Deformation stress sensor based on strontium niobate titanate resistive thin film

A technology of doping strontium niobium titanate and deformation stress, which is applied in the field of microelectronics, can solve the problems of inability to realize flexible functions, high power consumption, and low sensitivity, and achieve the effects of good piezoresistive effect, improved performance, and high sensitivity

Active Publication Date: 2020-02-21
XIDIAN UNIV
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the current monocrystalline silicon is mainly bulk material, it cannot realize the flexible function, and the silicon-based piezoresistive sensor requires a constant current to work, which consumes a lot of power and has low sensitivity.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Deformation stress sensor based on strontium niobate titanate resistive thin film
  • Deformation stress sensor based on strontium niobate titanate resistive thin film
  • Deformation stress sensor based on strontium niobate titanate resistive thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Embodiment 1: Fabricate a deformation stress sensor with a single-sided platinum-platinum electrode structure.

[0032] Step 1: growing a lanthanum strontium manganese oxide thin film on a strontium titanate substrate.

[0033] 1a) Put the strontium titanate substrate, the lanthanum strontium manganese oxide target, and the strontium niobate-doped strontium titanate target into the reaction chamber of the pulsed laser deposition system, and evacuate the reaction chamber until the vacuum degree reaches 1*10 -6 Below mbar;

[0034] 1b) Introduce oxygen into the reaction chamber to maintain the oxygen pressure in the reaction chamber at 0.1mbar, and set the energy density of the laser to 1.1J / cm 2 The sum frequency is 5Hz, the temperature of the substrate is set to 700°C, the laser emits laser light, and the lanthanum strontium manganese oxide target is burned 5000 times, so that the burnt out lanthanum strontium manganese oxide plasma is deposited on the strontium titana...

Embodiment 2

[0046] Embodiment 2: Fabricate a deformation stress sensor with a single-sided platinum-silver electrode structure.

[0047] Step 1: growing a lanthanum strontium manganese oxide thin film on a strontium titanate substrate.

[0048] The specific implementation of this step is the same as step 1 in Embodiment 1.

[0049] Step 2: depositing a layer of strontium niobate-doped titanate film on the lanthanum strontium manganese oxide film.

[0050] The specific implementation of this step is the same as step 2 in Embodiment 1.

[0051] Step 3: Spin-coat polymethyl methacrylate PMMA on the strontium niobate-doped titanate thin film.

[0052] The specific implementation of this step is the same as step 3 in Embodiment 1.

[0053] Step 4: separating the strontium niobate titanate film attached with polymethyl methacrylate PMMA from the substrate.

[0054] The specific implementation of this step is the same as step 4 in Embodiment 1.

[0055] Step 5: Obtain a high-quality self-su...

Embodiment 3

[0058] Embodiment 3: Manufacturing a deformation stress sensor with a double-sided platinum-platinum electrode structure.

[0059] Step A: growing a lanthanum strontium manganese oxide film on a strontium titanate substrate.

[0060] The specific implementation of this step is the same as step 1 in Embodiment 1.

[0061] Step B: Depositing a layer of strontium niobate-doped titanate film on the lanthanum strontium manganese oxide film.

[0062] The specific implementation of this step is the same as step 2 in Embodiment 1.

[0063] Step C: Spin-coat polymethyl methacrylate PMMA on the strontium niobate-doped titanate thin film.

[0064] The specific implementation of this step is the same as step 3 in Embodiment 1.

[0065] Step D: separating the strontium niobate titanate thin film attached with polymethyl methacrylate PMMA from the substrate.

[0066] The specific implementation of this step is the same as step 4 in Embodiment 1.

[0067] Step E: High-quality self-suppo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for manufacturing a deformation stress sensor based on niobium-doped strontium titanate resistive thin film, and mainly solves the problems that an existing deformation stress sensor is large in power consumption and cannot be bent. According to the technical scheme, the method includes by means of the pulse laser deposition technology, growing a niobium-doped strontium titanate thin film on the strontium titanate substrate with the lanthanum strontium manganese oxygen as the sacrificial layer; 2) spin-coating polymethyl methacrylate on the surface of the niobium-doped strontium titanate thin film, and removing the lanthanum strontium manganese oxide film by using a potassium iodide solution; 3, transferring the niobium-doped strontium titanate thin film toa flexible conductive substrate needed later, and soaking in acetone to remove polymethyl methacrylate; 4, adding the electrode on the surface of the niobium-doped strontium titanate thin film, so that the manufacturing of the deformation stress sensor is completed. The niobium-doped strontium titanate resistive thin film is adopted as a sensing material, the energy consumption is low, the sensitivity of the stress sensor is improved, and the bending of the sensor is realized, the requirements of the flexible electronic equipment can be met, and the method can be used for preparing a semiconductor device.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, in particular to a deformation stress sensor which can be used in the preparation of semiconductor devices. Background technique [0002] Strontium titanate is a transition metal oxide with a perovskite structure. Due to its stable structure and unique properties, strontium titanate is widely used in high-voltage capacitors, high-temperature superconducting film growth and other fields. Doping appropriate impurities, such as niobium, into the insulating intrinsic semiconductor of strontium titanate can make it into a conductive doped semiconductor. According to the Schottky contact theory, when a doped semiconductor is in contact with a metal with a suitable work function, a high-resistance depletion layer will be formed at the metal-semiconductor interface. insulation purpose. Compared with the oxygen vacancies accumulated in the body, the niobium impurity atoms are not easy to move, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/84G01L1/18
CPCG01L1/18
Inventor 陆小力王贺史泽堃王涛姚会娟张进成郝跃
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap