA powder and IPA The liquid ratio is 5mg / mL;

[0036] (3) Drop the solution configured in step (2) onto the clean ITO substrate obtained in step (1), then evenly glue, and finally put the evenly glued ITO substrate on the hot stage, anneal, and obtain on the ITO sub...

Embodiment 2

[0051] A preparation method for regulating perovskite film grain growth and size, comprising the following steps:

[0052] (1) Clean the etched ITO (indium tin oxide) conductive glass, then dry it with nitrogen to obtain a clean ITO substrate;

[0053] (2) Preparation of the hole transport layer solution mixed with F4-TCNQ: add F4-TCNQ powder to IPA (isopropanol), and after stirring, add the IPA solution containing F4-TCNQ to the PTAA powder , and stir evenly to obtain a hole transport layer solution mixed with F4-TCNQ; wherein, the solid-liquid mass ratio of F4-TCNQ powder and IPA is 0.1wt%, and the solid-liquid ratio of PTAA powder and IPA is 5mg / mL;

[0054] (3) Drop the solution configured in step (2) onto the clean ITO substrate obtained in step (1), then evenly glue, and finally put the evenly glued ITO substrate on the hot stage, anneal, and obtain on the ITO substrate One deck of PTAA:F4-TCNQ thin film, the substrate obtained is recorded as ITO / PTAA:F4-TCNQ;

[0055]...

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PUM

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Abstract

The invention discloses a method for precisely regulating the grain size of a perovskite film, by adding ammonium hypophosphite into a perovskite precursor solution in different ways, and then adjusting the ammonium hypophosphite in the perovskite precursor solution Different concentration ratios can be used to control the grain size. The way that the ammonium hypophosphite is added to the perovskite precursor solution is: adding to the precursor CH 3 NH 3 I solution, or directly into the thin film PbI 2 superior. The perovskite thin film prepared by the invention is uniform and dense, has a flat surface and a large grain size.

Description

technical field [0001] The invention belongs to the technical field of photoelectric materials, and in particular relates to a preparation method for precisely regulating the grain size of a perovskite thin film. Background technique [0002] Environmental pollution and energy crisis have become challenges faced by human beings, and it is urgent to find a new clean energy source. Solar energy is clean and pollution-free, with huge reserves and inexhaustible use, making it a new type of energy with the most potential for development. The most basic unit that converts solar energy into electrical energy is the solar cell. In recent years, new solar cells using perovskite as light-absorbing materials have developed rapidly, and the conversion efficiency has been continuously improved. However, the current efficiency and the theoretical maximum (33%) are still far away. There is a large gap, and there is still a lot of room for further efficiency improvement. [0003] In gener...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/12H10K30/151Y02E10/549
Inventor 赖文勇雷刚徐巍栋黄维
Owner NANJING UNIV OF POSTS & TELECOMM
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