Long-service-life broadband multiplication type organic photoelectric detector and preparation method thereof

A photodetector and long-life technology, applied in the field of light detection, can solve problems such as poor long-term stability, short device life, corrosion of metal electrodes and active layers, etc.

Inactive Publication Date: 2018-11-13
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The preferred finishing layer in the above two patents is poly(3,4-ethylenedioxythiophene): polystyrene sulfonic acid (PEDOT:PSS), which is hygroscopic and strongly acidic, which may cause the adjacent metal The gradual erosion of electrodes and active layers leads to poor interface stability, resulting in a rapid decline in device performance, which in turn leads to poor long-term stability and short device life

Method used

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  • Long-service-life broadband multiplication type organic photoelectric detector and preparation method thereof
  • Long-service-life broadband multiplication type organic photoelectric detector and preparation method thereof
  • Long-service-life broadband multiplication type organic photoelectric detector and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0059] see figure 1 As shown, a long-lived broadband multiplied organic photodetector, including

[0060] transparent base1;

[0061] a transparent cathode 2 arranged on the transparent substrate;

[0062] a cathode modification layer 3 disposed on the transparent cathode;

[0063] an active layer 4 disposed on the cathode modification layer;

[0064] an anode modification layer 5 disposed on the active layer;

[0065] a metal anode 6 disposed on the anode modification layer;

[0066] And, an encapsulation layer 7 disposed on the metal anode.

[0067] In this embodiment, the transparent substrate is glass.

[0068] The transparent cathode is indium tin oxide (ITO).

[0069] The cathode modification layer is spin-coated ZnO; its thickness is 30 nanometers.

[0070] The active layer is a blended thin film of electron donor material and electron acceptor material with a thickness of 250 nanometers. Wherein, the electron donor material is poly(3-hexylthiophene) (P3HT);

...

Embodiment 2

[0095] Disclosed is another long-life broadband multiplication type organic photodetector preparation method, including the following steps:

[0096] Step 1-1, selecting glass as a transparent substrate, and preparing a transparent cathode on the transparent substrate;

[0097] Step 1-2, preparing a cathode modification layer on the transparent cathode;

[0098] Step 1-3, preparing an active layer on the cathode modification layer;

[0099] Step 1-4, preparing an anode modification layer on the active layer;

[0100] Step 1-5, preparing a metal anode on the anode modification layer;

[0101] Step 1-6, preparing an encapsulation layer on the anode.

[0102] specifically:

[0103] In the step 1-1, indium tin oxide (ITO) is plated on the transparent substrate, then soaked in deionized water, absolute ethanol, acetone, and isopropanol respectively, and cleaned with an ultrasonic cleaner; clean Afterwards, blow dry with nitrogen, and treat the dried substrate surface with a pl...

Embodiment 3

[0110] Disclosed is another long-life broadband multiplication type organic photodetector preparation method, including the following steps:

[0111] Step 1-1, selecting glass as a transparent substrate, and preparing a transparent cathode on the transparent substrate;

[0112] Step 1-2, preparing a cathode modification layer on the transparent cathode;

[0113] Step 1-3, preparing an active layer on the cathode modification layer;

[0114] Step 1-4, preparing an anode modification layer on the active layer;

[0115] Step 1-5, preparing a metal anode on the anode modification layer;

[0116] Step 1-6, preparing an encapsulation layer on the anode.

[0117] specifically:

[0118] In the step 1-1, indium tin oxide (ITO) is plated on the transparent substrate, then soaked in deionized water, absolute ethanol, acetone, and isopropanol respectively, and cleaned with an ultrasonic cleaner; clean Afterwards, blow dry with nitrogen, and treat the dried substrate surface with a pl...

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Abstract

The invention discloses a long-service-life broadband multiplication type organic photoelectric detector. The organic photoelectric detector adopts a reversed structure which is formed by a transparent substrate, a transparent negative electrode, a negative electrode modification layer, an active layer, a positive electrode modification layer, a metal positive electrode and a packaging layer in asequentially stacked mode. According to the organic photoelectric detector, broadband light detection can be realized, and the photoelectric multiplication response is also achieved; relatively strongweak light detection capability and better interface stability are realized; and experiments prove that the organic photoelectric detector has a long service life, and after being stored for 240 hours, the initial detection rate of 80% or above still can be kept.

Description

technical field [0001] The invention relates to the technical field of photodetection, in particular to a long-life broadband multiplication type organic photodetector and a preparation method. Background technique [0002] Organic semiconducting materials have attracted much attention because of their unique advantages, including strong absorption, solution processability, low cost, and the ability to fabricate large-area flexible devices. Like the rapidly developing photovoltaics and light-emitting diodes, organic photodetectors have also attracted much attention due to their broad spectral coverage, low noise, high detectivity, and fast response. For inorganic materials, photomultiplication is achieved by impact ionization at very high reverse bias voltages (typically 100–200 V in Si avalanche photodiodes). However, due to the large exciton binding energy of organic materials, it is very difficult to apply an electric field several orders of magnitude higher than that of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/44H01L51/48
CPCH10K30/82H10K30/88Y02E10/549Y02P70/50
Inventor 唐峰陈琪陈立桅
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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